Method for forming bumps on a semiconductor die using applied voltage pulses to an aluminum wire

• US 6,001,724 A
• Filed: 11/24/1997
• Issued: 12/14/1999
• Est. Priority Date: 01/29/1996
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Stansbury, Darryl M.
• Primary Examiner(s): Fahmy, Wael
• Assistant Examiner(s): EATON, KURT M
• Application Number:
  US08/976,927
• Time in Patent Office: 750 Days
• Field of Search: 438/613, 438/612, 438/617, 438/469, 438/119, 29/592.1, 228/180.5, 228/4.5, 228/1.1, 257/784, 257/737
• US Class Current: 438/617
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 Fully indexed content
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys

Abstract

A method of forming ball bumps on a pad of a semiconductor die using aluminum wire is provided. The method includes providing an aluminum wire and a thermosonic ball bonding apparatus. The aluminum wire is held in a capillary tool of the ball bonding apparatus and a molten ball is formed on the wire using an electronic flame off (EFO). A forming gas comprising hydrogen and an inert gas, prevents the molten ball from oxidation hardening during formation thereof. Following formation, the molten ball is shaped into a ball bump by the capillary tool and then pressed against the pad while the capillary tool is vibrated. The completed die can be bonded to a substrate pad on a supporting substrate by using a bonding technique such as flip chip bonding, chip on glass bonding, chip on flex bonding, TAB bonding, and z-axis adhesive bonding.

Claims

1. A method for forming a bump on a pad of a semiconductor die, comprising:

providing a wire comprising aluminum;

providing a ball bonding apparatus comprising a negative electrode, and a capillary tool with an opening for holding the wire having a flared sidewall on a terminal end thereof;

forming a molten ball on the wire using electronic flame off performed using the apparatus by applying a plurality of voltage pulses of about 15,000 and 30,000 volts to the wire and to the negative electrode, in a forming gas comprising hydrogen gas and an inert gas to prevent oxidation hardening of the molten ball;

shaping the molten ball into a ball bump with a neck portion attached to the wire by pressing the molten ball against the sidewall;

following the shaping step, attaching the ball bump to the pad by vibrating and pressing the ball bump against the pad using the capillary tool;

heating the ball bump during the attaching step to a temperature of about 80°

C. to 150°

C.; and

following the attaching step, severing the wire from the ball bump at the neck portion thereof by manipulating the capillary tool.

2. The method of claim 1 wherein the wire comprises an alloy selected from the group consisting of aluminum-silicon alloy and aluminum-magnesium alloy.

3. The method of claim 1 wherein the sidewall is flared at an angle of about 45°

with respect to a longitudinal axis of the tool.

4. The method of claim 1 further comprising flip chip bonding the die to a supporting substrate.

5. The method of claim 4 wherein the supporting substrate comprises a field emission display.

6. The method of claim 1 wherein a percentage by volume of the hydrogen gas to the inert gas at room temperature is about 1 to 25%.

7. A method for forming a bump on a pad of a semiconductor die, comprising:

providing a wire comprising aluminum;

providing a ball bonding apparatus comprising a negative electrode and a capillary tool for holding the wire having an opening with a flared sidewall on a terminal end thereof;

forming a molten ball on the aluminum wire by electronic flame off performed using the apparatus by applying a plurality of voltage pulses of about 15,000 volts to 30,000 volts to the wire and to the negative electrode, in a forming gas comprising hydrogen and an inert gas to prevent oxidation hardening of the molten ball;

shaping the molten ball by pressing the molten ball against the sidewall to form a ball bump attached at a neck portion to the wire;

heating the ball bump to a temperature of between about 80°

C. to 150°

C.;

vibrating the capillary tool and pressing the ball bump against the pad; and

following the vibrating step, severing the ball bump at the neck portion by moving the capillary tool with respect to the ball bump.

8. The method of claim 7 wherein the wire comprises an alloy selected from the group consisting of aluminum-silicon and aluminum-magnesium.

9. The method of claim 8 wherein the severing step comprises moving the capillary tool laterally and downwardly with respect to the ball bump.

10. The method of claim 9 wherein the sidewall is flared at an angle of about 45°

.

11. The method of claim 10 wherein the capillary tool presses the ball bump against the pad with a pressure of between about 50 grams to 300 grams.

12. The method of claim 11 further comprising bonding the ball bump to a supporting substrate using a chip on glass bonding process.

13. A method for forming a field emission display comprising:

providing a wire comprising aluminum;

providing a semiconductor die comprising a pad;

providing a ball bonding apparatus comprising a negative electrode and a capillary tool for holding the wire having a flared sidewall on a terminal end thereof;

forming a molten ball on the wire using electronic flame off performed using the apparatus by applying a plurality of voltage pulses to the wire and to the negative electrode, in a forming gas comprising hydrogen and an inert gas to prevent oxidation hardening of the molten ball;

shaping the molten ball into a ball bump by manipulation of the capillary tool or the wire and contact of the molten ball with the sidewall, the ball bump including a neck portion attached to the wire;

attaching the ball bump to the pad by vibrating and pressing the ball bump against the pad using the capillary tool;

heating the ball bump to a temperature of about 80°

C. to 150°

C. during the attaching step;

following the attaching step, severing the wire from the ball bump at the neck portion by manipulating the capillary tool; and

bonding the ball bump to a second pad on the field emission display.

14. The method of claim 13 wherein the second pad comprises a faceplate of the field emission display package.

15. The method of claim 13 wherein bonding the ball bump to the second pad comprises flip chip bonding.

16. The method of claim 13 wherein bonding the ball bump to the second pad comprises chip on glass bonding.

17. The method of claim 13 wherein a percentage by volume of the hydrogen gas to the inert gas at room temperature is about 1 to 25%.

18. The method of claim 13 wherein bonding the ball bump to the second pad comprises chip on flex bonding.

19. The method of claim 13 wherein the wire comprises an aluminum alloy selected from the group consisting of aluminum-silicon and aluminum-magnesium.

20. The method of claim 13 wherein the die comprises field emitter sites aligned with the faceplate.