Measurement system for detecting chemical species within a semiconductor processing device chamber

• US 5,999,886 A
• Filed: 09/05/1997
• Issued: 12/07/1999
• Est. Priority Date: 09/05/1997
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Martin, Michel A., Fidler, James K., Markle, Richard J.
• Primary Examiner(s): WACHSMAN, HAL D
• Application Number:
  US08/923,492
• Time in Patent Office: 823 Days
• Field of Search: 702/31, 702/22-24, 702/25-30, 702/32, 702/81-84, 702/138, 702/140, 702/182-185, 702/189, 702/193, 230/492.2, 430/322-324, 430/297-299, 430/311-314, 73/23.2, 73/23.27, 73/23.21-23.23, 73/23.34-23.37, 73/23.41, 73/24.04, 73/29.01, 73/31.06, 422/83, 422/105, 422/108, 422/89, 422/98, 438/680, 438/3, 438/10-14, 438/17, 438/18, 438/905-907, 438/909, 438/FOR 141, 364/468.16, 364/17, 364/468.26-28, 364/469.02, 364/528.01, 364/36
• US Class Current: 702/31
• CPC Class Codes: G01N 33/0062 concerning the measuring method or the display, e.g. intermittent measurement or digital display

Abstract

A measurement system is presented for detecting the presence of one or more harmful chemical species within one or more chambers of a semiconductor wafer processing device. Chemical species of interest include oxygen (O₂), nitrogen (N₂), moisture (H₂ O), and organic compounds associated with photoresist processing. Such organic compounds include isopropyl alcohol (CH₃ CH(OH)CH₃), acetone (CH₃ COCH₃), and ethyl-3-ethoxy propionate (C₇ H₁₄ O₃). Candidate semiconductor wafer processing devices include evaporation, sputtering, and low pressure chemical vapor deposition (LPCVD) devices. The measurement system measures the concentrations of chemical species within each monitored chamber of the semiconductor wafer processing device: (i) during the processing of semiconductor wafers within the semiconductor wafer processing device, and (ii) during recovery periods following preventive maintenance or repair activities performed upon the semiconductor wafer processing device. Performing measurements during recovery periods aids in returning the semiconductor wafer processing device to service following preventive maintenance or repair activities. Data collection is not performed at other times (e.g., when the semiconductor wafer processing device is idle) in order to reduce data storage requirements. The measurement system includes one or more ambient sampling sensors coupled to a data collection computer through a control interface. Each ambient sampling sensor is in gaseous communication with ambients within the one or more monitored chambers. The control interface triggers data collection during the processing of one or more semiconductor wafers within the semiconductor wafer processing device, and following a maintenance activity performed upon the semiconductor wafer processing device.

Claims

1. A measurement system for detecting the presence of a chemical species within a chamber of a semiconductor wafer processing device, comprising:

a sensor for sampling a gaseous environment within the chamber, wherein the sensor is coupled to receive a control signal and configured to produce a data signal in response to the control signal, and wherein the data signal is indicative of chemical species within the gaseous environment;

a control interface coupled to the sensor for producing the control signal and for receiving and thereafter providing the data signal (i) during the processing of a semiconductor wafer within the semiconductor wafer processing device, and (ii) following a maintenance activity performed upon the semiconductor wafer processing device;

a data collection computer coupled to receive the data signal from the control interface and configured to store the data signal; and

wherein the control interface is coupled to receive a pressure signal, and wherein a present value of the pressure signal indicates normal operation of the semiconductor wafer processing device, and wherein past values of the pressure signal are indicative of the performance of a maintenance activity upon the semiconductor wafer processing device, and wherein the control interface is configured to assert the control signal dependent upon present and past values of the pressure signal.

2. The measurement system as recited in claim 1, wherein the semiconductor wafer processing device is a deposition system.

3. The measurement system as recited in claim 1, wherein the chemical species is selected from the group consisting of oxygen (O₂), nitrogen (N₂), and moisture (H₂ O).

4. The measurement system as recited in claim 1, wherein the chemical species is an organic compound associated with photoresist processing.

5. The measurement system as recited in claim 1, wherein the chemical species is selected from the group consisting of oxygen (O₂), nitrogen (N₂), moisture (H₂ O), isopropyl alcohol (CH₃ CH(OH)CH₃), acetone (CH₃ COCH₃), and ethyl-3-ethoxy propionate (C₇ H₁₄ O₃).

6. The measurement system as recited in claim 1, wherein the sensor is a quadrupole mass spectrometer detector.

7. The measurement system as recited in claim 1, wherein the control interface is coupled to receive a processing signal indicative of the processing of a semiconductor wafer within the semiconductor wafer processing device, and wherein the control interface is configured to assert the control signal dependent upon the processing signal.

8. A measurement system for detecting the presence of a chemical species within a deposition chamber of a deposition system, comprising:

a sensor for sampling a gaseous environment within the deposition chamber, wherein the sensor is coupled to receive a control signal, and wherein the sensor is configured to produce an analog data signal in response to the control signal, and wherein the analog data signal is indicative of the presence of the chemical species within the deposition chamber;

a control interface coupled to the sensor, wherein the control interface is configured to receive;

the analog data signal;

a processing signal indicative of the processing of a semiconductor wafer within the deposition chamber; and

a first pressure signal, wherein a present value of the first pressure signal is indicative of normal operation of the deposition system, and wherein past values of the first pressure signal are indicative of the performance of a maintenance activity upon the deposition chamber;

wherein the control interface is configured to convert the analog data signal to a digital data signal and to provide the digital data signal, and wherein the control interface is configured to produce the control signal dependent upon the processing signal and the present and past values of the first pressure signal; and

a data collection computer coupled to receive the digital data signal from the control interface and to store the digital data signal.

9. The measurement system as recited in claim 8, wherein the sensor is a quadrupole mass spectrometer detector.

10. The measurement system as recited in claim 8, wherein the chemical species is selected from the group consisting of oxygen (O₂), nitrogen (N₂), and moisture (H₂ O).

11. The measurement system as recited in claim 8, wherein the chemical species is an organic compound associated with photoresist processing.

12. The measurement system as recited in claim 8, wherein the chemical species is selected from the group consisting of oxygen (O₂), nitrogen (N₂), moisture (H₂ O), isopropyl alcohol (CH₃ CH(OH)CH₃), acetone (CH₃ COCH₃), and ethyl-3-ethoxy propionate (C₇ H₁₄ O₃).

13. The measurement system as recited in claim 8, wherein the processing signal is produced by a processing sensor.

14. The measurement system as recited in claim 8, wherein the first pressure signal is produced by a manometer.

15. The measurement system as recited in claim 8, wherein the control interface comprises:

a logic controller coupled between the sensor and the data collection computer, wherein the logic controller is coupled to receive the first pressure signal, a maintenance signal indicative of the performance of maintenance upon the deposition system, and the processing signal, and wherein the logic controller is configured to produce the control signal and a second and third pressure signals dependent upon the first pressure signal; and

a logic circuit coupled to the logic controller and coupled to receive the processing signal and the second and third pressure signals, wherein the logic circuit is configured to produce the maintenance signal dependent upon the second and third pressure signals.

16. The measurement system as recited in claim 15, wherein the logic controller asserts the second pressure signal when the first pressure signal indicates a pressure greater than a first threshold value, and wherein the logic controller asserts the third pressure signal when the first pressure signal indicates a pressure greater than a second threshold value, and wherein the second threshold value is greater than the first threshold value, and wherein both the first and second threshold values exceed a normal operating pressure.

17. The measurement system as recited in claim 16, wherein the first threshold value is about 0.05 torr, the second threshold value is approximately 0.1 torr, and the normal operating pressure is about 1.0×

10^-7 torr.

18. The measurement system as recited in claim 16, wherein the logic circuit asserts the maintenance signal when both the first and second pressure signals are asserted and the first pressure signal is asserted before the second pressure signal, indicating an increase in first pressure signal above the normal operating pressure due to maintenance performed upon the deposition system.

19. The measurement system as recited in claim 18, wherein once the logic circuit asserts the maintenance signal, the logic circuit continues to assert the maintenance signal until the first pressure signal indicates a return to normal operation and the processing signal indicates the processing of a semiconductor wafer within the deposition chamber.

20. The measurement system as recited in claim 15, wherein the logic circuit comprises a select switch and a maintenance switch, and wherein the select switch comprises an automatic position and a manual position, and wherein when the select switch is in the automatic position the logic circuit is configured to produce the maintenance signal dependent upon the second and third pressure signals, and wherein when the select switch is in the manual position the logic circuit is configured to produce the maintenance signal when a user activates the maintenance switch.

21. The measurement system as recited in claim 15, wherein the sensor is a quadrupole mass spectrometer detector operating in either a scanning mode, an idle mode, or a shutdown mode dependent upon the control signal.

22. The measurement system as recited in claim 21, wherein the sensor produces the analog data signal when operating in the scanning mode, and wherein the logic controller issues the control signal placing the sensor in the scanning mode when the value of the first pressure signal is less than a threshold value and the processing signal is asserted.

23. The measurement system as recited in claim 22, wherein the threshold value is about 0.01 torr.

24. The measurement system as recited in claim 23, wherein the logic controller issues the control signal placing the sensor in the scanning mode when the value of the first pressure signal exceeds the threshold value and the maintenance signal is asserted.

25. The measurement system as recited in claim 23, wherein the logic controller issues the control signal placing the sensor in the idle mode when the value of the first pressure signal is less than the threshold value and both the processing and maintenance signals are deasserted.

26. The measurement system as recited in claim 23, wherein the logic controller issues the control signal placing the sensor in the shutdown mode when the value of the first pressure signal is greater than the threshold value.