Infrared light sources with semimetal electron injection

• US 5,995,529 A
• Filed: 04/10/1997
• Issued: 11/30/1999
• Est. Priority Date: 04/10/1997
• Status: Expired due to Term

• Current Assignee: Sandia Corporation (Martin Marietta Corporation)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Allerman, Andrew A., Kurtz, Steven R., Biefeld, Robert M.
• Primary Examiner(s): Davie, James W.
• Assistant Examiner(s): Stahl, Michael J.
• Application Number:
  US08/838,573
• Time in Patent Office: 964 Days
• Field of Search: 372/45, 372/46, 372/43, 257/94, 257/96, 257/97, 257/13
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01S 5/223 Buried stripe structure H01S5/227 takes precedence
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/343 in AIIIBV compounds, e.g. AlGaAs-laser , InP-based laser
• CPC Class Codes: H01S 5/34306 emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Abstract

An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 μm. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.

Claims

1. An infrared light source comprising:

(a) a semiconductor substrate; and

(b) at least one active region epitaxially grown on the semiconductor substrate, with the active region comprising a pair of adjacent semiconductor layers forming a semimetal region, and at least one quantum-well layer wherein infrared light is generated proximate to the semimetal region.

2. The infrared light source of claim 1 wherein the substrate comprises InAs.

3. The infrared light source of claim 1 wherein the semimetal region is formed by a first semiconductor layer comprising GaAsSb or GalnSb in contact with a second semiconductor layer comprising InAs_1-x Sb_x with 0≦

x≦

0.4.

4. The infrared light source of claim 1 wherein the active region further includes a first cladding layer located on one side of the active region to sandwich the quantum-well layer between the semimetal region and the cladding layer.

5. The infrared light source of claim 4 wherein the cladding layer comprises an antimony-containing semiconductor alloy selected from the group consisting of AlAsSb, AlSb and InPSb.

6. The infrared light source of claim 4 wherein the active region further includes a second cladding layer located on the side of the active region opposite the first cladding layer.

7. The infrared light source of claim 1 wherein each quantum-well layer comprises InAs_1-x Sb_x with 0≦

x≦

0.4.

8. The infrared light source of claim 1 further including electrodes above and below the active region to form an electrically-activated light-emitting diode.

9. The infrared light source of claim 8 wherein multiple active regions are stacked to form a multi-stage light-emitting diode.

10. The infrared light source of claim 8 wherein light is emitted in a direction substantially perpendicular to a cladding layer within one of the active regions.

11. The infrared light source of claim 8 wherein light is emitted in a direction substantially parallel to a cladding layer within one of the active regions.

12. The infrared light source of claim 1 further including a resonant cavity formed about the active region for generating lasing action therein.

13. The infrared light source of claim 12 further including electrodes above and below the active region to form an electrically-activated laser.

14. The infrared light source of claim 13 wherein multiple active regions are stacked to form a multi-stage electrically-activated laser.

15. The infrared light source of claim 1 wherein light is emitted at a wavelength within the range of 2-6 μ

m.

16. An infrared light source comprising a layered semiconductor active region including at least one quantum-well layer, and further including a semimetal region proximate to the quantum-well layer, the semimetal region upon activation providing electrons and holes to the quantum-well layer to generate light.

17. The infrared light source of claim 16 wherein each quantum-well layer comprises InAs_1-x Sb_x with 0≦

x≦

0.4.

18. The infrared light source of claim 16 wherein the semimetal region is formed by a junction of two dissimilar semimetal-forming semiconductor layers.

19. The infrared light source of claim 18 wherein one of the semiconductor layers comprises GaAsSb or GalnSb, and the other of the semiconductor layers comprises InAs_1-x Sb_x with 0≦

x≦

0.4.

20. The infrared light source of claim 16 wherein the layered active region is epitaxially grown upon an InAs substrate.

21. The infrared light source of claim 16 wherein the layered semiconductor active region further includes means for confining the electrons within each quantum-well layer.

22. The infrared light source of claim 21 wherein the means for confining the electrons within each quantum-well layer comprises barrier layers surrounding each quantum-well layer.

23. The infrared light source of claim 22 wherein the barrier layers comprise a semiconductor alloy selected from the group consisting of InAs, InGaAs, InAsP and InAlAs.

24. The infrared light source of claim 22 wherein the means for confining the electrons within each quantum-well layer comprises a cladding layer located on a side of the active region away from the semimetal region.

25. The infrared light source of claim 22 wherein the means for confining the electrons within each quantum-well layer comprises a pair of cladding layers sandwiched about the semimetal region and the at least one quantum-well layer.

26. The infrared light source of claim 16 further including electrodes above and below the active region to form an electrically-activated light-emitting diode.

27. The infrared light source of claim 16 further including a resonant cavity formed about the active region for generating lasing action therein.

28. The infrared light source of claim 27 further including electrodes above and below the active region to form an electrically-activated laser.

29. The infrared light source of claim 16 wherein the generated light is in a wavelength range of 2-6 μ

m.

30. A source for generating infrared light in response to an applied electrical current, comprising:

(a) a GaAsSb or GalnSb semiconductor layer in contact with an InAsSb semiconductor layer to form a semimetal region wherein electrons and holes are generated; and

(b) at least one quantum-well layer proximate to the semimetal region, wherein the electrons are recombined with holes to generate the infrared light.

31. The infrared light source of claim 30 further including means for confining the electrons within each quantum-well layer.

32. The infrared light source of claim 31 wherein the means for confining the electrons comprises barrier layers surrounding each quantum-well layer.

33. The infrared light source of claim 31 wherein the means for confining the electrons comprises a pair of cladding layers sandwiched about the semimetal region and the quantum-well layer.

34. The infrared light source of claim 30 wherein each quantum-well layer comprises InAs_1-x Sb_x with 0≦

x≦

0.4.

35. The infrared light source of claim 30 in the form of a light-emitting diode.

36. The infrared light source of claim 30 in the form of a semiconductor laser.

37. The infrared light source of claim 30 wherein the infrared light has a wavelength in the range of 2-6 μ

m.

38. An infrared light source comprising:

(a) a semiconductor substrate; and

(b) a plurality of active regions epitaxially grown on the semiconductor substrate to form a vertically stacked structure, with each active region comprising a pair of adjacent semiconductor layers forming a semimetal region, and at least one quantum-well layer proximate to the semimetal region.

39. The infrared light source of claim 38 wherein the semimetal region is formed by a first semiconductor layer comprising GaAsSb or GalnSb in contact with a second semiconductor layer comprising InAs_1-x Sb_x with 0≦

x≦

0.4.

40. The infrared light source of claim 38 wherein each active region includes a cladding layer between each pair of stacked active regions.

41. The infrared light source of claim 40 wherein the cladding layer comprises an antimony-containing semiconductor alloy selected from the group consisting of AlAsSb, AlSb and InPSb.

42. The infrared light source of claim 38 wherein each quantum-well layer comprises InAs_1-x Sb_x with 0≦

x≦

0.4.

43. The infrared light source of claim 38 further including electrodes above and below the plurality of active regions to form a light-emitting diode.

44. The infrared light source of claim 38 further including a resonant cavity formed about the active region for generating lasing action therein.

45. The infrared light source of claim 44 further including electrodes above and below the plurality of active regions to form an electrically-activated laser.

46. The infrared light source of claim 38 wherein light is emitted at a wavelength within the range of 2-6 μ

m.