Fabrication of semiconductor device having shallow junctions
First Claim
1. A method for fabricating a semiconductor device having shallow junctions comprising:
- providing a semiconductor substrate having source and drain regions and polysilicon gate regions;
selectively depositing silicon on the source and drain regions and on the polysilicon gate regions;
providing a dopant into the source and drain regions to form shallow junctions;
forming first insulating sidewall spacers on sidewalls of the gate regions;
forming second insulating spacers on the first insulating sidewall spacers;
implanting dopants through the silicon into the source and drain regions for providing deep junctions, and into the polysilicon gate regions; and
siliciding top surfaces of the source and drain regions and polysilicon gate regions.
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Abstract
A semiconductor device having shallow junctions is provided by providing a semiconductor substrate having source and drain regions and polysilicon gate regions; depositing selective silicon on the source and drain regions and on the polysilicon gate regions; providing dopant into the source and drain regions forming shallow junctions; forming first insulating spacers on sidewalls of the gate regions; forming second insulating sidewall spacers on the first insulating spacers; implanting dopants into the source and drain regions for providing deep junctions and into the polysilicon gate regions; and siliciding the top surfaces of the source and drain regions and polysilicon gate regions.
71 Citations
16 Claims
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1. A method for fabricating a semiconductor device having shallow junctions comprising:
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providing a semiconductor substrate having source and drain regions and polysilicon gate regions; selectively depositing silicon on the source and drain regions and on the polysilicon gate regions; providing a dopant into the source and drain regions to form shallow junctions; forming first insulating sidewall spacers on sidewalls of the gate regions; forming second insulating spacers on the first insulating sidewall spacers; implanting dopants through the silicon into the source and drain regions for providing deep junctions, and into the polysilicon gate regions; and siliciding top surfaces of the source and drain regions and polysilicon gate regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification