Enhanced reactive DC sputtering system

• US 6,001,224 A
• Filed: 09/29/1995
• Issued: 12/14/1999
• Est. Priority Date: 04/02/1993
• Status: Expired due to Fees

• Current Assignee: Advanced Energy Industries Incorporated
• Original Assignee: Advanced Energy Industries Incorporated
• Inventors: Drummond, Geoffrey N., Scholl, Richard A.
• Primary Examiner(s): MCDONALD, RODNEY GLENN
• Application Number:
  US08/532,559
• Time in Patent Office: 1,537 Days
• Field of Search: 204/192.12, 204/192.13, 204/192.15, 204/192.22, 204/298.03, 204/298.06, 204/298.08
• US Class Current: 204/192.12
• CPC Class Codes: H01J 2237/0044 of objects being observed or treated
• CPC Class Codes: H01J 2237/0206 Extinguishing, preventing or controlling unwanted discharges
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34

Abstract

An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor (13 and 14) is switched to ground (9) or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma (5) prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system (22) in the power source (1).

Claims

1. A method of reactive sputtering comprising the steps of:

a. supplying a material target to expose coating material within a coating chamber;

b. supplying at least one reactive gas within said coating chamber wherein said at least one reactive gas reacts with said coating material to form electrically insulating material;

c. finishing direct current power to said coating chamber to create a plasma composed of charged particles;

d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma;

e. clearing an uneven buildup of charged particles within said chamber independent of sensing an arc condition; and

then

f. continuing to cause deposition upon said substrate.

2. A method of reactive sputtering as described in claim 1 wherein said step of clearing an uneven buildup of charged particles is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.

3. A method of reactive sputtering comprising the steps of:

a. supplying a material target to expose coating material within a coating chamber;

b. supplying at least one reactive gas within said coating chamber wherein said at least one reactive gas reacts with said coating material to form electrically insulating material;

c. finishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles;

d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; and

e. reversing said voltage independent of sensing an arc condition during said deposition.

4. A method of reactive sputtering as described in claim 3 wherein said voltage which is applied within said chamber has a normal operating level and wherein said step of reversing said voltage comprises the step of applying a reverse voltage at a level of between 5 and 20 percent of the normal operating level.

5. A method of reactive sputtering as described in claim 3 wherein said coating chamber is maintained at a voltage level and wherein said step of reversing said voltage comprises the step of applying a reverse voltage of between 10 and 100 volts with respect to the voltage level of said coating chamber.

6. A method of reactive sputtering as described in claim 3 or 5 wherein said step of reversing said voltage occurs for a time which does not extinguish said plasma.

7. A method of reactive sputtering as described in claim 3 wherein said step of reversing said voltage is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.

8. A method of reactive sputtering as described in claim 3 wherein said step of reversing said voltage occurs for a time of from approximately 1 microsecond to approximately 10 microseconds.

9. A method of reactive sputtering as described in claim 8 wherein said step of reversing said voltage is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.

10. A method of reactive sputtering comprising the steps of:

a. supplying a material target to expose coating material within a coating chamber;

b. supplying at least one reactive gas within said coating chamber wherein said at least one reactive gas reacts with said coating material to form electrically insulating material;

v. furnishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles;

d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; and

e. interrupting said direct current power independent of sensing an arc condition; and

then

f. continuing to cause deposition upon said substrate.

11. A method of reactive sputtering as described in claim 10 wherein said step of furnishing direct current power is accomplished continuously for a continuous deposition time period and wherein said step of interrupting said direct current power occurs for a time which does not extinguish said plasma.

12. A method of reactive sputtering as described in claim 10 wherein said step of interrupting said direct current power is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.

13. A method of reactive sputtering as described in claim 10 wherein said step of interrupting said direct current power occurs for a time of from approximately 1 microsecond to approximately 10 microseconds.

14. A method of reactive sputtering as described in claim 13 wherein said step of interrupting said direct current power is accomplished from approximately every 10 microseconds to approximately every 2000 microseconds.

15. A reactive plasma sputtering system comprising:

a. a coating chamber;

b. a material target disposed to expose coating material within said chamber;

c. a reactive gas supply supplying reactive gas connected to said coating chamber wherein said reactive gas reacts with said coating material to form electrically insulating material;

d. an anode positioned within said coating chamber in proximity to said material target;

e. a DC power source which applies an output voltage across said anode and said material target; and

f. voltage reversal circuitry which acts independent of sensing an arc condition.

16. A reactive plasma sputtering system as described in claim 15 wherein said voltage reversal circuitry creates a reverse voltage level and wherein said reverse voltage level is at least five percent of said output voltage.

17. A reactive plasma sputtering system as described in claim 15 wherein said DC power source continuously applies a voltage across said anode and said material target for a continuous deposition time period and wherein said voltage reversal circuitry causes a voltage reversal for a time which does not extinguish said plasma.

18. A reactive plasma sputtering system as described in claim 15 and further comprising a sensor wherein said voltage reversal circuitry is responsive to said sensor.

19. A reactive plasma sputtering system as described in claim 18 wherein said sensor detects said output voltage from said DC power source.

20. A reactive plasma sputtering system as described in claim 18 wherein said sensor detects a rate of change in the output voltage from said DC power source.

21. A reactive plasma sputtering system as described in claim 20 wherein said sensor also detects said output voltage from said DC power source.

22. A reactive plasma sputtering system as described in claim 15 wherein said DC power source has a first lead connected to said material target and a second lead connected to said anode and wherein said voltage reversal circuitry comprises:

a. an inductor connected in series along said first lead and having first and second inductor portions wherein said first and second portions are magnetically coupled; and

b. a switch connected from said second lead to said first lead at a point in between said first and second inductor portions.

23. A reactive plasma sputtering system as described in claim 22 wherein said voltage reversal circuitry further comprises a sensor and wherein said switch is responsive to said sensor.

24. A reactive plasma sputtering system as described in claim 23 wherein said sensor detects said output voltage from said DC power source.

25. A reactive plasma sputtering system as described in claim 23 wherein said sensor detects a rate of change in the output voltage from said DC power source.

26. A reactive plasma sputtering system as described in claim 25 wherein said sensor also detects said output voltage from said DC power source.

27. A reactive plasma sputtering system as described in claim 25 and further comprising timer circuitry wherein said voltage reversal circuitry is responsive to said timer circuitry.

28. A reactive plasma sputtering system as described in claim 27 wherein said timer circuitry causes said voltage reversal circuitry to activate from approximately every 10 microseconds to approximately every 2000 microseconds.

29. A reactive plasma sputtering system as described in claim 27 wherein said timer circuitry causes said voltage reversal circuitry to activate for approximately 1 microsecond to approximately 10 microseconds.

30. A reactive plasma sputtering system as described in claim 29 wherein said timer circuitry causes said voltage reversal circuitry to activate from approximately every 10 microseconds to approximately every 2000 microseconds.

38. A reactive plasma sputtering system as described in claim 15 wherein said output voltage creates a plasma current, wherein said voltage reversal circuitry creates a reverse voltage level for a reverse voltage time, and wherein said reverse voltage level for said reverse voltage time allow said plasma current to reach zero.

31. A reactive plasma sputtering system comprising:

a. a coating chamber;

b. a material target disposed to expose coating material within said chamber;

c. a reactive gas supply supplying reactive gas connected to said coating chamber wherein said reactive gas reacts with said coating material to form electrically insulating material;

d. a DC power source which applies direct current power within said coating chamber to cause processing; and

e. clearing circuitry which acts to clear an uneven buildup of charged particles independent of sensing an arc condition during processing and then to automatically resume said processing.

32. A reactive plasma sputtering system as described in claim 31 wherein said clearing circuitry causes periodic clearing from approximately every 10 microseconds to approximately every 2000 microseconds.

33. A reactive plasma sputtering system comprising:

a. a coating chamber;

b. a material target disposed to expose coating material within said chamber;

c. a reactive gas supply supplying reactive gas connected to said coating chamber wherein said reactive gas reacts with said coating material to form electrically insulating material;

d. a DC power source which applies direct current power within said coating chamber to cause processing; and

e. interruption circuitry which interrupts said direct current power independent of sensing an arc condition during processing and then which automatically resumes said processing.

34. A reactive plasma sputtering system as described in claim 33 wherein said interruption circuitry acts to cause interruption for a time which does not extinguish said plasma.

35. A reactive plasma sputtering system as described in claim 33 wherein said interruption circuitry causes interruption from approximately every 10 microseconds to approximately every 2000 microseconds.

36. A reactive plasma sputtering system as described in claim 33 wherein said interruption circuitry causes interruption for approximately 1 microsecond to approximately 10 microseconds.

37. A reactive plasma sputtering system as described in claim 36 wherein said interruption circuitry activates from approximately every 10 microseconds to approximately every 2000 microseconds.