Multi-substrate radio-frequency circuit

• US 6,002,375 A
• Filed: 09/02/1997
• Issued: 12/14/1999
• Est. Priority Date: 09/02/1997
• Status: Expired due to Fees

• Current Assignee: General Dynamics Decision Systems, Inc. (General Dynamics Corporation)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Brice-Heames, Kenneth, Cook, Dean Lawrence, Torkington, Richard Scott, Corman, David Warren, Ma, Stephen Chih-Hung
• Primary Examiner(s): Wong, Don
• Assistant Examiner(s): Clinger, James
• Application Number:
  US08/922,057
• Time in Patent Office: 833 Days
• Field of Search: 343/853, 343/861, 330/250, 330/310, 257/723, 257/724, 257/728, 257/750, 333/33, 333/247
• US Class Current: 343/853
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142

Abstract

A radio-frequency circuit (20) includes a hybrid integrated circuit (24) having a passive circuit element (38) and a d-c biasing circuit element (54) embedded within a first substrate (32) of a low cost and rugged first semiconducting material, and first and second active circuit elements (36, 40) embedded within second and third substrates (44, 46), respectively, of a second semiconductor material having the characterisitics of greater frangibility but higher gain than the first semiconductor material. The first and second activ circuit elements (36, 40) are substantially first and second single components (36, 40), and are each electrically coupled to the passive circuit element (38). The d-c biasing circuit element (54) is electrically coupled to the first and second active circuit elements (36, 40). The second and third substrates (44, 46) are physically coupled to the first substrate (32), which is thicker than either the second or third substrate (44, 46).

Claims

1. A radio-frequency (RF) circuit comprising:

a first passive RF matching element fabricated within a first substrate at a first embeddment level the first substrate being selected from the group consisting of silicon, glass. Teflon and aluminia;

an RF amplifier circuit fabricated within a second substrate physically coupled to said first substrate, said RF amplifier circuit being electrically coupled to said first passive RF matching element, the second substrate being selected from the group consisting of gallium arsenide (GaAs), indium phosphide and silicon germanium;

a second passive RF matching element fabricated within said first substrate at said first embeddment level and electrically coupled to said RF amplifier circuit; and

a DC bias circuit fabricated within the first substrate at a second embeddment level, the DC bias circuit for providing DC bias current to the RF amplifier circuit, the second embeddment level being non-coplanar with the first embeddment level.

2. A radio-frequency circuit as claimed in claim 1 wherein the RF amplifier circuit is a first RF amplifier circuit, and wherein the radio frequency circuit further comprises:

a second RF amplifier circuit fabricated within a third substrate physically coupled to said first substrate, said second RF amplifier circuit being electrically coupled to said second passive RF matching element, the third substrate comprising the same material as the second substrate; and

a third passive RF matching element fabricated within said first substrate at said first embeddment level and electrically coupled to said second RF amplifier circuit.

3. A radio-frequency circuit as claimed in claim 2 wherein said second and third substrates are comprised of GaAs and the first substrate is comprised of Silicon.

4. A radio-frequency circuit as claimed in claim 2 further comprising a radiative element electrically coupled to said first passive RF matching element, said radiative element being one of a plurality of radiative elements of an array antenna, and wherein:

said first and second passive RF matching elements, said first and second RF amplifiers and said DC bias circuits are formed together as an integrated circuit; and

said integrated circuit is coupled to said radiative element.

5. A radio-frequency circuit as claimed in claim 3 wherein said first substrate is a carrier for said second and third substrates.

6. A radio-frequency circuit as claimed in claim 5 wherein:

said first substrate is thicker than said second substrate; and

said first substrate is thicker than said third substrate.

7. A radio-frequency circuit as claimed in claim 2 wherein:

said first passive RF matching element is substantially a first impedance-matching circuit for impedance matching to an input of said first RF amplifier circuit;

and wherein said second passive RF matching element is substantially a second impedance matching circuit for impedance matching between an output of said first RF amplifier circuit and an input of said second RF amplifier circuit.

8. A radio-frequency circuit as claimed in claim 4 wherein said second substrate has first and second opposite sides, and wherein said first and third substrates are bonded to said first opposite side, said radio frequency circuit additionally comprising:

a fourth substrate, the fourth substrate being non-conductive, said second opposite side of said second substrate being bonded to said fourth substrate; and

control and power traces formed on said fourth substrate, and

wherein the radiative elements are photolithographically formed upon said fourth substrate.

9. A radio-frequency circuit as claimed in claim 8 further comprising an antenna coupler fabricated within the first substrate at the first embeddment level, said antenna coupler for coupling signals from one of said radiative elements to said first passive RF matching element and to other circuitry embedded in said first substrate.

10. A radio-frequency circuit as claimed in claim 9 wherein:

said integrated circuit is one of a multiplicity of substantially identical integrated circuits; and

each of said multiplicity of integrated circuits is located proximate to and coupled to one of said radiative elements, said radiative elements being spaced at approximately one-half wavelength at a millimeter-wave frequency of operation for said array antenna.

11. A radio-frequency circuit as claimed in claim 2 wherein said second substrate has first and second opposite sides, and wherein said first and third substrates are bonded to said first opposite side, said radio frequency circuit additionally comprising:

a fourth substrate, the fourth substrate being non-conductive, said second opposite side of said second substrate being bonded to said fourth substrate; and

control and power traces formed on said fourth substrate.

12. A radio-frequency circuit as claimed in claim 11 wherein:

the fourth substrate comprises a crystalline Silicon plate.

13. A method of processing a radio-frequency RF signal through a radio-frequency circuit extending over first, second, and third semiconductor substrates, wherein said second and third substrates are physically coupled to said first substrate, said method comprising the steps of:

propagating the RF signal through a first passive RF impedance matching element fabricated within the first substrate at a first embeddment level, the first substrate being selected from the group consisting of silicon, glass, Teflon and aluminia;

amplifying the RF signal with an RF amplifier circuit fabricated within a second substrate physically coupled to said first substrate, said RF amplifier circuit being electrically coupled to said first passive RF matching element, the second substrate being selected from the group consisting of gallium arsenide (GaAs), indium phosphide and silicon germanium;

propagating the RF signal through a second passive RF matching element fabricated within said first substrate at said first embeddment level and electrically coupled to said RF amplifier circuit; and

providing DC bias current to the RF amplifier circuit with a DC bias circuit fabricated within the first substrate at a second embeddment level, the second embeddment level being non-coplanar with the first embeddment level.

14. A method of processing a radio-frequency signal as claimed in claim 13

wherein the RF amplifier circuit is a first RF amplifier circuit, and wherein the method further comprises the steps of:

amplifying said RF signal with a second RF amplifier circuit fabricated within a third substrate physically coupled to said first substrate, said second RF amplifier circuit being electrically coupled to said second passive RF matching element, the third substrate comprising the same material as the second substrate; and

propagating said RF signal in a third passive RF matching element fabricated within said first substrate at said first embeddment level and electrically coupled to said second RF amplifier circuit.

15. A millimeter-wave active radio-frequency antenna array comprising:

a non-conductive plate;

a multiplicity of radiative elements; and

a multiplicity of hybrid radio-frequency (RF) integrated circuits wherein each of said hybrid RF integrated circuits is electrically coupled to one of said radiative elements, each hybrid RF integrated circuit bonded to said non-conductive plate, and wherein each of said hybrid RF integrated circuits comprises;

a first passive RF matching element fabricated within a silicon substrate;

an RF amplifier circuit electrically coupled to said first passive RF matching element, said RF amplifier circuit fabricated within a Gallium Arsenide (GaAs) substrate material, said physically coupled to said silicon substrate;

a second passive RF matching element fabricated within said silicon substrate electrically coupled to said RF amplifier circuit; and

a DC bias circuit fabricated within the silicon substrate for providing DC bias current to the RF amplifier circuit.

16. An active radio-frequency antenna array as claimed in claim 17 wherein:

said first passive RF matching element within each of said hybrid RF integrated circuits is substantially a first impedance-matching circuit for impedance matching to a first port of said RF amplifier circuit;

and wherein said second passive RF matching circuit is substantially a second impedance matching circuit for impedance matching to a second port of said RF amplifier circuit.

17. An active radio-frequency antenna array as claimed in claim 15 wherein:

said first and second passive RF matching elements of each of the hybrid RF integrated circuits is fabricated within the silicon substrate at a first embeddment level; and

the DC bias circuit of each of said hybrid integrated RF circuits is fabricated within said silicon substrate at a second embeddment level, the second embeddment level being non-coplanar with the first embeddment level.

18. An active radio-frequency antenna array as claimed in claim 16 wherein the radiative elements are photolithographically formed upon said non-conductive plate, and wherein the active radio-frequency antenna array further comprises control and power traces for each hybrid RF integrated circuit formed on said non-conductive plate.

19. An active radio-frequency antenna array as claimed in claim 18 wherein the non-conductive plate comprises a crystalline silicon plate.

20. An active radio-frequency antenna array as claimed in claim 18 wherein each of said hybrid RF integrated circuits further comprises an antenna coupler fabricated within the silicon substrate at the first embeddment level, said antenna coupler for coupling signals from one of said radiative elements to said first passive RF matching element and to other circuitry embedded in said silicon substrate.