Method for forming a capacitor

• US 6,001,684 A
• Filed: 06/04/1997
• Issued: 12/14/1999
• Est. Priority Date: 06/04/1997
• Status: Expired due to Term

• Current Assignee: Polaris Innovations Limited (Wi-LAN Inc.)
• Original Assignee: Siemens AG
• Inventors: Shen, Hua
• Primary Examiner(s): TSAI, H JEY
• Application Number:
  US08/868,555
• Time in Patent Office: 923 Days
• Field of Search: 438/561-563, 438/243-256, 438/386-396
• US Class Current: 438/246
• CPC Class Codes: H01L 29/66181 Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
• CPC Class Codes: H01L 29/945 Trench capacitors
• CPC Class Codes: H10B 12/038 the capacitor being in a trench in the substrate
• CPC Class Codes: H10B 12/37 the capacitor being at least partially in a trench in the substrate

Abstract

A method for forming a capacitor in a semiconductor body is provided. The method includes the step of forming a trench in a portion of a surface of the semiconductor body. The trench having sidewalls and a bottom. A doped film is deposited over the surface of the semiconductor body. Portions of the doped film are deposited over the sidewalls and bottom of the trench. The semiconductor body is heated and the doped film to produce a liquid phase interface region therebetween while diffusing dopant in the doped film into a region of the semiconductor body. The interface region is cooled to return such interface region to a solid phase. The doped film and the interface region are removed from the semiconductor body while leaving the doped region in the semiconductor body. A dielectric film is deposited over the doped region of the semiconductor body. A doped material is deposited over the dielectric film, the doped material and the doped region in the semiconductor body providing electrodes for the capacitor and the dielectric film providing a dielectric for the capacitor. The heating and cooling steps comprise the steps of: subjecting the semiconductor body and doped film to an energized source of radiant heat to heat such body and doped film and subsequently de-energizing the energized source of radiant heat to cool the doped semiconductor body and doped film. The cooling is at a rate sufficiently rapid to avoid formation of silicon arsenic precipitate.

Claims

1. A method for forming a capacitor, comprising the steps of:

heating a semiconductor body comprising a doped film deposited thereon to produce a liquid phase interface region therebetween while diffusing dopant in the doped film into a region of the semiconductor body; and

cooling the interface region to return such interface region to a solid phase, such doped region in the semiconductor body providing one electrode of the capacitor;

forming a dielectric film over the doped region, such dielectric film providing a dielectric of the capacitor; and

depositing a doped material over the dielectric film, the doped material providing a second electrode for the capacitor.

2. A method for forming a capacitor, comprising the steps of:

(a) heating a semiconductor body and a doped film deposed thereon to produce a liquid phase interface region therebetween while diffusing dopant in the doped film into a region of the semiconductor body; and

(b) cooling the interface region to return such interface region to a solid phase, such doped semiconductor body providing one electrode of the capacitor;

(c) forming a dielectric film over the doped region;

such dielectric film providing a dielectric of the capacitor;

(d) depositing a doped material over the dielectric film, the doped material providing a second electrode for the capacitor; and

wherein the cooling is at a rate sufficiently rapid to avoid formation of silicon arsenic precipitate.

3. The method recited in claim 2 wherein the heating and cooling steps comprise the steps of:

subjecting the semiconductor body and doped film to an energized source of radiant heat to heat such body and doped film and subsequently de-energizing the energized source of radiant heat to cool the body and doped film.

4. A method for forming a capacitor in a semiconductor body, comprising the step of:

forming a trench in a portion of a surface of the semiconductor body, such trench having sidewalls and a bottom;

depositing an doped film over the surface of the semiconductor body, portions of the doped film being deposited over the sidewalls and bottom of the trench;

heating the semiconductor body and the doped film to produce a liquid phase interface region therebetween while diffusing dopant in the liquid interface region into a region of the semiconductor body;

cooling the interface region to return such interface region to a solid phase;

removing the doped film from the semiconductor body and solid phase interface region while leaving the doped region in the semiconductor body;

depositing a dielectric film over the doped region of the semiconductor body;

depositing a doped material over the dielectric film, the doped material and the doped region in the semiconductor body providing electrodes for the capacitor and the dielectric film providing a dielectric for the capacitor; and

wherein the heating and cooling steps comprise the steps of;

subjecting the semiconductor body and doped film to an energized source of radiant heat to heat such body and doped film and subsequently de-energizing the energized source of radiant heat to cool the body and doped film.

5. A method for forming a capacitor of a DRAM cell, such cell comprising the capacitor and an electrically connected transistor, such method comprising the steps of:

(a) heating a semiconductor body and a doped film deposited thereon to produce a liquid phase interface region therebetween while diffusing dopant in the doped film into a region of the semiconductor body; and

(b) cooling the interface region to return such interface region to a solid phase, such doped semiconductor body providing one electrode of the capacitor;

(c) forming a dielectric film over the doped region, such dielectric film providing a dielectric of the capacitor; and

(d) depositing a doped material over the dielectric film, the doped material providing a second electrode for the capacitor; and

wherein the cooling is at a rate sufficiently rapid to avoid formation of silicon arsenic precipitate.

6. A method comprising the steps of:

(a) heating a semiconductor body and a doped film deposited thereon to produce a liquid phase interface region therebetween while diffusing dopant in the doped film into a region of the semiconductor body; and

(b) cooling the interface region to return such interface region to a solid phase;

wherein the body comprises silicon and the doped film comprises arsenic; and

wherein the cooling is at a rate sufficiently rapid to avoid formation of silicon arsenic precipitate.

7. The method recited in claim 6 wherein the heating and cooling steps comprise the steps of:

subjecting the semiconductor body and doped film to an energized source of radiant heat to heat such body and doped film and subsequently de-energizing the energized source of radiant heat to cool the body and doped film.

8. The method recited in claim 7 wherein the doped film comprises arsenic doped glass and wherein the semiconductor body comprises silicon and wherein the silicon body and the arsenic doped glass layer disposed on a surface portion of the silicon body are heated to a temperature of at least 1097°

C. and subsequently cooled.

9. The method recited in claim 8 wherein the body and the doped film are cooled at a rate sufficiently rapid to avoid formation of silicon arsenic precipitate.

10. The method recited in claim 8 wherein the heating and cooling steps comprise the steps of:

subjecting the semiconductor body and doped film to an energized source of radiant heat to heat such body and doped film and subsequently de-energizing the energized source of radiant heat to cool the body and doped film.

11. A method for forming a capacitor, comprising the steps of:

(a) heating a semiconductor body and a doped film deposited thereon to a temperature of at least 1097 degrees Centigrade for a period of time less than a few minutes to produce a liquid phase interface region therebetween while diffusing dopant in the doped film into a region of the semiconductor body; and

(b) cooling the interface region to return such interface region to a solid phase, such doped semiconductor body providing one electrode of the capacitor;

(c) forming a dielectric film over the doped region, such dielectric film providing a dielectric of the capacitor; and

(d) depositing a doped material over the dielectric film, the doped material providing a second electrode for the capacitor.

12. The method recited in claim 11 wherein the heating is for a period of time of about one to two minutes.

13. The method recited in claim 12 wherein the heating increases temperature at a rate in the order of 100 degrees Centigrade per second.

14. The method recited in claim 11 wherein the heating and cooling steps comprise the steps of:

subjecting the semiconductor body and doped film to an energized source of radiant heat to heat such body and doped film and subsequently de-energizing the energized source of radiant heat to cool the body and doped film.

15. A method for forming a capacitor, comprising the steps of:

(a) heating a semiconductor body and a doped film deposited thereon to a temperature at a temperature of at least 1097 degrees Centigrade for a period of time less than a few minutes to produce a liquid phase interface region therebetween while diffusing dopant in the doped film into a region of the semiconductor body; and

(b) cooling the interface region to return such interface region to a solid phase, such doped semiconductor body providing one electrode of the capacitor;

(c) forming a dielectric film over the doped region, such dielectric film providing a dielectric of the capacitor; and

(d) depositing a doped material over the dielectric film, the doped material providing a second electrode for the capacitor.

16. The method recited in claim 15 wherein the heating is for a period of time of about one to two minutes.

17. The method recited in claim 15 wherein the heating increases temperature at a rate in the order of 100 degrees Centigrade per second.

18. The method recited in claim 15 wherein the heating and cooling steps comprise the steps of:

subjecting the semiconductor body and doped film to an energized source of radiant heat to heat such body and doped film and subsequently de-energizing the energized source of radiant heat to cool the body and doped film.

19. A method comprising the steps of:

(a) heating a semiconductor body and a doped film thereon to a temperature greater than at least 1097 degrees Centigrade for a period of time of less than a few minutes to produce a liquid phase interface region therebetween while diffusing dopant in the doped film into a region of the semiconductor body; and

(b) cooling the interface region to return such interface region to a solid phase.

20. The method recited in claim 19 wherein the heating is for a period of time of about one to two minutes.

21. The method recited in claim 19 wherein the temperature of the heating increasing at a rate in the order of 100 degrees Centigrade per second.

22. The method recited in claim 19 wherein the heating and cooling steps comprise the steps of:

subjecting the semiconductor body and doped film to an energized source of radiant heat to heat such body and doped film and subsequently de-energizing the energized source of radiant heat to cool the body and doped film.

23. The method recited in claim 22 wherein the doped film comprises arsenic doped glass and wherein the semiconductor body comprises silicon.

24. The method recited in claim 19 wherein the body and the doped film are cooled at a rate sufficiently rapid to avoid formation of silicon arsenic precipitate.