Electrically programmable photolithography mask

• US 5,998,069 A
• Filed: 02/27/1997
• Issued: 12/07/1999
• Est. Priority Date: 02/27/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Pierrat, Christophe, Cutter, Douglas J.
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US09/031,939
• Time in Patent Office: 1,013 Days
• Field of Search: 430/5, 430/322, 345/43, 250/492.1, 250/492.22
• US Class Current: 430/5
• CPC Class Codes: G03F 1/26 Phase shift masks [PSM]; PSM blanks; Preparation thereof
• CPC Class Codes: G03F 1/30 Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: G03F 1/34 Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Abstract

An electronically programmed mask is connected to an electronic device, such as a processor. In operation, a mask design is first entered into the processor. The processor controls a display of an image on the electronically programmed mask, wherein the display replicates conventional type masks. The electronically programmed mask is designed such that the display presented on its screen provides optical contrast and characteristics that are easily changed or reprogrammed by the processor. Electronically controlled masks provide the same patterns as mechanical type masks without requiring rigid, permanent type structures to form a desired pattern.

Claims

1. An electronically programmable photolithography mask comprising:

a material having optical characteristics that are electronically controlled to provide a mask pattern, wherein the material has a first region allowing transmission of light from a light source and a second region allowing transmission of light, such that a phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region.

2. The electronically programmable photolithography mask of claim 1 wherein the optical characteristics of the material are reprogrammable for changing the mask pattern.

3. The electronically programmable photolithography mask of claim 2 wherein a processor electronically controls the material forming the mask pattern.

4. An electronically programmable photolithography mask comprising:

a material having optical characteristics that are electronically controlled to provide a mask pattern, wherein the material has a first region allowing transmission of light from a light source and a second region allowing a lesser percentage transmission of light than the first region, such that a phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region.

5. The electronically programmable photolithography mask of claim 4 wherein the optical characteristics of the material are reprogrammable for changing the mask pattern.

6. The electronically programmable photolithography mask of claim 5 wherein a processor electronically controls the material forming the mask pattern.

7. An electronically programmable photolithography mask comprising:

a material having optical characteristics that are electronically controlled to provide a mask pattern, wherein the material has a first region allowing transmission of light from a light source and a second region allowing transmission of light, such that a phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region, and a third region for blocking 100% of light.

8. The electronically programmable photolithography mask of claim 7 wherein the optical characteristics of the material are reprogrammable for changing the mask pattern.

9. The electronically programmable photolithography mask of claim 8 wherein a processor electronically controls the material forming the mask pattern.

10. An electronically programmable photolithography mask comprising:

a first layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region allowing transmission of light, such that a phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region; and

a second layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region that blocks 100% of light,

wherein the two layers are stacked to form a mask pattern.

11. The electronically programmable photolithography mask of claim 10 wherein a processor electronically controls the material forming the mask pattern.

12. An electronically programmable photolithography mask comprising:

a first layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region that blocks 100% of light; and

a plurality of layers, each layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region allowing transmission of light, such that a phase of light passing through the second region is out-of-phase with light passing through the first region,

wherein the layers are stacked to form a mask pattern, such that the second regions of the plurality of layers are staggered for providing an incremental increase in phase shift of light passing through the second region of each layer so that a combined phase of light passing though the second region on a bottom layer is 180 degrees out-of-phase with light passing through the first region.

13. The electronically programmable photolithography mask of claim 12 wherein a computer electronically controls the material forming the mask pattern.

14. A photolithography system comprising:

an illuminator providing a light source; and

an electrically programmable photolithography mask comprising;

a material having a plurality of electronically controlled regions for allowing a phase shift of light between a first region and a second region.

15. The photolithography system of claim 14 wherein the material having a plurality of electronically controlled regions allows transmission of light through the first region and the second region, such that the phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region.

16. The photolithography system of claim 14 wherein the material having a plurality of electronically controlled regions allows transmission of light through the first region and a lesser percentage of light through the second region, such that the phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region.

17. The photolithography system of claim 14 wherein the material having a plurality of electronically controlled regions allows transmission of light through the first region and the second region, such that the phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region, and a third region for blocking 100% of light.

18. A photolithography system comprising:

an illuminator providing a light source; and

an electrically programmable photolithography mask having

a first layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region allowing transmission of light, such that a phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region,

and a second layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region that blocks 100% of light,

wherein the two layers are stacked to form a mask pattern.

19. A photolithography system comprising:

an illuminator providing a light source; and

an electrically programmable photolithography mask having

a first layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region that blocks 100% of light; and

a plurality of layers, each layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region allowing transmission of light, such that a phase of light passing through the second region is out-of-phase with light passing through the first region,

wherein the layers are stacked to form a mask pattern, such that the second regions of the plurality of layers are staggered for providing an incremental increase in phase shift of light passing through the second region of each layer so that a combined phase of light passing though the second region on a bottom layer is 180 degrees out-of-phase with light passing through the first region.

20. A method of programming a photolithography mask, the method comprising:

drafting a mask pattern on a processor;

programming via the processor an electronically programmable mask having a plurality of electronically controlled regions for allowing a phase shift of light between a first region and a second region; and

transmitting light through the mask.

21. The method of claim 20 wherein programming allows transmission of light through the first region and the second region, such that the phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region.

22. The method of claim 20 wherein programming allows transmission of light through the first region and a lesser percentage of light through the second region, such that the phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region.

23. The method of claim 20 wherein programming allows transmission of light through the first region and the second region, such that the phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region, and a third region for blocking 100% of light.

24. A method of programming a photolithography mask, the method comprising:

drafting a mask pattern on a processor;

programming via the processor an electronically programmable mask having a first layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region allowing transmission of light, such that a phase of light passing through the second region is 180 degrees out-of-phase with light passing through the first region, and a second layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region that blocks 100% of light;

stacking the two layers to form a mask pattern; and

transmitting light through the mask.

25. A method of programming a photolithography mask, the method comprising:

drafting a mask pattern on a processor;

programming via the processor an electronically programmable mask having a first layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region that blocks 100% of light, and a plurality of layers with each layer comprising a material having optical characteristics that are electronically controlled to provide a first region allowing transmission of light from a light source and a second region allowing transmission of light, such that a phase of light passing through the second region is out-of-phase with light passing through the first region, wherein the layers are stacked such that the second regions of the plurality of layers are staggered for providing an incremental increase in phase shift of light passing through the second region of each layer so that a combined phase of light passing though the second region on a bottom layer is 180 degrees out-of-phase with light passing through the first region;

stacking the layers to form a mask pattern; and

transmitting light through the mask.