Apparatus and method for characterizing semiconductor wafers during processing

• US 5,996,415 A
• Filed: 04/30/1997
• Issued: 12/07/1999
• Est. Priority Date: 04/30/1997
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Sensys Instruments Corporation (KLA Corporation)
• Inventors: Khuri-Yakub, Butrus T., Pham, Hung, Stanke, Fred E., Hasan, Talat
• Primary Examiner(s): Williams, Hezron
• Assistant Examiner(s): Miller, Rose M.
• Application Number:
  US08/847,144
• Time in Patent Office: 951 Days
• Field of Search: 73/597, 73/644, 73/643, 73/DIG. 1, 374/119, 374/137, 374/117, 437/8, 437/9, 437/225
• US Class Current: 73/597
• CPC Class Codes: G01N 2291/02854 Length, thickness
• CPC Class Codes: G01N 2291/02881 Temperature
• CPC Class Codes: G01N 2291/0423 Surface waves, e.g. Rayleigh waves, Love waves
• CPC Class Codes: G01N 2291/0427 Flexural waves, plate waves, e.g. Lamb waves, tuning fork, cantilever
• CPC Class Codes: G01N 2291/044 Internal reflections (echoes), e.g. on walls or defects
• CPC Class Codes: G01N 2291/102 one emitter, one receiver
• CPC Class Codes: G01N 2291/2698 Other discrete objects, e.g. bricks
• CPC Class Codes: G01N 29/041 on the surface of the material, e.g. using Lamb, Rayleigh or shear waves
• CPC Class Codes: G01N 29/07 by measuring propagation velocity or propagation time of acoustic waves
• CPC Class Codes: G01N 29/449 Statistical methods not provided for in G01N29/4409, e.g. averaging, smoothing and interpolation
• CPC Class Codes: G01N 29/46 by spectral analysis, e.g. Fourier analysis or wavelet analysis spectral signal processing per se G06F17/14

Abstract

An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves'"'"' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined. Characterization accuracy is improved by a wafer calibration procedure wherein measurement offsets from known conditions are determined for each wafer being characterized. An apparatus and technique are disclosed for correcting for anisotropy of acoustic wave velocity due to the direction of wave propagation with respect to a preferred crystallographic axis of the wafer. An apparatus and technique are also described for measuring wafer temperature using a single transducer whose temperature is related to the temperature of the wafer and, optionally, resonator structures. For characterization steps that occur when the wafer is chucked, a chuck structure is described that reduces the likelihood of the chuck interfering with the waves in the wafer.

Claims

1. An improved apparatus for characterizing a substrate, comprising:

a plurality of pin transducers, each having a probe end configured to couple acoustic energy between the pin transducer and the substrate and a transducer end configured to convert the acoustic energy in the pin transducer to external electrical signals and vice-versa;

a first set of the pin transducers including a transmitting pin configured so that the transducer end of the transmitting pin when coupled to a signal pulse of a predetermined character, excites pin acoustic waves in the pin that the probe end of the transmitting pin couples into the substrate as substrate acoustic waves;

a second set of the pin transducers including one or more receiving pins configured so that the transducer end of a respective receiving pin produces a transmitted electrical signal representing the acoustic energy in a transmitted wave coupled from the substrate to the respective pin by that pin'"'"'s probe end in response to arrival at that probe end of the substrate acoustic waves; and

acquisition and processing modules configured to perform a characterization measurement wherein;

the acquisition module is configured to (1) receive the transmitted electrical signal during a measuring period following the signal pulse; and

(2) digitize the received transmitted signals; and

the processing module is configured to (3) digitally compute from the digitized, received transmitted signals a respective measurement set correlated to spectral frequency components of the substrate acoustic waves.

2. The apparatus of claim 1, wherein the first set and second set have a configuration that is at least one of:

(a) the first set of pin transducers includes exactly one transmitting pin and the second set of pin transducers includes exactly one receiving pin;

(b) the first set of pin transducers includes exactly one transmitting pin and the second set of pin transducers includes at least two receiving pins;

(c) the probe ends of the transmitting pins and the receiving pins are arranged diametrically with respect to the surface of the substrate;

(d) the probe ends of the transmitting pins and the receiving pins are collinear;

(e) the first set of pin transducers includes two transmitting pins and the second set of pin transducers includes two receiving pins; and

(f) at least one of the pin transducers belongs to both of the sets.

3. The apparatus of claim 2, wherein

the acquisition module is configured to excite and accept measurements from the pin transducers associated with one or more processing stations;

each processing station being capable of performing a set of process steps on a respective substrate;

a plurality of the processing stations compose a processing cluster; and

the processing module is coupled to the acquisition module to control third measurements made by the acquisition module in relation to process steps ongoing in the corresponding processing stations and to derive from the measurements a process measurement set for the respective substrate, the apparatus thereby being capable of simultaneously characterizing one or more substrates being processed in the cluster.

4. The apparatus of claim 3, wherein

the substrates are rotated among at least a subset of the processing stations within the processing cluster for completion of different processing steps;

the cluster includes a calibration station at which each of the substrates can be maintained in such a condition that calibration values of at least one substrate characteristic are known for that substrate, each of the substrates being rotated to the calibration station before the commencement of one or more of the processing steps;

the calibration station is coupled to the acquisition and processing modules, which direct the calibration station to compute a calibration measurement set corresponding to the calibration values and determine independently propagation characteristics for that substrate relating the calibration measurement set to the calibration values; and

the processing module stores propagation characteristics for each of the substrates so that data can be provided to the processing module as needed to compute process values of at least one substrate characteristic for the corresponding substrate.

5. The apparatus of claim 1, wherein the measurement set comprises quantities computed from respective phases of one or more spectral components of a frequency spectrum for the transmitted electrical signal.

6. The apparatus of claim 1, wherein the measurement set comprises quantities computed from respective times of arrival of one or more spectral components of a frequency spectrum for the transmitted electrical signal.

7. The apparatus of claim 1, wherein the measurement set comprises an inverse square velocity for one or more spectral components of a frequency spectrum for the transmitted electrical signal.

8. The apparatus of claim 1, wherein:

at least one of the receiving pins is further configured to produce an echo electrical signal; and

the acquisition module is further configured to (1) receive the echo electrical signals during a measuring period following the signal pulse; and

(2) digitize the received echo signals.

9. The apparatus of claim 8, wherein the measurement set comprises quantities computed from respective phases of one or more spectral components of frequency spectra for the transmitted and echo signals.

10. The apparatus of claim 8, wherein the measurement set comprises quantities computed from respective times of arrival of one or more spectral components of frequency spectra for the transmitted and echo signals.

11. An improved apparatus for characterizing a substrate, comprising:

a first set of one or more source transducers configured to excite acoustic waves in the substrate at corresponding excitation points;

a second set of at least two receiving transducers, each being configured to detect acoustic waves in the substrate and to produce a transmitted electrical signal representing acoustic energy in the substrate at a probe point due to the excited acoustic waves;

acquisition and processing modules configured to perform a characterization measurement, wherein the acquisition module is configured to receive the transmitted electrical signals during at least one measuring period following the excitation of the acoustic waves, and the processing module is configured to compute from the transmitted electrical signals a measurement set correlated to spectral frequency components of the acoustic waves between at least a subset of the probe points; and

the acquisition and processing modules are configured to compute at least one unknown substrate characteristic associated with at least the orientation of the substrate existing at a process time based on the measurement set computed at the process time for the at least one source transducer and the at least two receiving transducers.

12. The apparatus of claim 11, wherein the processing module includes:

(a) a setup database storing information about the at least one characteristic for a setup substrate at a setup time and the corresponding measurement set;

(b) a characteristics database representing independent in-substrate characteristics dependencies of the acoustic waves on the at least one characteristic; and

the processing module is configured to compute one set of process values of the at least one characteristic between the subset of probe points for the process time based on the corresponding measurement set and information in the databases.

13. The apparatus of claim 12, wherein the propagation database is selected from the set consisting of:

propagation data generated for the substrate being characterized; and

propagation data generated for other substrates with compositions similar to that of the substrate.

14. The apparatus of claim 12, wherein the setup time is selected from the set consisting of.

one or more times during processing when at least one of the characteristics is known;

and

one or more times preceding processing when at least one of the characteristics is known.

15. The apparatus of claim 11, wherein one other characteristic is measured, including at least one of substrate temperature;

substrate thickness;

thickness of a film on the substrate; and

state of the film.

16. An improved apparatus for characterizing a substrate, comprising:

a first set of one or more source pin transducers configured to excite acoustic waves in the substrate at corresponding excitation points;

a second set of one or more receiving pin transducers, each being configured to detect acoustic waves in the substrate and to produce a transmitted electrical signal representing acoustic energy in the substrate at a probe point due to the excited acoustic waves;

at least one of the receiving pin transducers being further configured to produce an echo electrical signal; and

acquisition and processing modules configured to perform a characterization measurement, wherein the acquisition module is configured to receive the transmitted and echo electrical signals during a measuring period following the excitation of the acoustic waves, and the processing module is configured to compute from the transmitted and echo electrical signals a measurement set correlated to spectral frequency components of the acoustic waves between at least a subset of the points.

17. The apparatus of claim 16, wherein the first set and second set have a configuration that is at least one of:

(a) the first set includes exactly one source pin transducer and the second set includes exactly one receiving pin transducer;

(b) the first set includes exactly one source pin transducer and the second set includes at least two receiving pin transducers;

(c) the source pin transducers and the receiving pin transducers are configured such that the excitation and probe points are arranged diametrically with respect to the surface of the substrate;

(d) the probe points and the excitation points are collinear;

(e) the first set includes two source pin transducers and the second set includes two receiving pin transducers; and

(f) at least one of the pin transducers belongs to both of the sets.

18. The apparatus of claim 16, wherein

the acquisition and processing modules are further configured to compute a plurality of process measurement sets by performing the characterization measurement on the substrate at a process time during semiconductor processing wherein at least one characteristic associated with the substrate is unknown;

the acquisition and processing modules are further configured to compute a plurality of setup measurement sets by performing the characterization measurements on a similar substrate at a setup time wherein the at least one characteristic is known; and

the processing module being configured to compute one set of process values of the at least one characteristic at the process time between the at least one pin transducer configured to produce an echo electrical signal and at least one other of the transducers based on the corresponding setup and process measurement sets and information representing independent in-substrate of the acoustic waves on the at least one characteristic.

19. The apparatus of claim 18, wherein the processing module includes:

(a) a setup database storing information about the at least one characteristic of a setup wafer at the setup time and a corresponding setup measurement set; and

(b) a propagation database representing independent in-substrate propagation dependencies of the acoustic waves on the at least one characteristic.

20. The apparatus of claim 19, wherein the propagation database is selected from the set consisting of:

propagation data generated for the substrate being characterized; and

propagation data generated for other substrates with compositions similar to that of the substrate.

21. The apparatus of claim 18, wherein:

the setup time is selected from the set consisting of

one or more times during processing when at least one of the characteristics is known; and

one or more times preceding processing when at least one of the characteristics is known.

22. The apparatus of claim 18, wherein the at least one characteristic being measured is at least one of:

substrate temperature;

substrate thickness;

thickness of a film on the substrate; and

state of the film.