Microchamber

• US 5,997,963 A
• Filed: 05/05/1998
• Issued: 12/07/1999
• Est. Priority Date: 05/05/1998
• Status: Expired due to Term

• Current Assignee: Ultratech Incorporated (Veeco Instruments Incorporated)
• Original Assignee: Ultratech Stepper, Inc. (Veeco Instruments Incorporated)
• Inventors: Weiner, Kurt W, Davison, John E
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US09/073,057
• Time in Patent Office: 581 Days
• Field of Search: 118/722, 118/729, 118/733, 355/30, 355/53, 427/255.5, 427/582
• US Class Current: 427/582
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C23C 16/4409 characterised by sealing means
• CPC Class Codes: G03F 7/70866 of mask or workpiece
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence

Abstract

The invented apparatus is a relatively small-volumed chamber useful for processing a substrate. The apparatus includes a reference member with a substantially flat surface. The apparatus also includes a stage member with a surface that supports the substrate, and that has a gas bearing surrounding this support surface. Gas flows through the bearing are regulated to generate a seal of the substrate from ambient gases upon bringing the gas bearing close to the reference member'"'"'s flat surface. The seal generated by the gas bearing can also be used to contain process gas in proximity to the substrate. Such process gas can be introduced into and exhausted from the chamber through an inlet and outlet, respectively, defined in the reference member. The apparatus can include a window fixed in the reference member. Patterned light or a particle beam can be directed through the window to the contained substrate to cause selective reactions to occur thereon. The gas bearing allows the stage member to be moved relative to the reference member without affecting their relative spacing. Therefore, patterns formed on the substrate can be stepped and repeated without the need for significant refocusing of lithography equipment used to form a pattern on the substrate. The invention also includes a related method.

Claims

1. An apparatus for containing a process gas for use in processing a substrate, the apparatus comprising:

a reference member; and

a stage member supporting the substrate and having a gas bearing surrounding the substrate, the gas bearing opposing the reference member and sealing the substrate and process gas in a chamber defined between the reference and stage members.

2. An apparatus as claimed in claim 1, wherein the gas bearing maintains the stage and reference members in close proximity and spaced apart from one another.

3. An apparatus as claimed in claim 2, wherein the closest spacing between the reference and stage members is in a range from 5 to 10 microns.

4. An apparatus as claimed in claim 1, wherein the gas bearing maintains substantially the same relative spacing between the reference and stage members if the stage member is moved from one position to another, relative to the reference member.

5. An apparatus as claimed in claim 1, wherein the separation between the reference member'"'"'s surface and a surface of the stage member that supports the substrate, is in a range from 0.5 to 10 millimeters.

6. An apparatus as claimed in claim 1, wherein the chamber has a volume that is less than one liter.

7. An apparatus as claimed in claim 1, wherein the chamber has a volume that is less than 0.1 liter.

8. An apparatus as claimed in claim 1, wherein a surface of the reference member against which the gas bearing bears, is substantially flat.

9. An apparatus as claimed in claim 1, further comprising:

at least one pressurized gas source;

a vacuum source,

the gas bearing including a plurality of lands that define first, second and third channels, the first channel surrounding the surface used to support the substrate, the second channel surrounding the first channel, and the third channel surrounding the second channel, the first and third channels coupled to communicate with the gas source, and the second channel coupled to communicate with the vacuum source.

10. An apparatus as claimed in claim 9, wherein the lands are circular and concentric in configuration.

11. An apparatus as claimed in claim 9, wherein the stage member is held in close proximity to the reference member by suction applied by the vacuum source coupled the stage member'"'"'s second channel, and wherein contact between the stage member and reference member is prevented by pressurized gas applied by the gas source between the stage and reference members by the first and third channels.

12. An apparatus as claimed in claim 9, wherein the suction applied by the vacuum source and the pressure exerted by the gas sources, are proportioned so that the stage member loads against the reference member.

13. An apparatus as claimed in claim 9, wherein the gas bearing further includes

a first porous land situated in a first groove defined in the stage member and configured to define the first channel, the first land surrounding the surface used to support the substrate;

and

a second porous land situated in a second groove defined in the stage member and configured to define the third channel, the second land surrounding the first land, and

the second channel defined between the first and second lands.

14. An apparatus as claimed in claim 13, wherein the first and second lands are made of porous carbon.

15. An apparatus as claimed in claim 13, wherein the first and second lands are made of porous ceramic.

16. An apparatus as claimed in claim 13, wherein gaps between the lands and the reference member'"'"'s surface are on the order of 5 to 10 microns.

17. An apparatus as claimed in claim 9, wherein the gas source supplies inert gas.

18. An apparatus as claimed in claim 9, wherein the gas source supplies clean dry air.

19. An apparatus as claimed in claim 9, wherein the gas source supplies gas to the first and third channels with a pressure in a range from 40 to 80 pounds per square inch.

20. An apparatus as claimed in claim 9, wherein the vacuum source draws-suction from the second channel in a range from 40 to 80 pounds per square inch.

21. An apparatus as claimed in claim 9, further comprising:

an exhaust unit coupled in communication with the vacuum source, to dispose of gas drawn from the gas bearing.

22. An apparatus as claimed in claim 1, wherein the reference member defines an inlet communicating with the chamber, that directs process gas to the chamber.

23. An apparatus as claimed in claim 22, further comprising:

a pressurized process gas source communicatively coupled to the inlet, for supplying the process gas to the chamber via the inlet.

24. An apparatus as claimed in claim 23, further comprising:

a regulator communicatively coupled between the gas source and the inlet, for regulating the flow rate of process gas into the chamber.

25. An apparatus as claimed in claim 1, wherein the reference member defines an outlet communicating with the chamber, that allows exhaust gases derived from the process gas to leave the chamber.

26. An apparatus as claimed in claim 25, further comprising:

an exhaust unit communicatively coupled to the outlet, for drawing and disposing of the exhaust gases from the chamber.

27. An apparatus as claimed in claim 26, further comprising:

a regulator communicatively coupled between the exhaust unit and the outlet, for regulating the flow rate of exhaust gas drawn from the chamber.

28. An apparatus as claimed in claim 1, further comprising:

a window fixed to close an aperture defined in the reference member.

29. An apparatus as claimed in claim 28, further comprising:

a light source generating light; and

a lithography projection unit arranged to receive the light from the light source, and directing the light through the window to the substrate.

30. An apparatus as claimed in claim 29, wherein the light is laser light.

31. An apparatus as claimed in claim 29, further comprising:

a positioner coupled to the stage, for moving the stage member relative to the reference member so that the lithography projection unit can direct light to different areas of the substrate.

32. An apparatus as claimed in claim 28, wherein the gas bearing allows the stage member to glide along the surface of the reference member so that the window can be positioned over different areas of the substrate at a constant distance therefrom.

33. An apparatus as claimed in claim 1, wherein the gas bearing loads the stage member against the reference member.

34. An apparatus as claimed in claim 1, wherein the gas bearing allows the stage member to glide along the surface of the reference member at a substantially constant distance therefrom.

35. An apparatus as claimed in claim 1, wherein the substrate is a wafer substrate.

36. A method comprising the steps of:

a) directing a first gas flow from a first surface toward a second surface around a first ring-like channel defined in the first surface, the first channel surrounding a substrate situated on the first surface, and the first flow substantially containing a gas in proximity to the substrate;

b) suctioning a second gas flow from between the first and second surfaces around a second ring-like channel defined in the first surface, the second channel surrounding the first channel; and

c) directing a third gas flow from the first surface to the second surface around a third ring-like channel defined in the first surface, the third channel surrounding the second channel, and the third gas flow substantially preventing ambient gas from flowing by the third channel,

the second gas flow including at least a portion of the first and third gas flows.

37. A method as claimed in claim 36, further comprising the step of:

d) directing a process gas into a chamber sealed by the first, second and third gas flows and the first and second surfaces.

38. A method as claimed in claim 37, further comprising the step of:

e) regulating the pressure at which the process gas is introduced to the sealed chamber at slightly above ambient pressure.

39. A method as claimed in claim 37, further comprising the step of:

e) exhausting the process gas from the sealed chamber.

40. A method as claimed in claim 39, further comprising the step of:

e) regulating the pressure at which the process gas is exhausted from the volume at slightly below ambient pressure.

41. A method as claimed in claim 36, further comprising the steps of:

d) irradiating the substrate through a window defined in the second surface to cause the process gas to react with the substrate.

42. A method as claimed in claim 41, wherein the light is patterned to selectively to cause the process gas to react with the substrate.

43. A method as claimed in claim 41, further comprising the step of:

e) moving the first surface relative to the second surface to successive positions,

the step (d) of irradiating being performed after each successive movement in the step (e).

44. A method as claimed in claim 43, wherein the performance of said steps (a)-(c) maintains the first surface at a substantially constant distance from the second surface in the successive positions.

45. A method as claimed in claim 36, wherein the suctioning of said step (b) sufficiently balances the pressure exerted between the first and second surfaces by the first and second air flows that the first surface is loaded against the second surface.

46. A method as claimed in claim 36, wherein the performance of said steps (a)-(c) maintains the first surface at a substantially constant distance from the second surface.

47. A method as claimed in claim 36, further comprising the steps of:

d) diffusing the first flow; and

e) diffusing the second flow.

48. A method as claimed in claim 36, wherein the substrate is a wafer substrate.