Ferroelectric storage device
First Claim
1. A ferroelectric storage device comprising:
- word lines;
bit lines;
ferroelectric capacitors;
transistors switching said bit lines and one of the electrodes of said ferroelectric capacitors selectively to a connected state and disconnected state; and
a potential generating means for supplying 2n (n is an integer not less than "2") number of different types of potentials to said bit lines according to input data at the time of writing data.
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Abstract
A ferroelectric storage device enabling an increase of capacity without a major increase in the chip size by use of multi-level data. At the time of a write operation, one of four types of potential based on the 2 bits of data input to the I/O terminal is selectively supplied from a potential generator to a bit line through a data line. The potential is supplied to one of the electrodes of a ferroelectric capacitor where one of four types of residual polarization states is selectively produced at the ferroelectric. By this, 4-level data is stored in a single memory cell. At the time of a read operation, the potential of the bit line is compared with three reference potentials at an output data generator to discriminate the stored data.
29 Citations
11 Claims
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1. A ferroelectric storage device comprising:
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word lines; bit lines; ferroelectric capacitors; transistors switching said bit lines and one of the electrodes of said ferroelectric capacitors selectively to a connected state and disconnected state; and a potential generating means for supplying 2n (n is an integer not less than "2") number of different types of potentials to said bit lines according to input data at the time of writing data. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A ferroelectric storage device comprising:
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word lines; bit lines; ferroelectric capacitors; transistors switching said bit lines and one of the electrodes of said ferroelectric capacitors selectively to a connected state and disconnected state; a potential generating means for supplying 2n (n is an integer not less than "2") number of different types of potentials to said bit lines according to input data at the time of writing data; and a discrimination means for comparing potentials generated at said bit lines with (2n -1) number of different types of reference potentials to discriminate the stored data. - View Dependent Claims (9, 10, 11)
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Specification