Microlens array and method of forming same and solid-state image pickup device and method of manufacturing same

• US 5,997,756 A
• Filed: 01/19/1999
• Issued: 12/07/1999
• Est. Priority Date: 08/30/1996
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Okazaki, Yuichi, Tomiya, Yoshinori
• Primary Examiner(s): Gulakowski, Randy
• Assistant Examiner(s): Ahmed, Shamim
• Application Number:
  US09/233,666
• Time in Patent Office: 322 Days
• Field of Search: 216/26, 216/24, 216/66, 257/432
• US Class Current: 216/26
• CPC Class Codes: H01L 27/14627 Microlenses

Abstract

A resist having a three-dimensional shape of a microlens array and a material layer of the microlens array are simultaneously etched under a condition by which planar patterns transferred from the resist to the material layer are larger than planar patterns of the resist. The spacing between microlenses can be made narrower than the spacing between the planar patterns of the resist. Even when the planar shape of the microlens is an ellipse, the curvatures can be optimized in both the row and column directions by making the heights in these directions different from each other. It is possible to provide a microlens array having a small non-focusing region and a solid-state image pickup device having a high sensitivity and little smear.

Claims

1. A method of forming a microlens array, comprising the steps of:

forming a mask layer having dome-like three-dimensional shapes of microlenses of a microlens array on a material layer of said microlens array; and

simultaneously etching said mask layer and said material layer under a condition by which planar patterns transferred from said mask layer to said material layer are larger than planar patterns of said mask layers, until said microlenses start contacting each other.

3. A method according to claim 1, wherein

a resist is used as said mask layer,

a gas mixture of oxygen and CF₄ or CF₄ is used as an etching gas, and

the etching is performed by using a magnetron RIE system.

4. A method according to claim 3, wherein a flow rate of said etching gas is 10 to 100 ccm.

5. A method according to claim 3, wherein a volume mixing ratio of oxygen to CF₄ in said gas mixture is 1:

1 to 10.

6. A method according to claim 3, wherein a radio frequency power generated by said magnetron RIE system is 1.0 to 8.0 W/cm².

7. A method according to claim 3, wherein an internal pressure of an etching chamber of said magnetron RIE system is 1.3 to 13.3 Pa.

8. A method according to claim 1, wherein a planar shape of said mask layer is an ellipse.

9. A method according to claim 1, wherein said microlens array is formed to oppose a plurality of photosensitive portions of a solid-state image pickup device.

10. A method according to claim 1, wherein said microlens array is formed to oppose a plurality of display portions of a liquid crystal display device.

2. A method of forming a microlens array, comprising the steps of:

forming a mask layer having a three-dimensional shapes of a microlens array on a material layer of said microlens array; and

simultaneously etching said mask layer and said material layer under a condition by which planar patterns transferred from said mask layer to said material layer are larger than planar patterns of said mask layers, wherein,

said mask layer has dome-like portions arranged in a matrix manner, and

the etching is performed until said microlenses start contacting each other,

a resist is used as said mask layer,

a gas mixture of oxygen and CF₄ or CF₄ is used as an etching gas, and

the etching is performed by using a magnetron RIE system.

11. A method of manufacturing a solid-state image pickup device having a microlens array in which a plurality of condenser microlenses are arranged in a matrix manner in correspondence with a plurality of photosensitive portions arranged in a matrix manner, comprising the steps of:

forming a mask layer having a three-dimensional shape of said microlens array on a material layer of said microlens array; and

simultaneously etching said mask layer and said material layer under a condition by which planar patterns transferred from said mask layer to said material layer are larger than planar patterns of said mask layer, wherein,

said mask layer has dome-like portions arranged in a matrix manner at spacings in row and column directions, and

the etching is performed until said microlenses start contacting each other.