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Plate line segmentation in a 1T/1C ferroelectric memory

  • US 5,995,406 A
  • Filed: 11/14/1997
  • Issued: 11/30/1999
  • Est. Priority Date: 11/14/1997
  • Status: Expired due to Term
First Claim
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1. A plate line segmentation scheme for a 1T/1C ferroelectric memory comprising:

  • a plurality of rows of 1T/1C ferroelectric memory cells;

    a plurality of word lines corresponding to each row of 1T/1C ferroelectric memory cells; and

    a plurality of plate lines corresponding to each row of 1T/1C ferroelectric memory cells, each plate line being divided into two or more plate line segments, only one of which is driven when a corresponding word line is selected.

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