Non-thermal process for annealing crystalline materials

• US 6,001,715 A
• Filed: 06/26/1996
• Issued: 12/14/1999
• Est. Priority Date: 06/26/1996
• Status: Expired due to Term

• Current Assignee: Navy The United Stated of America As Represented By The Secretary of The
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Grun, Jacob, Donnelly, David William, Manka, Charles Keith, Covington, Billy Charles
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US08/670,909
• Time in Patent Office: 1,266 Days
• Field of Search: 438/797, 438/378, 438/473, 438/535, 438/690, 438/940, 438/487, 438/502, 438/509, 438/796, 438/512, 438/514, 117/4-10
• US Class Current: 438/535
• CPC Class Codes: H01L 21/30 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 manufacture of electrodes thereon H01L21/28
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence

Abstract

Bulk crystalline materials are annealed by introducing into them mechanical energy of sufficient intensity to create a large amplitude sound wave. The mechanical energy may be introduced into the material, for example, by laser ablation. Where the bulk crystalline material is a doped semiconductor, the process also electrically activates the material.

Claims

1. A method of mechanically annealing and electrically activating a volume of a crystalline semiconductor doped by implantation, comprising the step of forming an ablation plasma on a surface of said doped crystalline semiconductor by focusing energy onto a spot on said surface so as to launch into said volume of said doped crystalline semiconductor outside said spot a sound wave of sufficient intensity to propagate within, mechanically anneal, and electrically activate said volume while temperatures within said mechanically annealed and electrically activated volume remain below a thermal annealing temperature of said doped crystalline semiconductor.

2. The method of claim 1, wherein said step of forming an ablation plasma damages only said spot.

3. The method of claim 1, wherein said ablation plasma is formed by focusing a laser beam on said spot.

4. The method of claim 3, wherein said spot on said surface of said doped crystalline semiconductor is irradiated with laser energy of about 0.1 J-100 J.

5. The method of claim 4, wherein said spot on said surface of said doped crystalline semiconductor is irradiated with laser energy of about 1 J-10 J.

6. The method of claim 3, wherein said laser beam has an intensity of greater than about 10⁹ W/cm².

7. The method of claim 3, wherein said laser beam has a wavelength of about 0.5-1.06 μ

m.

8. The method of claim 3, wherein said laser beam is in the form of at least one pulse having a pulse duration of less than about 100 ns.

9. The method of claim 6, wherein said doped crystalline semiconductor is selected from the group consisting of neutron transmutation-doped Si, Si doped by ion implantation with phosphorus, Si doped by ion implantation with boron, and GaAs.

10. The method of claim 1, wherein said step of forming of an ablation plasma damages about 5% or less of said volume of said doped crystalline semiconductor.

11. The method of claim 10, wherein said step of forming an ablation plasma damages about 1% or less of said volume of said doped crystalline semiconductor.

12. The method of claim 1, wherein said doped crystalline semiconductor is a bulk material or a coating.

13. A method of repairing lattice damage within, and electrically activating, a volume of doped crystalline semiconductor doped by ion implantation or neutron transmutation doping, comprising the step of focusing energy onto a spot on a surface of said volume of said doped crystalline semiconductor so as to initiate at said spot a shock wave that degenerates into a sound wave of sufficient intensity to repair said lattice damage throughout, and electrically activate, said volume of said doped crystalline semiconductor outside said spot while temperatures within said repaired volume remain below a thermal annealing temperature of said doped crystalline semiconductor.