Enhanced reactive DC sputtering system
First Claim
1. A method of reactive sputtering comprising the steps of:
- a. supplying a material target to expose coating material within a coating chamber;
b. supplying at least one reactive gas within said coating chamber wherein said at least one reactive gas reacts with said coating material to form electrically insulating material;
c. finishing direct current power to said coating chamber to create a plasma composed of charged particles;
d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma;
e. clearing an uneven buildup of charged particles within said chamber independent of sensing an arc condition; and
thenf. continuing to cause deposition upon said substrate.
3 Assignments
0 Petitions
Accused Products
Abstract
An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor (13 and 14) is switched to ground (9) or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma (5) prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system (22) in the power source (1).
132 Citations
38 Claims
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1. A method of reactive sputtering comprising the steps of:
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a. supplying a material target to expose coating material within a coating chamber; b. supplying at least one reactive gas within said coating chamber wherein said at least one reactive gas reacts with said coating material to form electrically insulating material; c. finishing direct current power to said coating chamber to create a plasma composed of charged particles; d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; e. clearing an uneven buildup of charged particles within said chamber independent of sensing an arc condition; and
thenf. continuing to cause deposition upon said substrate. - View Dependent Claims (2)
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3. A method of reactive sputtering comprising the steps of:
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a. supplying a material target to expose coating material within a coating chamber; b. supplying at least one reactive gas within said coating chamber wherein said at least one reactive gas reacts with said coating material to form electrically insulating material; c. finishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles; d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; and e. reversing said voltage independent of sensing an arc condition during said deposition. - View Dependent Claims (4, 5, 6, 7, 8, 9)
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10. A method of reactive sputtering comprising the steps of:
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a. supplying a material target to expose coating material within a coating chamber; b. supplying at least one reactive gas within said coating chamber wherein said at least one reactive gas reacts with said coating material to form electrically insulating material; v. furnishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles; d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma; and e. interrupting said direct current power independent of sensing an arc condition; and
thenf. continuing to cause deposition upon said substrate. - View Dependent Claims (11, 12, 13, 14)
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15. A reactive plasma sputtering system comprising:
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a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply supplying reactive gas connected to said coating chamber wherein said reactive gas reacts with said coating material to form electrically insulating material; d. an anode positioned within said coating chamber in proximity to said material target; e. a DC power source which applies an output voltage across said anode and said material target; and f. voltage reversal circuitry which acts independent of sensing an arc condition. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 38)
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31. A reactive plasma sputtering system comprising:
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a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply supplying reactive gas connected to said coating chamber wherein said reactive gas reacts with said coating material to form electrically insulating material; d. a DC power source which applies direct current power within said coating chamber to cause processing; and e. clearing circuitry which acts to clear an uneven buildup of charged particles independent of sensing an arc condition during processing and then to automatically resume said processing. - View Dependent Claims (32)
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33. A reactive plasma sputtering system comprising:
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a. a coating chamber; b. a material target disposed to expose coating material within said chamber; c. a reactive gas supply supplying reactive gas connected to said coating chamber wherein said reactive gas reacts with said coating material to form electrically insulating material; d. a DC power source which applies direct current power within said coating chamber to cause processing; and e. interruption circuitry which interrupts said direct current power independent of sensing an arc condition during processing and then which automatically resumes said processing. - View Dependent Claims (34, 35, 36, 37)
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Specification