Electronic component and method of manufacturing same

• US 5,995,359 A
• Filed: 05/19/1997
• Issued: 11/30/1999
• Est. Priority Date: 06/18/1994
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Klee, Mareike K., Brand, Hans-Wolfgang, Jungk, Hans-Otto
• Primary Examiner(s): Kincaid, Kristine
• Assistant Examiner(s): Dinkins, Anthony
• Application Number:
  US08/859,796
• Time in Patent Office: 925 Days
• Field of Search: 361/301.1, 361/303, 361/304, 361/305, 361/320, 361/322, 361/321.1, 361/321.2, 361/321.3, 361/321.4, 361/321.5
• US Class Current: 361/305
• CPC Class Codes: H01C 1/14 Terminals or tapping points or electrodes specially adapted for resistors in general H01R; Arrangements of terminals or tapping points or electrodes on resistors
• CPC Class Codes: H01G 4/008 Selection of materials
• CPC Class Codes: H01G 4/0085 Fried electrodes
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H10N 30/06 Forming electrodes or interconnections, e.g. leads or terminals
• CPC Class Codes: H10N 30/878 the principal material being non-metallic, e.g. oxide or carbon based

Abstract

An electronic component has a substrate, electrode layers for the bottom electrode, top electrode and, optionally, one or more intermediate electrodes, and has intermediate functional layers, these electrode layers include an electroconductive oxidic compound, at least one electrode layer is composed of EuO_x, wherein 1≦x≦2, LiTi₂ O₄, LiV₂ O₄, SrVO₃, Eu_x NbO₃, Na_x WO₃, A₂ P₈ W₃₂ O₁₁₂, wherein A=K, Rb,RTl, Na_x Ta_y W_1-y O₃, Na_1-x Sr_x NbO₃, LaTiO₃ CeTiO₃, CaVO₃, La_1-x Sr_x VO₃, SrCoO₃, CaRuO₃, SrRuO₃, BaRuO₃, BaPbO₃, SrMoO₃, Sr₀.5 La₀.5 O₃, La₄ BaCu₅ O_13-x, La_2-x Sr_x CuO_4-δ, YBa₂ Cu₃ O_7-δ, Bi₂ Sr₂ CaCu₂ O_8+d, Bi₂ Sr₂ CuO_6+d, Bi₂ Sr₂ Ca₂ Cu₃ O_10+d, Tl₂ Ba₂ CaCu₂ O₈, TlBa₂ CuO_6+d, Tl₂ Ba₂ Ca₂ Cu₃ O_10+d, La₄ BaCu₆ O₁₅, Gd_1-x Sr_x VO₃, CaCrO₃, SrFeO₃, EuNbO₃, SrIrO₃, CaMoO₃, BaMoO₃, Bi₃ Ru₃ O₁₁, VO₂, CrO₂, MoO₂, WO₂, PtO₂, RuO_x, wherein 1.5≦x≦2, IrO_x, SnO_2-x, La₃ Ni₂ O₇, La₃ Ni₃ O₁₀, M₂ V₂ O_7-x, wherein M=Tm, Lu, M₂ Mo₂ O₇, wherein M=Nd,Sm,Gd, Lu₂ Ru₂ O₇, Pb₂ Ru₂ O₇, Bi₂ Ru₂ O₇, Pb₂ Os₂ O₇, Tl₂ Os₂ O₇, Pb₂ Ir₂ O₂, Tl₂ Rh₂ O_7-x, K₀.3 MoO₃, Rb₀.3 MoO₃, Tl₀.3 MoO₃ M_x V₂ O₅, wherein M=Cu,Na, Mo,₁₇ O₄₇ or Tl₂ O_3-x, or of physical mixtures and/or solid solutions of the oxidic compound or physical mixtures and/or solid solutions of the oxidic compounds to which is a 50% by weight of further compounds or metals is added. This electrode layer exhibits an improved adhesion and it does not passivate itself.

Claims

1. An electronic thin-film component comprising a substrate, a bottom electrode layer, a top electrode layer, and comprising intermediate functional layers between said electrode layers, characterized in that at least one electrode layer comprises an electroconductive oxidic compound selected from the group consisting of EuOx, wherein 1≦

x≦

2, LiTi₂ O₄, LiV₂ O₄, SrVO₃, Eu_x NbO₃, wherein 0.65≦

x≦

0.92, RbWO₃, Na_x WO₃, wherein 1≦

x≦

1, A₂ P₈ W₃₂ O₁₁₂, wherein A=K, Rb or Tl, Na_x Ta_y W_1-y O₃, wherein x=0.64 and x-y=0.18, Na_1-x Sr_x NbO₃, wherein 1≦

x≦

1, LaTiO₃ CeTiO₃, CaVO₃, La_1-x Sr_x VO₃, wherein 0.23≦

x≦

1, SrCoO₃, CaRuO₃, SrRuO₃, BaRuO₃, BaPbO₃, SrMoO₃, Sr₀.5 La₀.5 O₃, La₄ BaCu₅ O_13-x, wherein 1≦

x≦

1, La_2-x Sr_x CUO_4-δ

, Yba₂ Cu₃ O_7-δ

, wherein 1≦

0≦

1, Bi₂ Sr₂ CaCu₂ O_8+d, Bi₂ Sr₂ CuO_6+d, wherein 0≦

d≦

0.5, Bi₂ Sr₂ Ca₂ Cu₃ O_10+d, wherein 0.2≦

x≦

0.6 and 0≦

d≦

1, Tl₂ Ba₂ CaCu₂ O₈, TlBa₂ CuO_6+d, wherein 0≦

d≦

0.5, Tl₂ Ba₂ Ca₂ Cu₃ O_10+d, wherein 0≦

d≦

0.5, La₄ BaCu₆ O₁₅, Gd_1-x Sr_x VO₃, wherein 0.4≦

x≦

0.6, CaCrO₃, SrFeO₃, EuNbO₃, SrIrO₃, CaMoO₃, BaMoO₃, Bi₃ Ru₃ O₁₁, VO₂, CrO₂, MoO₂, WO₂, PtO₂, RuO_x, wherein 1.5≦

x≦

2, SnO_2-x, wherein 0≦

x≦

1, La₃ Ni₂ O₇, La₃ Ni₃ O₁₀, M₂ V₂ O_7-x, wherein M=Tm or Lu and 0≦

x≦

1, M₂ Mo₂ O₇, wherein M=Nd,Sm or Gd, Lu₂ Ru₂ O₇, Pb₂ Ru₂ O₇, Bi₂ Ru₂ O₇, Pb₂ Os₂ O₇, Tl₂ Os₂ O₇, Pb₂ Ir₂ O₂, Tl₂ Rh₂ O_7-x, wherein 0≦

x≦

1, K₀.3 MoO₃, Rb₀.3 MoO₃, Tl₀.3 MoO₃ M_x V₂ O₅, wherein M=Cu or N and 0≦

x≦

1, Na, Mo₁₇ O₄₇ and Tl₂ O_3-x, wherein 0≦

x≦

1, or of physical mixtures and/or solid solutions of said oxidic compounds or physical mixtures and/or solid solutions of said oxidic compounds to which ≦

50% by weight of further compounds or metals is added.

2. An electronic thin-film component as claimed in claim 1, characterized in that said at least one electrode layer also contains ReO₃ or RuO₂.

3. An electronic thin-film component as claimed in claim 2, characterized in that the said at least one electrode layer contains also TiO₂, SiO₂ or Al₂ O₃.

4. An electronic thin-film component as claimed in claim 2, characterized in that the said at least one electrode layer also contains SnO₂.

5. An electronic thin-film component as claimed in claim 2, characterized in that the intermediate functional layers comprise perovskites.

6. An electronic thin-film component as claimed in claim 2, characterized in that the substrate is composed of Si, GaAs, sapphire, glass, quartz, Zr)₂, MgO, Al₂ O₃ or AIN.

7. An electronic thin-film component as claimed in claim 2 wherein the metals are selected from the group consisting of platinum, palladium, iridium, silver, gold and copper and alloys thereof.

8. An electronic thin-film component as claimed in claim 1, characterized in that the said at least one electrode layer contains also TiO₂, SiO₂ or Al₂ O₃.

9. An electronic thin-film component as claimed in claim 8, characterized in that the said at least one electrode layer also contains SnO₂.

10. An electronic thin-film component as claimed in claim 8, characterized in that the intermediate functional layers comprise perovskites.

11. An electronic thin-film component as claimed in claim 8, characterized in that the substrate is composed of Si, GaAs, sapphire, glass, quartz, Zr)₂, MgO, Al₂ O₃ or AIN.

12. An electronic thin-film component as claimed in claim 8 wherein the metals are selected from the group consisting of platinum, palladium, iridium, silver, gold and copper and alloys thereof.

13. An electronic thin-film component as claimed in claim 1, characterized in that the said at least one electrode layer also contains SnO₂.

14. An electronic thin-film component as claimed in claim 13, characterized in that the intermediate functional layers comprise perovskites.

15. An electronic thin-film component as claimed in claim 13 wherein the metals are selected from the group consisting of platinum, palladium, iridium, silver, gold and copper and alloys thereof.

16. An electronic thin-film component as claimed in claim 1, characterized in that the functional intermediate layers comprise perovskites.

17. An electronic thin-film component as claimed in claim 1, characterized in that the substrate is composed of Si, GaAs, sapphire, glass, quartz, Zr)₂, MgO, Al₂ O₃ or AIN.

18. A method of manufacturing an electronic thin-film component as claimed in claim 1, in which one or more electrode layers are produced by coating a substrate or a functional intermediate layer with pure solutions, sols or suspensions comprising starting compounds for the electroconductive oxidic compounds in organic solvents, by means of a wet-chemical deposition method and a subsequent thermal treatment to form the electroconductive, oxidic compounds.

19. An electronic thin-film component as claimed in claim 1 wherein the metals are selected from the group consisting of platinum, palladium, iridium, silver, gold and copper and alloys thereof.

20. An electronic thin-film component of claim 1 wherein at least one intermediate electrode layer is provided between the top and bottom electrode layers.