Vibrating beam accelerometer and method for manufacturing the same

• US 5,996,411 A
• Filed: 11/25/1996
• Issued: 12/07/1999
• Est. Priority Date: 11/25/1996
• Status: Expired due to Term

• Current Assignee: Alliedsignal Inc.
• Original Assignee: Alliedsignal Inc.
• Inventors: Leonardson, Ronald B., Woodruff, James R.
• Primary Examiner(s): MOLLER, RICHARD ALAN
• Application Number:
  US08/756,195
• Time in Patent Office: 1,107 Days
• Field of Search: 73/514.32, 73/514.36, 73/514.29, 73/514.15, 73/514.16, 73/514.35, 73/514.37, 73/862.59, 73/DIG. 1, 73/DIG. 4, 361/280, 257/417, 438/48
• US Class Current: 73/514.29
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/097 by vibratory elements
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

An accelerometer formed from a semiconducting substrate and first and second active layers coupled to the opposite surfaces of the substrate. The substrate has a frame and a proof mass suspended from the frame by one or more flexures for rotation about an input axis in response to an applied force. The active layers each include a vibratory force transducer mechanically coupled to the proof mass for detecting a force applied to the proof mass. With this configuration, the transducers are located on either side of the substrate, which improves the differential design symmetry of the force detecting apparatus. This reduces the common mode non-linear response characteristics of the accelerometer, particularly in high dynamics applications, where high performance is required.

Claims

1. An accelerometer comprising:

a substrate comprising a semiconducting material and defining first and second opposite surfaces, the substrate having a frame and a proof mass suspended from the frame by one or more flexures;

first and second active layers of semiconducting material coupled to the first and second surfaces of the substrate, respectively, wherein the first active layer comprises a first vibratory force transducer and the second active layer comprises a second vibratory force transducer, said first and second vibratory force transducers are mechanically coupled to the proof mass and the frame for detecting a force applied to the proof mass;

an insulating layer between each active layer and the substrate to insulate the vibratory transducers from the substrate, and

a circuit coupled to the vibratory force transducers for driving and sensing the vibratory force transducer

wherein the vibratory force transducers each comprise first and second parallel beams each having a first end portion fixed to the proof mass, a second end portion fixed to the frame and a resonating portion between said first and second end portions, and first and second electrodes positioned adjacent to and laterally spaced from the first and second beams,

wherein the beams each have one or more fingers extending laterally outward from the beams, the electrodes each comprising one or more fingers projecting laterally inward toward the beams and intermeshed with the beam fingers.

2. The apparatus of claim 1 wherein the one or more flexures are substantially centered between the first and second surfaces of the substrate.

3. The apparatus of claim 1 wherein the substrate and the active layers each comprise a silicon wafer.

4. The apparatus of claim 1 wherein the insulating layers each comprise a layer of silicon oxide epitaxially grown on the first and second surfaces of the substrate.

5. The apparatus of claim 4 wherein the silicon oxide layer is about 0.1 to 10 micrometers thick.

6. The apparatus of claim 1 wherein the substrate is about 300 to 700 micrometers thick and the active layers are about 5 to 40 micrometers thick.

7. The apparatus of claim 1 wherein the substrate further comprises:

a pair of silicon wafers, said silicon wafers bonded together to form said substrate; and

wherein said insulating layers are applied to said first opposite surface of said substrate and to said second opposite surface of said substrate.

8. The apparatus of claim 2 wherein the proof mass comprises first and second sides with the one or more flexures being substantially centered between the first and second surfaces of the substrate on the first side of the proof mass, a proof mass axis of rotation extending between said one or more flexures and an effective hinge point located between said one or more flexures.

9. The apparatus of claim 8 wherein the vibratory force transducers of the first active layer is located on the first side of the proof mass along an axis perpendicular to the rotation axis and extending across the hinge point, wherein the vibratory force transducers of the second active layer is located on the first side of the proof mass along an axis perpendicular to the rotation axis and extending across the hinge point.

10. The apparatus of claim 8 wherein the vibratory force transducers are both located on the second side of the proof mass opposite the hinge point.

11. The apparatus of claim 8 wherein one of the vibratory force transducers is located on the side of the proof mass along an axis perpendicular to the rotation axis and extending across the hinge point and the other of the vibratory force transducers is located on the second side of the proof mass opposite the hinge point along said axis perpendicular to the rotation axis.

12. The apparatus of claim 1 further comprising an oscillating circuit coupled to the electrodes for electrostatically vibrating the beams in a substantially lateral direction.

13. The apparatus of claim 1 further comprising means for detecting a vibration frequency of the beam and means for determining a magnitude of a force applied to the proof mass based on the vibration frequency of the beam.

14. A method for making an accelerometer for detecting an applied force comprising:

forming insulating layers on opposite surfaces of a semiconductor wafer;

forming first and second active layers on the formed insulating layers on opposite surfaces of the semiconductor wafer;

suspending a proof mass from a stationary frame on the semiconductor wafer, the proof mass having first and second opposite surfaces;

forming a first vibratory force transducer in the first active layer;

forming a second vibratory force transducer in the second active layer, wherein forming each of the first and second vibratory force transducers further comprises forming first and second parallel beams with a first end portion fixed to the proof mass, a second end portion fixed to the frame and a resonating portion between said first and second end portions and forming one or more fingers extending laterally outward from the beams;

mechanically coupling the first vibratory force transducer to the frame and to the first opposite surface of the proof mass;

mechanically coupling the second vibratory force transducer to the frame and to the second opposite surface of the proof mass;

electrically coupling the first and second vibratory force transducers to a circuit adapted for driving and sensing the vibratory force transducer; and

forming first and second electrodes adjacent to and laterally spaced from the first and second beams, wherein the electrodes are formed with one or more fingers protecting laterally inward toward the beams and intermeshed with the beam fingers;

wherein the vibratory force transducers are each capable of detecting a force applied to the proof mass.