Driving method for solid-state imaging device provided with blooming prevention structure

• US 6,002,123 A
• Filed: 03/03/1998
• Issued: 12/14/1999
• Est. Priority Date: 03/04/1997
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Suzuki, Ryoji
• Primary Examiner(s): ALLEN, STEPHONE B
• Application Number:
  US09/033,605
• Time in Patent Office: 651 Days
• Field of Search: 250/208.1, 250/214.1, 250/214 R, 348/294, 348/297, 348/298, 348/300-303, 348/308, 348/311, 348/312, 358/482, 358/483, 257/443, 257/444, 257/290-292
• US Class Current: 250/208.1
• CPC Class Codes: H04N 25/53 Control of the integration time
• CPC Class Codes: H04N 25/575 with a response composed of multiple slopes
• CPC Class Codes: H04N 25/622 by controlling anti-blooming drains
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Abstract

The invention provides a driving method suitable for a solid-state imaging device provided with a blooming prevention structure by which the dynamic range of the solid-state imaging device can be varied suitably. Each pixel section of a solid-state imaging device includes a reset gate for controlling a resetting operation for discharging accumulated charge from a charge accumulation portion of the pixel section. By performing reset gate voltage driving so that the voltage to be applied to the reset gate may vary midway in a charge accumulation period of the pixel section, the overflow level can be raised midway in the charge accumulation period of the pixel section to expand the dynamic range. Or, the voltage to be applied to a transfer gate for controlling a transferring operation of forwarding accumulated charge from a charge accumulation portion into a floating diffusion portion or the voltage to be applied to a bias gate for controlling the potential of a floating gate is varied.

Claims

1. A driving method for a solid-state imaging device provided with a blooming prevention structure for causing charge generated by photoelectric conversion of each pixel section to overflow, comprising the single step of:

performing reset gate voltage driving so that a voltage to be applied to a reset gate of the pixel section for controlling a resetting operation for discharging accumulated charge from a charge accumulation portion of the pixel section is varied midway in a charge accumulation period of the pixel section to vary an overflow level of the pixel section in the charge accumulation period of the pixel section to vary a dynamic range of the solid-state imaging device midway.

2. A driving method for a solid-state imaging device according to claim 1, wherein the reset gate voltage driving is performed such that the voltage to be applied to the reset gate of the pixel section is driven among three values of a first voltage for causing the pixel section to perform a resetting operation, a second voltage for setting the overflow level of the pixel section to a level lower than a level for prevention of blooming and a third voltage for setting the overflow level of the pixel section to the level for prevention of blooming such that, upon starting of a charge accumulation period of the pixel section, the first voltage is applied, and immediately after that, the second voltage is applied, whereafter, midway in the charge accumulation period, the third voltage is applied.

3. A driving method for a solid-state imaging device provided with a blooming prevention structure for causing charge generated by photoelectric conversion of each pixel section to overflow, comprising the single step of:

performing transfer gate voltage driving so that a voltage to be applied to a transfer gate of the pixel section for controlling a transfer operation for transferring accumulated charge from a charge accumulation portion to a floating diffusion portion of the pixel section is varied midway in a charge accumulation period of the pixel section to vary an overflow level midway in the charge accumulation period of the pixel section to vary a dynamic range of the solid-state imaging device midway.

4. A driving method for a solid-state imaging device according to claim 3, wherein the transfer gate voltage driving is performed such that the voltage to be applied to the transfer gate of the pixel section is driven among three values of a first voltage for causing the pixel section to perform a transfer operation, a second voltage for setting the overflow level of the pixel section to a level lower than a level for prevention of blooming and a third voltage for setting the overflow level of the pixel section to the level for prevention of blooming such that, upon starting of a charge accumulation period of the pixel section, the first voltage is applied, and immediately after that, the second voltage is applied, whereafter, midway in the charge accumulation period, the third voltage is applied.

5. A driving method for a solid-state imaging device provided with a blooming prevention structure for causing charge generated by photoelectric conversion of each pixel section to overflow, comprising the single step of:

performing bias gate voltage driving so that a voltage to be applied to a bias gate of the pixel section is varied midway in a charge accumulation period of the pixel section to vary an overflow level of the pixel section midway in the charge accumulation period of the pixel section to vary a dynamic range of the solid-state imaging device.

6. A driving method for a solid-state imaging device according to claim 5, wherein the bias gate voltage driving is performed such that the voltage to be applied to the bias gate of the pixel section is driven between two values of a first voltage for setting the overflow level of the pixel section to a level lower than a level for prevention of blooming and a second voltage for setting the overflow level of the pixel section to the level for prevention of blooming such that, upon starting of a charge accumulation period of the pixel section, the first voltage is applied, and midway in the charge accumulation period, the second voltage is applied.