Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials

• US 5,998,235 A
• Filed: 06/26/1997
• Issued: 12/07/1999
• Est. Priority Date: 06/26/1997
• Status: Expired due to Term

• Current Assignee: Hanger Solutions, LLC (IP Investments Group LLC)
• Original Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Inventors: Mitra, Pradip
• Primary Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/882,881
• Time in Patent Office: 894 Days
• Field of Search: 257/442, 257/188, 438/95, 117/957
• US Class Current: 438/95
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/1832 comprising ternary compounds, e.g. Hg Cd Te

Abstract

A variable bandgap infrared absorbing material, Hg_1-x Cd_x Te, is manufactured by use of the process termed MOCVD-IMP (Metalorganic Chemical Vapor Deposition-Interdifffused Multilayer Process). A substantial reduction in the dislocation defect density can be achieved through this method by use of CdZnTe layers which have a zinc mole fraction selected to produce a lattice constant which is substantially similar to the lattice constant of HgTe. After the multilayer pairs of HgTe and Cd₀.944 Zn₀.056 Te are produced by epitaxial growth, the structure is annealed to interdiffuse the alternating layers to produce a homogeneous alloy of mercury cadmium zinc telluride. The mole fraction x in Hg_1-x (Cd₀.944 Zn₀.056)_x Te can be varied to produce a structure responsive to multiple wavelength bands of infrared radiation, but without changing the lattice constant. The alloy composition is varied by changing the relative thicknesses of HgTe and Cd₀.944 Zn₀.056 Te. A similar structure can also be fabricated using HgTe and lattice matched CdTe_1-y Se_y. Thus, a multi-band infrared absorbing material structure can be fabricated which has reduced dislocation defects, and thereby produce detectors with improved performance.

Claims

1. A method for fabricating a variable bandgap infrared absorbing semiconductor material structure, comprising the steps of:

forming a cadmium zinc telluride buffer layer on a substrate,

forming on said buffer-layer, by epitaxial growth, alternating layers of mercury telluride, having the same lattice constant, and layers of cadmium zinc telluride wherein said buffer layer and said cadmium zinc telluride layers have a zinc mole fraction to produce a lattice constant substantially similar to the lattice constant of said mercury telluride layers, and

annealing said structure to interdiffuse said mercury telluride layers and said cadmium zinc telluride layers to produce a homogeneous mercury cadmium zinc telluride alloy.

2. A method for fabricating a variable bandgap infrared absorbing semiconductor material structure as recited in claim 1 wherein said substrate is a cadmium telluride based substrate.

3. A method for fabricating a variable bandgap infrared absorbing semiconductor material structure as recited in claim 2 wherein said cadmium telluride based substrate includes zinc.

4. A method for fabricating a variable bandgap infrared absorbing semiconductor material structure as recited in claim 1 wherein said substrate is a cadmium telluride based substrate which includes selenium.

5. A method for fabricating a variable bandgap infrared absorbing semiconductor material structure, comprising the steps of:

forming a cadmium telluride selenide buffer layer on a substrate,

forming on said buffer layer, by epitaxial growth, alternating layers of mercury telluride, having the same lattice constant, and layers of cadmium telluride selenide wherein said buffer layer and said cadmium telluride selenide layers have a selenium mole fraction to produce a lattice constant substantially similar to the lattice constant of said mercury telluride layers, and

annealing said structure to interdiffuse said mercury telluride layers and said cadmium telluride selenide layers to produce a homogeneous mercury cadmium telluride selenide alloy.

6. A method for fabricating a variable bandgap infrared absorbing semiconductor material structure as recited in claim 5 wherein said substrate is a cadmium telluride based substrate.

7. A method for fabricating a variable bandgap infrared absorbing semiconductor material structure as recited in claim 6 wherein said cadmium telluride based substrate includes zinc.

8. A method for fabricating a variable bandgap infrared absorbing semiconductor material structure as recited in claim 5 wherein said substrate is a cadmium telluride based substrate which includes selenium.

9. A method for fabricating a variable bandgap infrared absorbing-semiconductor structure comprising:

providing a substrate; and

forming on the substrate from layers of cadmium zinc telluride and mercury telluride a homogenous alloy of the formula Hg_1-x (Cd_1-y Zn_y)_x Te wherein y represents the mole fraction of zinc, and x represents the mole fraction of the cadmium and zinc, and wherein the variance in lattice constant is less than 0.1 percent between said layers of cadmium zinc telluride and the mercury telluride for the formation of the alloy.

10. The structure of claim 9 where y=0.0056.

11. The structure of claim 9 further comprising a buffer layer of cadmium zinc telluride between said substrate and said alloy, said buffer layer having a lattice constant substantially similar to the alloy.

12. A method of fabricating a variable bandgap infrared absorbing semiconductor material structure, comprising:

(a) forming a layer of Cd_1-y Zn_y Te on a substrate, wherein y represents the mole fraction of Zn such that the lattice constant of the cadmium zinc telluride is substantially similar to the lattice constant of the mercury telluride;

(b) forming a layer of HgTe on the previously deposited layer of Cd_1-y Zn_y Te;

(c) repeating at least once, step (a);

(d) repeating step (b) after each repetition of step (c) to create a number of alternating layers of Cd_1-y Zn_y Te and HgTe;

(e) annealing said layers to form a homogeneous alloy structure.

13. The variable bandgap infrared absorbing structure of claim 12 further comprising a one or more additional layers of a homogeneous alloy of the formula Hg_1-x (Cd_1-y Zn_y)_x Te wherein y represents the mole fraction of zinc, and x represents the mole fraction of the cadmium and zinc;

wherein the value of x for the homogeneous alloy structure and each of said additional layers of homogeneous alloy are different from one another.

14. A method of fabricating a variable bandgap infrared absorbing semiconductor material structure responsive to infrared radiation, comprising:

(a) forming a buffer layer of Cd_1-y Zn_y Te on a substrate, wherein y represents the mole fraction of Zn such that the lattice constant of the cadmium zinc telluride is substantially similar to the lattice constant of the mercury telluride;

(b) forming a thin layer of HgTe on the previously deposited buffer layer;

(c) forming a thin layer of Cd_1-y Zn_y Te;

(d) repeating steps (b) and (c) a number of times to create alternating layers of Cd_1-y Zn_y Te and HgTe;

(e) annealing the layers to form a homogeneous alloy structure.

15. A method for forming a variable bandgap infrared absorbing semiconductor structure comprising:

providing a substrate; and

forming thereon a homogenous alloy of the formula (HgTe)_1-x (CdTe_1-z Se_z)_x wherein z represents the mole fraction of selenium and x represents the mole fraction of the cadmium telluride selenide.

16. A method of claim 15 further comprising one or more additional layers of a homogeneous alloy of the formula (HgTe)_1-x (CdTe_1-z Se_z)_x wherein z represents the mole fraction of selenium and x represents the mole fraction of the cadmium telluride selenide;

wherein the value of x for the homogeneous alloy structure and each additional layer of homogeneous alloy are different from one another.

17. The method of claim 16 wherein z is about 0.0516.

18. The method of claim 15 wherein z is about 0.0516.

19. A method of forming two or more lattice matched quaternary alloys of infrared absorbing semiconductor comprising:

(a) forming a first region of quaternary alloy by

(i) forming a first layer of a composition of the formula Cd_1-y Zn_y Te wherein y is the mole fraction of zinc having a first thickness and such that the lattice constant of the cadmium zinc telluride is substantially similar to the lattice constant of the mercury telluride;

(ii) forming a second layer of a composition of the formula HgTe having a second thickness;

(iii) forming one or more additional alternating layers of said first layer and said second layer;

(b) forming a second quaternary region by

(i) forming a third layer of a composition of the formula Cd_1-y Zn_y Te wherein y is the mole fraction of zinc having a thickness and such that the lattice constant of the cadmium zinc telluride is substantially similar to the lattice constant of the mercury telluride;

(ii) forming a fourth layer of a composition of the formula HgTe having a thickness;

(iii) forming one or more additional alternating layers of said third and said fourth layers; and

(c) annealing the layers to form homogeneous alloys of Hg_1-x (Cd_1-y Zn_y)_x Te.

20. A method of forming two or more lattice matched quaternary alloys of infrared absorbing semiconductor comprising:

(a) forming a first region of quaternary alloy by

(i) forming a first thin layer of a composition of the formula HgTe having a first thickness and such that the lattice constant of the cadmium zinc telluride is substantially similar to the lattice constant of the mercury telluride;

(ii) forming a second layer of a composition of the formula Cd_1-y Zn_y Te wherein y is the mole fraction of zinc having a second thickness;

(iii) forming one or more additional alternating layers of said first layer and said second layer;

(b) forming a second quaternary region by

(i) forming a third layer of a composition of the formula HgTe having a first thickness and such that the lattice constant of the cadmium zinc telluride is substantially similar to the lattice constant of the mercury telluride;

(ii) forming a fourth layer of a composition of the formula Cd_1-y Zn_y Te wherein y is the mole fraction of zinc having a thickness;

(iii) forming one or more additional alternating layers of said third and said fourth layers; and

(c) annealing the layers to form homogeneous alloys of Hg_1-x (Cd_1-y Zn_y)_x Te.

21. The method of claim 20 further comprising an initial step of forming a buffer layer of a composition such that it is lattice matched to mercury telluride.

22. The method of claim 20 wherein the thickness of the layers is selected so that when the composition is annealed the first section and second section will respond to different wavelengths.

23. The method of claim 20 wherein the value of y is the same in said first, second, third, fourth and one or more additional layers.

24. The method of claim 20 wherein the variance in lattice constant is less than 0.1 percent between the quaternary alloy and cadmium telluride selenide and mercury telluride.

25. A method of fabricating a variable bandgap infrared absorbing semiconductor material structure responsive to infrared radiation, comprising:

(a) forming a layer of CdTe_1-z Se_z on a substrate, wherein z represents the mole fraction of selenium such that the lattice constant of the cadmium selenium telluride is substantially similar to the lattice constant of the mercury telluride;

(b) forming a layer of HgTe on the previously deposited layer of CdTe_1-z Se_z ;

(c) repeating steps (a) and (b) one or more times to create alternating layers of CdTe_1-z Se_z and HgTe;

(d) annealing the resulting layers to form a homogeneous alloy structure.

26. A method of fabricating a variable bandgap infrared absorbing semiconductor material structure responsive to infrared radiation, comprising:

(a) forming a layer of HgTe on a substrate;

(b) forming a layer of CdTe_1-z Se_z wherein z represents the mole fraction of selenium on the previously deposited layer of CdTe_1-z Se_z such that the lattice constant of the cadmium selenium telluride is substantially similar to the lattice constant of the mercury telluride;

(c) repeating steps (a) and (b) one or more times to create alternating layers of CdTe_1-z Se_z and HgTe;

(d) annealing the layers to form a homogeneous alloy structure.

27. The method of claim 26 further comprising forming a buffer layer before forming said layer.

28. A method of forming two or more lattice matched quaternary alloys of infrared absorbing materials comprising:

(a) forming a first region by

(i) forming a first layer having a predetermined thickness of a composition of the formula CdTe_1-z Se_z wherein z is the mole fraction of selenium such that the lattice constant of the cadmium selenium telluride is substantially similar to the lattice constant of the mercury telluride;

(ii) forming a second layer having a thickness of a composition of the formula HgTe;

(iii) forming one or more additional alternating layers of said first layer and said second layer;

(b) forming a second region of quaternary alloy by

(i) forming a third layer having a thickness of a composition of the formula CdTe_1-z Se_z wherein z is the mole fraction of selenium such that the lattice constant of the cadmium selenium telluride is substantially similar to the lattice constant of the mercury telluride;

(ii) forming a fourth layer having a thickness of a composition of the formula HgTe having a predetermined thickness;

(iii) forming one or more additional alternating layers of said third layer and said fourth layers and

(c) annealing the layers to form homogeneous alloys of (HgTe)_1-x (CdTe_1-z Se_z)_x.

29. The method of claim 28 further comprising forming a buffer layer before forming said first region.

30. A method of forming two or more lattice matched quaternary alloys of infrared absorbing materials comprising:

(a) forming a first region by

(i) forming a first layer having a thickness of a composition of the formula HgTe;

(ii) forming a second layer having a thickness of a composition of the formula CdTe_1-z Se_z wherein z is the mole fraction of selenium such that the lattice constant of the cadmium selenium telluride is substantially similar to the lattice constant of the mercury telluride;

(iii) forming one or more additional alternating layers of said first layer and said second layer;

(b) forming a second region of quaternary alloy by

(i) forming a third layer having a thickness of a composition of the formula HgTe;

(ii) forming a fourth layer having a thickness of a composition of the formula CdTe_1-z Se_z wherein z is the mole fraction of selenium having a predetermined thickness and such that the lattice constant of the cadmium selenium telluride is substantially similar to the lattice constant of the mercury telluride;

(iii) forming one or more additional alternating layers of said third layer and said fourth layers and

(c) annealing the layers to form homogeneous alloys of (HgTe)_1-x (CdTe_1-z Se_z)_x.

31. The method of claim 30 further comprising the addition of one or more regions each when annealed is responsive to a wavelength different from the other sections.