Semiconductor device having inductor element made of first conductive layer of spiral configuration electrically connected to second conductive layer of insular configuration

• US 6,002,161 A
• Filed: 11/26/1996
• Issued: 12/14/1999
• Est. Priority Date: 12/27/1995
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Yamazaki, Toru
• Primary Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/756,536
• Time in Patent Office: 1,113 Days
• Field of Search: 257/531, 438/381, 336/200
• US Class Current: 257/531
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

The semiconductor device includes an inductor element which includes a first conductive film pattern of a spiral configuration formed on a major face of a semiconductor substrate, and second conductive film patterns of an insular configuration electrically connected only to the first conductive film pattern through contact holes formed in an inter-layer insulation film and extending in an overlapping relationship with the first conductive film pattern.

Claims

1. A semiconductor device, comprising:

an inductor element formed on a semiconductor substrate and including a first conductive film of a spiral configuration, and a second conductive film of an insular configuration.

wherein the insular configuration of said second conductive film includes a plurality of conductive elements that are electrically isolated from one another but are electrically connected to said first conductive film respectively through a plurality of contacts formed in an inter-layer insulation film disposed between the first and second conductive films.

2. A semiconductor device as claimed in claim 1, wherein said second conductive film is disposed between said semiconductor substrate and said first conductive film.

3. A semiconductor device as claimed in claim 1, wherein said first conductive film is disposed between said semiconductor substrate and said second conductive film.

4. A semiconductor device as claimed in claim 3, further comprising a trimming conductive film formed on a same layer as that of said second conductive film, electrically isolated from the conductive elements of said second conductive film, and electrically connected to said first conductive film to a plurality of portions of said trimming conductive film, wherein an inductance value of said inductor element can be adjusted by electrically isolating one or more of said portions of said trimming conductive film from one another.

5. A semiconductor device as claimed in claim 1, wherein a lead wiring formed on a same layer as that of said second conductive film and electrically isolated from the conductive elements of said second conductive film is connected to said first conductive film.

6. A semiconductor device as claimed in claim 1, wherein side walls of a magnetic substance layer are formed on side faces of said first conductive film of the spiral configuration with insulation films interposed therebetween.

7. A semiconductor device as claimed in claim 6, wherein said magnetic substance layer comprises an iron-nickel alloy layer or an iron-nickel-cobalt alloy layer.

8. A semiconductor device as claimed in claim 1, wherein a spiral groove having a planar configuration similar to that of said first conductive film is formed in said semiconductor substrate under said first conductive film and is filled with an insulation film.

9. A semiconductor device as claimed in claim 1, wherein a plurality of grooves are provided along said first conductive film in said semiconductor substrate under said first conductive film and are filled with an insulation film.

10. A semiconductor device as claimed in claim 1, wherein the first conductive film forms a single contiguous conductive path.

11. A semiconductor device as claimed in claim 10, wherein the second conductive film also has a spiral configuration but is non-contiguous.

12. A semiconductor device comprising:

a semiconductor substrate;

an inductor element formed on the semiconductor substrate and including a first conductive film and a second conductive film; and

an insulation layer disposed between the first and second conductive films,

wherein the first conductive film has a spiral configuration and the second conductive film has a plurality of conductive elements that are electrically isolated from one another but are electrically connected to the first conductive film respectively through a plurality of contacts formed in the insulator layer.

13. A semiconductor device as claimed in claim 12, wherein the contacts and the conductive elements of the second conductive film have the same planar configuration.

14. A semiconductor device as claimed in claim 13, wherein the first conductive film is above the second conductive film.

15. A semiconductor device as claimed in claim 13, wherein the first conductive film is below the second conductive film.

16. A semiconductor device as claimed in claim 12, further comprising a trimming conductive film formed on a same layer as that of said second conductive film, electrically isolated from the conductive elements of said second conductive film, and electrically connected to said first conductive film at a plurality of portions of said trimming conductive film, wherein an inductance value of said inductor element can be adjusted by electrically isolating one or more of said portions of said trimming conductive film from one another.

17. A semiconductor device as claimed in claim 12, further comprising a lead wiring formed on a same level as that of the second conductive film, electrically isolated from the conductive elements of the second conductive film, and electrically connected to the first conductive film.

18. A semiconductor device as claimed in claim 17, wherein the lead wiring extends from a central location of the second conductive film and extends outwardly therefrom between the conductive elements of the second conductive film.

19. A semiconductor device as claimed in claim 12, wherein side walls of a magnetic substance layer are formed on side faces of said first conductive film with insulation films interposed therebetween.

20. A semiconductor device as claimed in claim 12, wherein a magnetic substance layer is formed to fill in gaps between side faces of said first conductive film.

21. A semiconductor device as claimed in claim 12, wherein a spiral groove having a planar configuration similar to that of said first conductive film is formed in said semiconductor substrate under said first conductive film and is filled with an insulation film.

22. A semiconductor device as claimed in claim 12, wherein a plurality of grooves are provided along said first conductive film in said semiconductor substrate under said first conductive film and are filled with an insulation film.

23. A semiconductor device as claimed in claim 12, wherein the first conductive film forms a single contiguous conductive path.

24. A semiconductor device as claimed in claim 23, wherein the second conductive film also has a spiral configuration but is non-contiguous.

25. A semiconductor device comprising:

a semiconductor substrate;

an inductor element formed on the semiconductor substrate and including a first conductive film of a contiguous spiral configuration and a second conductive film of a non-contiguous spiral configuration; and

an insulation layer disposed between the first and second conductive films,

wherein non-contiguous elements of the second conductive film are electrically connected to the first conductive film respectively through a plurality of contacts formed in the insulator layer.

26. A semiconductor device as claimed in claim 25, wherein the first conductive film is below and substantially underlies the second conductive film.

27. A semiconductor device as claimed in claim 25, wherein the second conductive film is below and substantially underlies the film conductive film.