Thin film transistor

• US 5,998,838 A
• Filed: 03/03/1998
• Issued: 12/07/1999
• Est. Priority Date: 03/03/1997
• Status: Expired due to Term

• Current Assignee: Gold Charm Limited (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: NEC Corporation
• Inventors: Sato, Yoshinobu, Tanabe, Hiroshi, Okumura, Hiroshi, Yuda, Katsuhisa
• Primary Examiner(s): Ngo, Ngan V.
• Application Number:
  US09/033,609
• Time in Patent Office: 644 Days
• Field of Search: 257/57, 257/67, 257/347, 257/350, 257/352, 257/353, 257/354, 257/412, 257/638
• US Class Current: 257/347
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78609 for preventing leakage current H01L29/78618 takes precedence

Abstract

In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.

Claims

1. A thin film transistor comprising:

an insulator substrate;

a semiconductor layer formed on said insulator substrate in an island shape;

a gate insulating film covering said semiconductor layer; and

a gate electrode disposed over said gate insulating film;

said gate insulating film at least beneath said gate electrode being larger in thickness at a central region of said semiconductor layer than at opposite end regions of said semiconductor layer in a direction perpendicular to a source-drain direction.

4. A thin film transistor according to claim 1, wherein said gate insulating film is a laminate composed of two or more kinds of layers of different materials, and said material of one layer of said laminate defining an interface with said semiconductor layer is lower in permittivity than said material of the remaining at least one layer of said laminate.

5. A thin film transistor according to claim 4, wherein said material of said first insulating film layer is silicone oxide, and at least one of said materials of the remaining layers of said laminate is silicone nitride.

2. A thin film transistor comprising:

an insulator substrate;

a semiconductor layer formed on said insulator substrate in an island shape;

a gate insulating film covering said semiconductor layer; and

a gate electrode disposed over said gate insulating film;

said gate insulating film being composed of a first gate insulating film layer, which is formed on the island of said semiconductor layer in an island shape analogous to the first-named island shape in such a manner that said first insulating film layer and said semiconductor layer jointly formed a composite stepped island, and a second gate insulating film layer covering said composite stepped island, said first and second insulating film layers having different thicknesses d₁, d₂ which satisfy the following relation

space="preserve" listing-type="equation">d.sub.1 <

d.sub.2.

3.

3. A thin film transistor according to claim 2, wherein said thicknesses d₁, d₂ of said first and second insulating film layers and a thickness d_s1 of said semiconductor layer satisfy the following relation

10. A thin film transistor according to claim 2, wherein said gate insulating film is a laminate composed of two or more kinds of layers of different material, and said material of one layer of said laminate defining an interface with said semiconductor layer is lower in permittivity than said material of the remaining at least one layer of said laminate.

11. A thin film transistor according to claim 3, wherein said gate insulating film is a laminate composed of two or more kinds of layers of different materials, and said material of one layer of said laminate defining an interface with said semiconductor layer is lower in permittivity than said material of the remaining at least one layer of said laminate.

6. A thin film transistor comprising:

an insulator substrate;

a silicon active layer formed on said insulator substrate in an island shape;

a gate insulating film covering said silicon active layer; and

a gate electrode disposed over said gate insulating film;

said gate insulating film being a silicon dioxide film containing at least two kinds of inert gas atoms different in mass number, said inert gas atoms smaller in mass number being contained in and near a first interface between said silicon dioxide silicon film and said silicon active layer, said inert gas atoms larger in mass number being contained in and near a second interface between said silicon dioxide film and said gate electrode.

7. A thin film transistor according to claim 6, wherein said silicon dioxide film is a laminate composed of two or more layers, at least one of said layers contiguous to said silicon active layer containing said active gas atoms smallest in mass number, at least one of the remaining layers contiguous to said gate electrode containing said inert gas atoms larger in mass number than said inert gas atoms smallest in mass number.

8. A thin film transistor according to claim 6, wherein said inert gas atoms smallest in mass number are contained in and near said first interface between said silicon dioxide film and said silicon active layer, and said active gas atoms larger in mass number than those smallest in mass number are contained in said silicon dioxide film in varying concentration continuously increasing from said first interface with said silicon active layer toward said second interface with said gate electrode.

9. A thin film transistor according to claim 7, wherein said inert gas atoms smallest in mass number are helium, and said inert gas atoms larger in mass number than helium are argon.

12. A thin film transistor according to claim 8, wherein said inert gas atoms smallest in mass number are helium, and said inert gas atoms larger in mass number than helium are argon.