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Power semiconductor devices having improved high frequency switching and breakdown characteristics

  • US 5,998,833 A
  • Filed: 10/26/1998
  • Issued: 12/07/1999
  • Est. Priority Date: 10/26/1998
  • Status: Expired due to Term
First Claim
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1. A UMOSFET, comprising:

  • a semiconductor substrate;

    a first trench in said substrate;

    an insulated gate electrode in said first trench; and

    a source electrode in said first trench, extending between said insulated gate electrode and a bottom of said first trench.

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