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Protection structures for the suppression of plasma damage

  • US 5,998,299 A
  • Filed: 12/09/1997
  • Issued: 12/07/1999
  • Est. Priority Date: 12/09/1996
  • Status: Expired due to Term
First Claim
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1. A method for suppressing plasma damage to devices during an etch process comprising the steps of:

  • depositing a conductive layer;

    forming a pattern over said conductive layer, said pattern including a portion having a plurality of lines spaced a distance on the order of a minimum design rule;

    etching said conductive layer using said pattern, wherein a temporary connection is maintained in said conductive layer during the etch at a location below said portion of said pattern in order to dissipate charge, and wherein said temporary connection is automatically disconnected as material from said conductive layer is cleared between said plurality of lines.

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