Semiconductor device making method

• US 5,998,303 A
• Filed: 03/18/1997
• Issued: 12/07/1999
• Est. Priority Date: 03/19/1996
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Sato, Junichi
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Hack, Jonathan
• Application Number:
  US08/819,727
• Time in Patent Office: 994 Days
• Field of Search: 438/758, 438/784, 438/102, 438/143, 438/623, 438/789, 438/740, 438/774
• US Class Current: 438/758
• CPC Class Codes: H01L 21/02131 the material being halogen doped silicon oxides, e.g. FSG
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02277 the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
• CPC Class Codes: H01L 21/31629 Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing

Abstract

A method for making a semiconductor device includes:

a step for preparing a substrate;

a step for forming a wiring layer on the substrate;

a step for loading the substrate onto a substrate supporting unit in a reaction chamber;

a step for supplying a material gas essentially consisting of a silane gas, an oxidizing gas and a chalcogen fluoride gas into the reaction chamber; and

a step for forming a silicon oxide insulating film containing fluorine on the substrate by a plasma CVD process.

Claims

1. A method for making a semiconductor device comprising:

a step of preparing a substrate;

a step of forming a wiring layer on said substrate;

a step for loading said substrate into a substrate supporting unit in a reaction chamber;

a step for supplying a material gas essentially consisting of a silane gas, an oxidizing gas and a gas consisting of at least one gas selected from the group consisting of OF₂, S₂ F₂, SF₂, SF₄, S₂ F₁₀, SeF₄ and TeF₄ into the reaction chamber; and

a step for forming a silicon dioxide insulating film containing fluorine on said substrate by a CVD process.

2. A method for making a semiconductor device according to claim 1, wherein said silane gas is at least one gas selected from inorganic silane gases and organic silane gases.

3. A method for making a semiconductor device according to claim 1, wherein said method further comprises a step for applying ultrasonic vibration to said substrate by means of an ultrasonic vibrating means provided on said substrate supporting unit.

4. A method for making a semiconductor device according to claim 1, wherein said method further comprises a step for applying ultrasonic vibration to said substrate and said material gas by means of an ultrasonic vibrating means provided on the inner wall of said reaction chamber.

5. A method for making a semiconductor device according to claim 1, wherein said method further comprises a step for applying ultrasonic vibration to said substrate and said material gas by means of an ultrasonic vibrating means provided on a material gas supplying means for supplying said material gas to said reaction chamber.

6. A method for making a semiconductor device comprising:

a step of preparing a substrate;

a step for loading said substrate into a substrate supporting unit in a reaction chamber;

a step for supplying a material gas essentially consisting of a silane gas, an oxidizing gas and a gas consisting of at least one gas selected from the group consisting of OF₂, S₂ F₂, SF₂, SF₄, S₂ F₁₀, SeF₄ and TeF₄ into said reaction chamber;

a step for forming a silicon dioxide insulating film containing fluorine on said substrate by a CVD process; and

a step of forming a wiring layer on said silicon dioxide insulating film.

7. A method for making a semiconductor device according to claim 6, wherein said silane gas consists of at least one gas selected from inorganic silane gases and organic silane gases.

8. A method for making a semiconductor device according to claim 6, wherein said method further comprises a step for applying ultrasonic vibration to said substrate by means of an ultrasonic vibrating means provided on said substrate supporting unit.

9. A method for making a semiconductor device according to claim 6, wherein said method further comprises a step for applying ultrasonic vibration to said substrate and said material gas by means of an ultrasonic vibrating means provided on the inner wall of said reaction chamber.

10. A method for making a semiconductor device according to claim 6, wherein said method further comprises a step for applying ultrasonic vibration to said substrate by means of an ultrasonic vibrating means provided on a material gas supplying means for supplying said material gas to said reaction chamber.

11. A method for making a semiconductor device comprising:

a step of preparing a substrate;

a step for loading said substrate into a substrate supporting unit in a reaction chamber;

a step for supplying a material gas essentially consisting of a silane gas, an oxidizing gas and a gas consisting of at least one gas selected from the group consisting of OF₂, S₂ F₂, SF₂, SF₄, S₂ F₁₀, SeF₄ and TeF₄ into said reaction chamber;

a step for forming a silicon dioxide insulating film containing fluorine on said substrate by a CVD process;

a step of forming a groove on said silicon oxide insulting film; and

a step of forming a wiring layer in said groove.

12. A method for making a semiconductor device according to claim 11, wherein said silane gas consists of at least one gas selected from inorganic silane gases and organic silane gases.

13. A method for making a semiconductor device according to claim 11, wherein said method further comprises a step for applying ultrasonic vibration to said substrate by means of an ultrasonic vibrating means provided on said substrate supporting unit.

14. A method for making a semiconductor device according to claim 11, wherein said method further comprises a step for applying ultrasonic vibration to said substrate and said material gas by means of an ultrasonic vibrating means provided on the inner wall of said reaction chamber.

15. A method for making a semiconductor device according to claim 11, wherein said method further comprises a step for applying ultrasonic vibration to said substrate and said material gas by means of an ultrasonic vibrating means provided on a material gas supplying means for supplying said material gas to said reaction chamber.