Methods for manufacturing a semiconductor package having a sacrificial layer
First Claim
1. A method of making a semiconductor chip package, comprising the steps of:
- providing a sacrificial layer;
selectively forming an array of conductive pads on a first surface of the sacrificial layer such that a plurality of central regions are defined by the pads;
attaching back surfaces of a plurality of semiconductor chips to the sacrificial layer within the central regions so that a contact bearing surface of each said chip faces away from the sacrificial layer;
electrically connecting each contact to a respective pad;
depositing curable dielectric material on the first surface of the sacrificial layer such that the pads, electrical connections and chip are each encapsulated and curing the dielectric material; and
removing at least a portion of the sacrificial layer, whereby a plurality of semiconductor chip packages are manufactured simultaneously using the same sacrificial layer, and wherein said curable dielectric material is deposited so as to form a unitary mass covering said plurality of chips, the method further comprising the step of separating at least some of the packages after the removing step by severing said unitary mass of dielectric material.
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Abstract
A method of manufacturing a semiconductor chip package. A sacrificial layer is used as a base to selectively form an array of conductive pads such that a central region is defined by the pads. A back surface of a semiconductor chip is next attached to the sacrificial layer within the central region between the pads so that the contact bearing surface of the chip faces away from the sacrificial layer. The chip contacts are then electrically connected to respective pads, typically by wire bonding a wire therebetween. A curable, dielectric liquid encapsulant is then deposited on the sacrificial layer such that the pads, electrical connections and chip are fully encapsulated, as by an overmolding operation. The encapsulant is then cured and the sacrificial layer is either completely removed or is selectively removed to expose a surface of the pads for electrical attachment to a PWB and the back surface of the chip for creating a direct thermal path from the chip to the PWB.
682 Citations
44 Claims
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1. A method of making a semiconductor chip package, comprising the steps of:
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providing a sacrificial layer; selectively forming an array of conductive pads on a first surface of the sacrificial layer such that a plurality of central regions are defined by the pads; attaching back surfaces of a plurality of semiconductor chips to the sacrificial layer within the central regions so that a contact bearing surface of each said chip faces away from the sacrificial layer; electrically connecting each contact to a respective pad; depositing curable dielectric material on the first surface of the sacrificial layer such that the pads, electrical connections and chip are each encapsulated and curing the dielectric material; and removing at least a portion of the sacrificial layer, whereby a plurality of semiconductor chip packages are manufactured simultaneously using the same sacrificial layer, and wherein said curable dielectric material is deposited so as to form a unitary mass covering said plurality of chips, the method further comprising the step of separating at least some of the packages after the removing step by severing said unitary mass of dielectric material. - View Dependent Claims (2, 3, 9, 20, 21, 22, 23, 24, 25)
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4. A method of making a semiconductor chip package, comprising the steps of:
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providing a sacrificial layer; selectively forming an array of conductive pads on a first surface of the sacrificial layer such that a central region is defined by the pads; attaching a back surface of a semiconductor chip to the sacrificial layer within the central region so that a contact bearing surface of the chip faces away from the sacrificial layer; electrically connecting each contact to a respective pad; depositing curable dielectric material on the first surface of the sacrificial layer such that the pads, electrical connections and chip are each encapsulated and curing the dielectric material; and removing at least a portion of the sacrificial layer, the method further comprising the step of removing portions of the sacrificial layer prior to the pad forming step so as to create a plurality of cavities within the sacrificial layer, wherein the pad forming step further includes forming each conductive pad within a respective cavity such that the conductive pad material substantially fills the cavity. - View Dependent Claims (5, 6, 7, 8)
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10. A method of making a semiconductor chip package, comprising the steps of:
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providing a sacrificial layer; selectively forming an array of conductive pads on a first surface of the sacrificial layer such that a central region is defined by the pads; attaching a back surface of a semiconductor chip to the sacrificial layer within the central region so that a contact bearing surface of the chip faces away from the sacrificial layer; electrically connecting each contact to a respective pad; depositing curable dielectric material on the first surface of the sacrificial layer such that the pads, electrical connections and chip are each encapsulated and curing the dielectric material so as to form a mass of cured dielectric material having a bottom surface in contact with the sacrificial layer and a top surface remote from the sacrificial layer; and removing at least a portion of the sacrificial layer; wherein at least some of the pads have conductive protrusions which extend upwardly to said top surface of said mass of dielectric material. - View Dependent Claims (11, 12)
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13. A method of making a semiconductor chip package, comprising the steps of:
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providing a sacrificial layer; selectively forming an array of conductive pads on a first surface of the sacrificial layer such that a central region is defined by the pads; attaching a back surface of a semiconductor chip to the sacrificial layer within the central region so that a contact bearing surface of the chip faces away from the sacrificial layer; electrically connecting each contact to a respective pad; depositing curable dielectric material on the first surface of the sacrificial layer such that the pads, electrical connections and chip are each encapsulated and curing the dielectric material; and removing at least a portion of the sacrificial layer;
wherein the pad forming step further includes the step of disposing a dielectric base material between the sacrificial layer and the conductive pads such that the pads are formed on and supported by the base material. - View Dependent Claims (14, 15, 16)
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17. A method of making a semiconductor chip package, comprising the steps of:
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providing a sacrificial layer; selectively forming an array of conductive pads on a first surface of the sacrificial layer such that a central region is defined by the pads; attaching a back surface of a semiconductor chip to the sacrificial layer within the central region so that a contact bearing surface of the chip faces away from the sacrificial layer; electrically connecting each contact to a respective pad; depositing curable dielectric material on the first surface of the sacrificial layer such that the pads, electrical connections and chip are each encapsulated and curing the dielectric material; and removing at least a portion of the sacrificial layer wherein the attaching step further includes the step of attaching a microelectronic component to the contact bearing surface of the chip, wherein the electrically connecting step further includes connecting the contacts on the component to a respective pad. - View Dependent Claims (18, 19)
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26. A method of making a semiconductor chip package, comprising the steps of:
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providing an electrically conductive sacrificial layer; selectively forming an protruding array of conductive pads and a protruding central base in a first surface of the sacrificial layer such that the central base is located within a region defined by the pads, the pad forming step including the step of selectively removing material from the first surface of the sacrificial layer; attaching a back surface of a semiconductor chip to the central base so that the contact bearing surface of the chip faces away from the sacrificial layer; electrically connecting each contact to a respective pad; depositing curable dielectric material on the first surface of the sacrificial layer such that the pads, base, electrical connections and chip are each encapsulated and curing the dielectric material; and selectively removing portions of the sacrificial layer such that the pads and central base are exposed on a bottom surface of the package. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34)
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35. A method of making a semiconductor chip package, comprising the steps of:
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providing a sheet-like dielectric layer; selectively forming an array of conductive pads and a central base on a first surface of the dielectric layer such that the central base is located within a region defined by the pads; attaching a back surface of a semiconductor chip to the central base so that the contact bearing surface of the chip faces away from the dielectric layer; electrically connecting each contact to a respective pad; depositing curable dielectric material on the first surface of the dielectric layer such that the pads, electrical connections and chip are each encapsulated and curing the dielectric material; and selectively removing portions of the dielectric layer such that portions of the pads and central base are exposed on a bottom surface of the package. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43, 44)
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Specification