Method, apparatus and system for voltage screening of integrated circuits

• US 5,999,466 A
• Filed: 01/13/1998
• Issued: 12/07/1999
• Est. Priority Date: 01/13/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Gans, Dean, Marr, Ken W.
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): PHUNG, ANH K
• Application Number:
  US09/006,320
• Time in Patent Office: 693 Days
• Field of Search: 365/201, 365/226, 365/200
• US Class Current: 365/201
• CPC Class Codes: G11C 11/41 forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
• CPC Class Codes: G11C 2029/5004 Voltage
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 29/50 Marginal testing, e.g. race, voltage or current testing

Abstract

A method, apparatus and system for cost-effectively quantifying the likelihood of operational reliability problems includes a supply voltage configuration circuit and a test mode generation circuit. The test mode generation circuit and supply voltage configuration circuit, operating together in a test mode, provide selected supply voltages to selected circuit blocks of an integrated circuit. In non-test operation, the test mode generation circuit and the supply voltage configuration circuit are transparent to the operation of the tested integrated circuit.

Claims

1. A method of testing an integrated circuit having a first circuit block and a second circuit block, the first circuit block having at least one specified supply voltage for operation, and the second circuit block having at least one specified supply voltage for operation, the method comprising:

selecting first and second supply voltages, at least one of which diverges from and is selected substantially independently of one of the specified supply voltages associated with the integrated circuit;

applying the first supply voltage to the first circuit block and the second supply voltage to the second circuit block, so that at least one of the first and second circuit blocks is provided with other than its specified supply voltage;

exercising the integrated circuit according to a selected screening test, the screening test having predetermined screening criteria indicating the quality of the results; and

,

comparing the observed results of exercising the circuit to the predetermined criteria so as to enable determination of certain reliability characteristics for the circuit.

2. A method as claimed in claim 1, wherein the voltage selecting step comprises selecting first and second supply voltages that diverge from each of the specified supply voltages.

3. A method as claimed in claim 2, wherein the voltage selecting step comprises selecting first and second supply voltages that diverge from each other, these voltages being selected substantially independently of one another.

4. A method as claimed in claim 1, wherein the voltage selecting and applying steps comprise providing at least one of the first and second circuit blocks with a respective supply voltage that is less than the block'"'"'s specified supply voltage.

5. A method as claimed in claim 1, further comprising selecting and applying the first and second supply voltages responsive to the predetermined screening criteria.

6. A method as claimed in claim 1, wherein the voltage selecting step comprises providing at least one of the first and second supply voltages via an external pin of the integrated circuit in packaged form.

7. A method as claimed in claim 1, wherein the applying step comprises selecting plural nodes associated with at least one of the first and second circuit blocks and applying to the plural nodes, on a one-to-one basis, the respective selected supply voltage in combination with at least one of the other selected supply voltage and a specified supply voltage.

8. A method as claimed in claim 7, the applying step comprises using a supply voltage configuration circuit to apply at least one of the first and second supply voltages, the supply voltage configuration circuit providing for omission of application of at least one of the specified supply voltages.

9. A method as claimed in claim 7, wherein the selecting and applying steps comprise applying to at least one of the first and second circuit blocks, at respective nodes, both the first and the second supply voltages, each such supply voltage being selected substantially independently of the other and diverging from the specified supply voltage respectively associated with said circuit block, the divergence being at least one of (i) both higher, (ii) both lower, and (iii) one higher and one lower.

10. A method as claimed in claim 1, wherein the comparing step comprises comparing the results of the exercising step to results of a previously completed exercising step.

11. A method as claimed in claim 1, further comprising using a semiconductor memory device as the integrated circuit, the semiconductor device having a memory array and peripheral circuitry, the first block comprising the memory array, and the second block comprising the peripheral circuitry.

12. A method as claimed in claim 11, wherein the applying step comprises providing the memory array with a selected first supply voltage that is other than the specified supply voltage of the memory array, the first supply voltage being applied to at least one voltage supply node associated with the memory array, the voltage supply node being coupled to at least one of (i) a memory cell load device, (ii) a memory cell pull-down device, (iii) a bit line load device, (iv) wordline driver pull-up device, and (v) a wordline driver pull-down device.

13. A method as claimed in claim 12, wherein the selecting step comprises selecting at least one additional supply voltage that diverges from the specified supply voltage of the memory array, and wherein the applying step comprises selecting plural nodes associated with the memory array and applying to the plural nodes, on a one-to-one basis, a selected combination of the first supply voltage with at least one of the additional and specified supply voltages.

14. A method as claimed in claim 1, further comprising using a semiconductor memory device as the integrated circuit, the semiconductor memory device having a memory array, and the first and second blocks comprising separate portions of the memory array.

15. A method as claimed in claim 14, wherein the applying step comprises providing the selected first and second supply voltages to respective to at least one voltage supply node of the memory array, each of the voltage supply nodes being coupled to respective at least one (i) memory cell load device, (ii) memory cell pull-down device, (iii) bit line load device, (iv) wordline driver pull-up device and (v) a wordline driver pull-down device.

16. A method of field testing an integrated circuit, the integrated circuit being incorporated in a system and having a first circuit block and a second circuit block, the first circuit block having at least one specified supply voltage for operation, and the second circuit block having at least one specified supply voltage for operation, the method comprising:

selecting first and second supply voltages, at least one of which diverges from and is selected substantially independently of one of the specified supply voltages associated with the integrated circuit;

applying the first supply voltage to the first circuit block and the second supply voltage to the second circuit block, so that at least one of the first and second circuit blocks is provided with other than its specified supply voltage;

exercising the integrated circuit according to a selected screening test, the screening test having predetermined screening criteria indicating the quality of the results;

comparing the observed results of exercising the integrated circuit to the predetermined criteria so as to enable determination of certain reliability characteristics for the circuit; and

initiating, in response to a result indicating reliability issues, responsive procedures.

17. A method as claimed in claim 16, wherein the responsive procedures comprise at least one of (i) communicating a message indicating the need for servicing of the product respecting the integrated circuit, (ii) applying one or more sustaining supply voltages directed to sustaining proper operation of the integrated circuit and (iii) bypassing, substituting for or correcting each circuit block or portion thereof implicated by the reliability issue.

18. A method as claimed in claim 16, wherein the step of applying sustaining supply voltages comprises generating at least one sustaining supply voltage from within the integrated circuit under field test.

19. A method as claimed in claim 16, wherein the selecting and applying steps comprise providing at least one of the first and second circuit blocks with a respective supply voltage that is less than the block'"'"'s specified supply voltage.

20. A method as claimed in claim 16, further comprising selecting and applying the first and second supply voltages responsive to the predetermined screening criteria.

21. A method of testing a semiconductor memory device, the semiconductor memory device having a memory array and peripheral circuitry, the memory array having at least one specified supply voltage and the peripheral circuitry having at least one specified supply voltage, each specified supply voltage being associated with at least one voltage supply node of the respective memory array and peripheral circuitry, the method comprising:

selecting a first supply voltage that is lower than the specified supply voltage associated with at least one voltage supply node of the semiconductor memory device;

applying the first supply voltage to said at least one voltage supply node;

exercising the memory array according to a selected screening test, the screening test having predetermined screening criteria indicating the quality of the results;

observing the results of exercising the memory array; and

comparing the observed results to the predetermined criteria so as to enable determination of certain reliability characteristics for the semiconductor memory device.

22. A method as claimed in claim 21, further comprising selecting a second supply voltage substantially independently of the first supply voltage, the second supply voltage diverging from the specified supply voltage associated with at least one voltage supply node of the semiconductor memory device, and applying the second supply voltage to said at least one voltage supply node, said application being in respect of such voltage supply nodes other than nodes to which the first supply voltage is applied.

23. A method as claimed in claim 22, further comprising:

applying the first and second supply voltages to respective at least one supply nodes of the memory array;

selecting a third supply voltage, the third supply voltage diverging from the specified supply voltage associated with one of more voltage supply nodes of the peripheral circuitry; and

applying the third supply voltage to said at least one nodes of the peripheral circuitry.

24. A method as claimed in claim 23, further comprising applying one or more specified supply voltages to respective voltage supply nodes with which the one or more specified supply voltages are associated, each such respective voltage supply node being part of at least one of the memory array and the peripheral circuitry.

25. A method as claimed in claim 23, wherein applying the first and second supply voltages comprises applying said votages supplies to voltage supply nodes that are coupled to at least one of (i) a memory cell load device, (ii) a memory cell pull-down device, (iii) a bit line load device, (iv) wordline driver pull-up device, and (v) a wordline driver pull-down device.

26. An integrated circuit, the circuit supporting a screening mode and an operating mode, the circuit comprising:

a first circuit block, the first circuit block having at least one specified supply voltage associated with the operating mode;

a supply voltage configuration circuit coupled to the first circuit block so as to enable, in screening mode, selective provision to the first circuit block of at least one selected supply voltage that diverges from and is substantially independent of at least one of the specified supply voltages of the first circuit block.

27. An integrated circuit as claimed in claim 26, wherein the supply voltage configuration circuit comprises a voltage supply multiplexer.

28. An integrated circuit as claimed in claim 27, wherein the voltage supply multiplexer comprises at least one input terminal, the input terminals being coupled to respective voltage sources.

29. An integrated circuit as claimed in claim 28, wherein at least one of the respective voltage sources provides a specified supply voltage associated with the operating mode.

30. An integrated circuit as claimed in claim 27, wherein the voltage supply multiplexer comprises voltage generation circuitry, the voltage generation circuitry providing for selective generation of the at least one selected supply voltage.

31. An integrated circuit as claimed in claim 26, further comprising, in association with the supply voltage configuration circuit, at least one of control circuitry and a test mode generation circuit.

32. An integrated circuit as claimed in claim 26, wherein the first circuit block comprises a plurality of voltage supply nodes and the supply voltage configuration circuit is coupled to the voltage supply nodes so as to enable provision, to selected said nodes on a one-to-one basis, at least one of (i) a specified supply voltage associated with the respective node and (ii) one or more selected supply voltages, each of which supply voltages diverge from the specified supply voltage associated with the respective node and two or more of which supply voltages are selectable substantially independently of one another.

33. An integrated circuit as claimed in claim 32, wherein the first circuit block comprises a memory array, and the voltage supply nodes are coupled to at least one of (i) a memory cell load device, (ii) a memory cell pull-down device, (iii) a bit line load device, (iv) wordline driver pull-up device, and (v) a wordline driver pull-down device.

34. An integrated circuit as claimed in claim 32, further comprising a second circuit block having a specified supply voltage associated with the operating mode, the second circuit block being coupled to the supply voltage configuration circuit so as to enable selective provision of at least one selected supply voltage that diverges from the second circuit block'"'"'s specified supply voltage.

35. An integrated circuit as claimed in claim 34, wherein the first circuit block comprises a memory array and the second circuit block comprises peripheral circuitry, and wherein the voltage supply nodes are coupled to at least one of (i) a memory cell load device, (ii) a memory cell pull-down device, (iii) a bit line load device, (iv) wordline driver pull-up device, and (v) a wordline driver pull-down device, and wherein the supply voltage configuration circuit is coupled to the voltage supply nodes so as to enable provision, to selected said nodes on a one-to-one basis, at least one of (a) the specified supply voltage associated with the node'"'"'s circuit block and (b) one or more selected supply voltages, each of which supply voltages diverge from the node'"'"'s specified supply voltage, the divergences of the so-provided selected supply voltages against the respective nodes'"'"' specified supply voltages being at least one of (I) all higher, (II) all lower and (III) a combination of higher and lower.

36. A system, the system supporting a screening mode and an operating mode, the system comprising:

a plurality of electrically interconnected integrated circuits, the circuits comprising a first circuit block and a supply voltage configuration circuit associated with the first circuit block;

the first circuit block having a specified supply voltage associated with the operating mode; and

the supply voltage configuration circuit coupled to the first circuit block so as to enable, in screening mode, selective provision to the first circuit block of at least one selected supply voltage that diverges from and is substantially independent of the first circuit block'"'"'s specified supply voltage.

37. The system of claim 36, wherein the plurality of electrically interconnected integrated circuits further comprise a second circuit block and a supply voltage configuration circuit associated with the second circuit block, the second circuit block having a specified supply voltage associated with the operating mode and being coupled to its associated supply voltage configuration circuit so as to enable, in screening mode, selective provision to the second circuit block of at least one selected supply voltage that diverges from the second circuit block'"'"'s specified supply voltage.

38. The system of claim 37, wherein the first circuit block comprises a memory array and the second circuit block comprises peripheral circuitry, and wherein the first and second circuit blocks are associated with a single supply voltage configuration circuit and have respective one or more voltage supply nodes, the voltage supply nodes being coupled to at least one of (i) a memory cell load device, (ii) a memory cell pull-down device, (iii) a bit line load device, (iv) wordline driver pull-up device, and (v) a wordline driver pull-down device, and wherein the supply voltage configuration circuit is coupled to the voltage supply nodes so as to enable provision, to selected said nodes on a one-to-one basis, at least one of (a) the specified supply voltage associated with the node'"'"'s circuit block and (b) one or more selected supply voltages, each of which supply voltages diverge from the node'"'"'s specified supply voltage, the divergences of the so-provided selected supply voltages against the respective nodes'"'"' specified supply voltages being at least one of (I) all higher, (II) all lower and (III) a combination of higher and lower.