Method for manufacturing semiconductor device and apparatus for resin-encapsulating

• US 5,998,243 A
• Filed: 10/14/1998
• Issued: 12/07/1999
• Est. Priority Date: 10/15/1997
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sugizaki, Yoshiaki, Odashima, Teikou, Nakazawa, Takahito, Matsui, Mikio
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US09/172,040
• Time in Patent Office: 419 Days
• Field of Search: 438/118, 438/124, 438/125, 438/126, 438/127
• US Class Current: 438/127
• CPC Class Codes: B29C 45/14655 connected to or mounted on a carrier, e.g. lead frame
• CPC Class Codes: B29C 45/34 having venting means
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73203 Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/83102 using surface energy, e.g. capillary forces
• CPC Class Codes: H01L 2224/83104 by applying pressure, e.g. by injection
• CPC Class Codes: H01L 2224/92125 the second connecting process involving a layer connector
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

In a method for manufacturing a flip-chip bonded semiconductor device is used an apparatus for resin-encapsulating, the apparatus which comprises a molding die consisting of a plurality of mold bodies, device for decompressing cavities of the molding die, device for heating the molding die, and device for injecting a liquid resin under pressure into the cavities, to form a resin-encapsulating layer by transfer molding. A bonded body having a semiconductor chip connected to a wiring substrate through its bumps is placed in the cavities of the molding die, the cavities are heated and decompressed, then the liquid resin is injected under pressure into the cavities through a gate to form a resin-encapsulating layer. Thus, the molding resin can be filled uniformly into the gap between the semiconductor chip and the wiring substrate in a short time to produce a flip-chip bonded semiconductor device having good performances.

Claims

1. A method for manufacturing a semiconductor device, comprising:

a step for setting a flip-chip bonded body, which has at least one semiconductor element electrically connected to a wiring substrate through bumps, in a cavity of a molding die formed of a plurality of mold bodies;

a step for enclosing and sealing the cavity except for at an exhaust vent;

a step for exhausting the cavity though the exhaust vent to have a required reduced pressure; and

a step for injecting a liquid molding resin at room temperature under pressure into the cavity of the molding die having the flip-chip bonded body therein to form a resin-encapsulating layer between the semiconductor element and the wiring substrate.

2. The method for manufacturing a semiconductor device according to claim 1, further comprising:

a step for heating the molding die before injecting the molding resin under pressure into the cavity of the molding die, and a step for decompressing the cavity of the molding die heated in the heating step.