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Thin film transistor

  • US 5,998,838 A
  • Filed: 03/03/1998
  • Issued: 12/07/1999
  • Est. Priority Date: 03/03/1997
  • Status: Expired due to Term
First Claim
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1. A thin film transistor comprising:

  • an insulator substrate;

    a semiconductor layer formed on said insulator substrate in an island shape;

    a gate insulating film covering said semiconductor layer; and

    a gate electrode disposed over said gate insulating film;

    said gate insulating film at least beneath said gate electrode being larger in thickness at a central region of said semiconductor layer than at opposite end regions of said semiconductor layer in a direction perpendicular to a source-drain direction.

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