Method of manufacturing surface acoustic ware modules

• US 5,996,199 A
• Filed: 07/22/1998
• Issued: 12/07/1999
• Est. Priority Date: 03/06/1995
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Ichikawa, Yo, Kawashima, Syunichiro, Adachi, Hideaki, Setsune, Kentaro
• Primary Examiner(s): Hall, Carl E.
• Application Number:
  US09/120,756
• Time in Patent Office: 503 Days
• Field of Search: 29/25.35, 310/313 R, 427/100
• US Class Current: 29/25.35
• CPC Class Codes: H03H 3/10 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/02574 of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
• CPC Class Codes: H03H 9/02921 Measures for preventing electric discharge due to pyroelectricity
• CPC Class Codes: H03H 9/1071 the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
• CPC Class Codes: H03H 9/25 Constructional features of resonators using surface acoustic waves devices for manipulating acoustic surface waves in general G10K11/36
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

A surface acoustic module is stable, and its operation frequencies can be varied with high precision. A method of manufacturing the surface acoustic module prevents the module'"'"'s electrodes from being broken during separation of a sheet of modules into individual components. The surface acoustic module includes electrodes for transmitting and receiving a surface acoustic wave, a surface acoustic wave transmitting substrate, a high resistance thin film, and a thin film for differentiating the transmission velocity of a surface acoustic wave at the high resistance thin film from that at the substrate. The method includes the steps of forming a metallic film on a sheet of the surface acoustic wave transmitting substrate, of forming the electrodes on the metallic film, and of irradiating light or the like to the metallic film so as to increase the film'"'"'s resistivity.

Claims

1. A method of manufacturing a surface acoustic wave module comprising the steps of:

forming a conductive metallic film on a sheet of a surface acoustic wave transmitting substrate;

forming electrodes for driving and receiving a surface acoustic wave on said conductive metallic film;

cutting said sheet into a plurality of surface acoustic wave modules; and

then

treating said conductive metallic film so as to increase its resistivity to at least 10³ Ω

cm.

3. The method of claim 1, wherein the conductive metallic film is 1-100 nm thick.

4. The method of claim 1, wherein the conductive metallic film is made of a metal or an alloy of metals selected from the group consisting of titanium (Ti), aluminum (Al), silicon (Si), boron (B) and lithium (Li).

5. The method of claim 1, wherein the conductive metallic film is treated with an oxidizing treatment or a nitriding treatment so as to increase its resistivity.

6. The method of claim 1, wherein the substrate is at least one piezoelectric substrate selected from the group consisting of LiTaO₃, LiNbO₃ and Li₂ B₄ O₇.

2. A method of manufacturing a surface acoustic wave module comprising the steps of:

forming electrodes for driving and receiving a surface acoustic wave on a sheet of a surface acoustic wave transmitting substrate;

forming a conductive metallic film on said electrodes for driving and receiving a surface acoustic wave;

cutting said sheet into a plurality of surface acoustic wave modules; and

then

treating said conductive metallic film so as to increase its resistivity to at least 10³ Ω

cm.

7. The method of claim 2, wherein the conductive metallic film is 1-100 nm thick.

8. The method of claim 2, wherein the conductive metallic film is made of a metal or an alloy of metals selected from the group consisting of titanium (Ti), aluminum (Al), silicon (Si), boron (B) and lithium (Li).

9. The method of claim 2, wherein the conductive metallic film is treated with an oxidizing treatment or a nitriding treatment so as to increase its resistivity.

10. The method of claim 2, wherein the substrate is at least one piezoelectric substrate selected from the group consisting of LiTaO₃, LiNbO₃ and Li₂ B₄ O₇.