Use of chemical-mechanical polishing for fabricating photonic bandgap structures

• US 5,998,298 A
• Filed: 04/28/1998
• Issued: 12/07/1999
• Est. Priority Date: 04/28/1998
• Status: Expired due to Term

• Current Assignee: National Technology & Engineering Solutions Of Sandia LLC (Honeywell International Inc.)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Smith, Bradley K., Fleming, James G., Lin, Shawn-Yu, Hetherington, Dale L.
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): CHRISTIANSON, KEITH ALAN
• Application Number:
  US09/067,614
• Time in Patent Office: 588 Days
• Field of Search: 438/690, 438/691, 438/692, 438/693, 438/800, 438/959, 438/962, 257/17, 359/344
• US Class Current: 438/692
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/12176 Etching
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02B 6/132 by deposition of thin films

Abstract

A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 μm.

Claims

1. A method for fabricating a photonic bandgap structure, comprising steps for:

(a) forming a first layer of spaced elements of the photonic bandgap structure; and

(b) planarizing the first layer of spaced elements by chemical-mechanical polishing.

2. The method of claim 1 further comprising steps for:

(a) forming a second layer of spaced elements above the first layer, with the spaced elements in the second layer being arranged differently from the spaced elements in the first layer; and

(b) planarizing the second layer of spaced elements by chemical-mechanical polishing.

3. The method of claim 2 wherein the substrate comprises silicon.

4. The method of claim 1 wherein the steps for forming the first and second layers of spaced elements comprise steps for depositing and patterning each layer.

5. The method of claim 4 wherein the depositing and patterning steps comprise:

(a) depositing a first material;

(b) patterning the first material by etching to form an array of shaped openings therein; and

(c) depositing a second material to cover, at least in part, the first material and to overfill at least a majority of the shaped openings in the array.

6. The method of claim 5 wherein one of the first and second materials is used to form the spaced elements.

7. The method of claim 5 wherein the first and second materials are selected from the group consisting of polycrystalline silicon, amorphous silicon, silicon nitride, silicon dioxide and silicate glass.

8. The method of claim 5 wherein each deposition step comprises chemical vapor deposition, and each etching step comprises reactive ion etching.

9. A method for fabricating a photonic bandgap structure, comprising steps for:

(a) forming a plurality of stacked layers of spaced elements of the photonic bandgap structure; and

(b) planarizing each layer of spaced elements in the plurality of stacked layers by chemical-mechanical polishing after formation of that layer.

10. The method of claim 9 wherein the plurality of stacked layers of spaced elements are formed on a substrate.

11. The method of claim 10 wherein the substrate comprises silicon.

12. The method of claim 10 wherein the step for forming the plurality of stacked layers of spaced elements comprises steps for depositing and patterning each layer in the plurality of stacked layers.

13. The method of claim 12 wherein the depositing and patterning steps comprise:

(a) depositing a first material over the substrate;

(b) patterning the first material by etching to form an array of shaped openings therein; and

(c) depositing a second material to cover, at least in part, the first material and to overfill at least a majority of the shaped openings in the array.

14. The method of claim 13 wherein one of the first and second materials is used to form the spaced elements.

15. The method of claim 13 further comprising a step for rotating the array of shaped openings in each succeeding layer of the plurality of stacked layers at an angle to the array of shaped openings in the underlying layer.

16. The method of claim 15 wherein the angle is substantially equal to 90 degrees.

17. The method of claim 15 further comprising a step for laterally offsetting the array of shaped openings in every other layer by substantially one-half of a spacing between adjacent shaped openings in the array.

18. The method of claim 13 wherein the first and second materials are selected from the group consisting of polycrystalline silicon, amorphous silicon, silicon nitride, silicon dioxide and silicate glass.

19. The method of claim 13 wherein each deposition step comprises chemical vapor deposition.

20. The method of claim 13 wherein the patterning step further comprises a step for photolithographic masking prior to etching.

21. The method of claim 13 wherein the etching comprises reactive ion etching.

22. The method of claim 13 wherein the planarization step comprises chemically-mechanically polishing the second material down at least to the underlying first material.

23. The method of claim 13 wherein one of the first and second materials is used to form the spaced elements, and further comprising a step for removing, at least in part, the other of the first and second materials by selective etching.

24. The method of claim 23 wherein the spaced elements are vertically interconnected for support.

25. The method of claim 13 further comprising a step for annealing the deposited first and second materials for reducing stress therein.

26. The method of claim 13 further comprising a step for depositing a third material to overfill a minority of the shaped openings not overfilled by the second material, the third material having an index of refraction different from the index of refraction of the second material.

27. The method of claim 13 wherein the shaped openings have substantially vertical sidewalls.

28. The method of claim 13 wherein the shaped openings are elongate.

29. The method of claim 13 wherein the shaped openings have substantially equal lateral dimensions.

30. A method for fabricating a photonic bandgap structure on a substrate, comprising steps for:

(a) depositing a layer of a first material and patterning the layer to provide an array of shaped openings therein extending downward through the layer;

(b) depositing a second material to overfill at least a majority of the shaped openings in the array;

(c) planarizing the second material by chemical-mechanical polishing and thereby removing the second material at least down to the underlying first material; and

(d) repeating the sequence of steps (a)-(c) a plurality of times to build up the photonic bandgap structure.

31. The method of claim 30 wherein the step of repeating the sequence of steps (a)-(c) further comprises a step for offsetting or rotating the array of shaped openings in each successive layer of the first material.

32. The method of claim 31 wherein the step for offsetting or rotating the array of shaped openings comprises laterally offsetting the array of shaped openings by a distance substantially equal to one-half of a spacing between adjacent shaped openings in the array.

33. The method of claim 31 wherein the step for offsetting or rotating the array of shaped openings comprises rotating the array of shaped openings at an angle to the shaped openings formed in an underlying layer of the photonic bandgap structure.

34. The method of claim 33 wherein the angle is substantially equal to 90 degrees.

35. The method of claim 30 wherein the substrate comprises silicon.

36. The method of claim 30 wherein the first and second materials are selected from the group consisting of polycrystalline silicon, amorphous silicon, silicon nitride, silicon dioxide and silicate glass.

37. The method of claim 30 wherein each deposition step comprises chemical vapor deposition.

38. The method of claim 30 wherein the patterning step comprises steps for photolithographic masking and etching.

39. The method of claim 38 wherein the etching comprises reactive ion etching.

40. The method of claim 30 further comprising a step for annealing the first and second materials for reducing stress therein.

41. The method of claim 30 wherein one of the first or second materials forms a plurality of spaced elements of the photonic bandgap structure.

42. The method of claim 41 further comprising a step for removing by selective etching the other of the first or second materials not forming the spaced elements of the photonic bandgap structure.

43. The method of claim 42 wherein the spaced elements of the photonic bandgap structure remaining after the selective etching step are interconnected for support.

44. The method of claim 30 further comprising a step for depositing a third material to overfill a minority of the shaped openings not overfilled by the second material, the third material having an index of refraction different from the index of refraction of the second material.

45. The method of claim 30 wherein the shaped openings have substantially vertical sidewalls.

46. The method of claim 30 wherein the shaped openings are elongate.

47. The method of claim 30 wherein the shaped openings have substantially equal lateral dimensions.