Thin film transistor
First Claim
1. A thin film transistor comprising:
- an insulator substrate;
a semiconductor layer formed on said insulator substrate in an island shape;
a gate insulating film covering said semiconductor layer; and
a gate electrode disposed over said gate insulating film;
said gate insulating film at least beneath said gate electrode being larger in thickness at a central region of said semiconductor layer than at opposite end regions of said semiconductor layer in a direction perpendicular to a source-drain direction.
2 Assignments
0 Petitions
Accused Products
Abstract
In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.
-
Citations
12 Claims
-
1. A thin film transistor comprising:
-
an insulator substrate; a semiconductor layer formed on said insulator substrate in an island shape; a gate insulating film covering said semiconductor layer; and a gate electrode disposed over said gate insulating film; said gate insulating film at least beneath said gate electrode being larger in thickness at a central region of said semiconductor layer than at opposite end regions of said semiconductor layer in a direction perpendicular to a source-drain direction. - View Dependent Claims (4, 5)
-
-
2. A thin film transistor comprising:
-
an insulator substrate; a semiconductor layer formed on said insulator substrate in an island shape; a gate insulating film covering said semiconductor layer; and a gate electrode disposed over said gate insulating film; said gate insulating film being composed of a first gate insulating film layer, which is formed on the island of said semiconductor layer in an island shape analogous to the first-named island shape in such a manner that said first insulating film layer and said semiconductor layer jointly formed a composite stepped island, and a second gate insulating film layer covering said composite stepped island, said first and second insulating film layers having different thicknesses d1, d2 which satisfy the following relation
space="preserve" listing-type="equation">d.sub.1 <
d.sub.2.3. - View Dependent Claims (3, 10, 11)
-
10. A thin film transistor according to claim 2, wherein said gate insulating film is a laminate composed of two or more kinds of layers of different material, and said material of one layer of said laminate defining an interface with said semiconductor layer is lower in permittivity than said material of the remaining at least one layer of said laminate.
-
11. A thin film transistor according to claim 3, wherein said gate insulating film is a laminate composed of two or more kinds of layers of different materials, and said material of one layer of said laminate defining an interface with said semiconductor layer is lower in permittivity than said material of the remaining at least one layer of said laminate.
-
-
6. A thin film transistor comprising:
-
an insulator substrate; a silicon active layer formed on said insulator substrate in an island shape; a gate insulating film covering said silicon active layer; and a gate electrode disposed over said gate insulating film; said gate insulating film being a silicon dioxide film containing at least two kinds of inert gas atoms different in mass number, said inert gas atoms smaller in mass number being contained in and near a first interface between said silicon dioxide silicon film and said silicon active layer, said inert gas atoms larger in mass number being contained in and near a second interface between said silicon dioxide film and said gate electrode. - View Dependent Claims (7, 8, 9, 12)
-
Specification