Giant magnetoresistive sensor

• US 6,002,553 A
• Filed: 02/28/1994
• Issued: 12/14/1999
• Est. Priority Date: 02/28/1994
• Status: Expired due to Fees

• Current Assignee: United States Department of Energy
• Original Assignee: United States Department of Energy
• Inventors: Stearns, Daniel G., Vernon, Stephen P., Ceglio, Natale M., Hawryluk, Andrew M.
• Primary Examiner(s): Tupper, Robert S.
• Application Number:
  US08/202,991
• Time in Patent Office: 2,115 Days
• Field of Search: 324/252, 338/32 R, 360/113
• US Class Current: 360/324
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/09 Digital recording
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: H01F 10/325 the spacer being noble metal
• CPC Class Codes: H01F 10/3281 only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co

Abstract

A magnetoresistive sensor element with a three-dimensional micro-architecture is capable of significantly improved sensitivity and highly localized measurement of magnetic fields. The sensor is formed of a multilayer film of alternately magnetic and nonmagnetic materials. The sensor is optimally operated in a current perpendicular to plane mode. The sensor is useful in magnetic read/write heads, for high density magnetic information storage and retrieval.

Claims

1. A giant magnetoresistive (GMR) sensor, comprising:

a sensor element formed of a plurality of alternating layers of a magnetic material and a nonmagnetic conducting material patterned in a three-dimensional microarchitecture with a length L and a width W and a total thickness B, wherein L≧

W>

B and W is between about 0.1 microns and about 5 microns, and wherein each magnetic layer is a single magnetic domain and the layers of nonmagnetic material have a thickness such that exchange coupling between adjacent magnetic layers is less than magnetostatic coupling;

means for flowing a current through the sensor element and for detecting resistance changes.

2. The sensor of claim 1 wherein each magnetic material layer has a thickness T between about 0.1 nm and about 100 nm and W>

>

T.

3. The sensor of claim 1 wherein the sensor element is substantially asymmetrically shaped.

4. The sensor of claim 1 wherein the sensor element is substantially rectangular.

5. The sensor of claim 1 wherein the number of layers of magnetic and nonmagnetic material is between 3 and 400.

6. The sensor of claim 1 wherein the magnetic layers are formed of iron, cobalt, nickel or a magnetic alloy.

7. The sensor of claim 1 wherein the nonmagnetic layers are formed of copper, gold, silver or other nonmagnetic conductor.

8. The sensor of claim 1 wherein the L/W ratio is between 1 and 50.

9. The sensor of claim 1 further comprising additional layers of another material.

10. The sensor of claim 1 wherein the sensor element has a thickness B between 15 nm and 1000 nm.

11. The sensor of claim 1 wherein the means for flowing current comprise a pair of electrodes on opposed lateral faces of the sensor element to provide current perpendicular to plane (CPP) current flow.

12. The sensor of claim 1 wherein the means for flowing current comprise a pair of electrodes on a single lateral face or on opposed edge faces of the sensor element to provide current in plane (CIP) current flow.

13. The sensor of claim 4 wherein W is between 0.25 microns and 2 microns, and the sensor element has a thickness between 15 nm and 100 nm.

14. A giant magnetoresistive (GMR) sensor, comprising:

a sensor element formed of a plurality of alternating layers of a magnetic material and a nonmagnetic material patterned in a three-dimensional microarchitecture with a length L and a width W and a total thickness B, wherein L≧

W>

B and W is between about 0.1 microns and about 5 microns, and wherein each magnetic layer is a single magnetic domain and the layers of nonmagnetic material have a thickness such that exchange coupling between adjacent magnetic layers is less than magnetostatic coupling;

conductive layers formed on a pair of opposed lateral faces of the sensor element for flowing a current through the sensor element in a current perpendicular to plane (CPP) mode and for detecting resistance changes.

15. The sensor of claim 14 wherein the sensor element is substantially rectangular shaped.

16. The sensor of claim 15 wherein W is between 0.25 microns and 2 microns, and the sensor element has a thickness between 15 nm and 100 nm.

17. The sensor of claim 14 wherein the conductive layers on opposed lateral faces of the sensor element are magnetic shields for the sensor element.

18. The sensor of claim 14 wherein the magnetic layers are formed of iron, cobalt, nickel or a magnetic alloy.

19. The sensor of claim 14 wherein the nonmagnetic layers are formed of copper, gold, silver or other nonmagnetic conductor.