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Method of making a metal to metal antifuse

  • US 6,001,693 A
  • Filed: 09/01/1995
  • Issued: 12/14/1999
  • Est. Priority Date: 10/06/1994
  • Status: Expired due to Term
First Claim
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1. A process for fabricating a metal-to-metal antifuse comprising the following steps:

  • (a) forming a bottom electrode having an upper surface over an insulating portion of a microcircuit structure;

    (b) forming an interlayer dielectric layer over said bottom electrode;

    (c) etching an antifuse cell opening in and through said interlayer dielectric layer so as to expose a portion of said upper surface of said bottom electrode;

    (d) blanket depositing a first barrier metal layer over said interlayer dielectric layer and in said antifuse cell opening and over and in physical and electrical contact with said bottom electrode;

    (e) spin depositing a layer of photoresist over said first barrier metal layer;

    (f) etching back said photoresist and said first barrier metal layer so as to leave only a cup-shaped portion of said first barrier metal layer disposed in said antifuse cell opening;

    (g) stripping the remaining photoresist from within said cup-shaped portion;

    (h) depositing an antifuse material layer over and in said cup-shaped portion and over said interlayer dielectric layer;

    (i) depositing a second barrier metal layer over said antifuse material layer;

    (j) patterning and etching said antifuse material layer and said second barrier metal layer; and

    (k) forming a top electrode over said second barrier metal layer.

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