Multi-axial accelerometer-based sensor for an implantable medical device and method of measuring motion measurements therefor

• US 6,002,963 A
• Filed: 02/17/1995
• Issued: 12/14/1999
• Est. Priority Date: 02/17/1995
• Status: Expired due to Term

• Current Assignee: Pacesetter Incorporated (Abbott Laboratories Incorporated)
• Original Assignee: Pacesetter Incorporated (Abbott Laboratories Incorporated)
• Inventors: Moberg, Sheldon B., Causey, James D. III, Mouchawar, Gabriel
• Primary Examiner(s): Kamm, William E.
• Application Number:
  US08/390,738
• Time in Patent Office: 1,761 Days
• Field of Search: 607/17, 607/18, 607/19, 607/21, 607/22, 607/24
• US Class Current: 607/18
• CPC Class Codes: A61N 1/36542 controlled by body motion, e.g. acceleration

Abstract

An improved sensor and related method for multi-axial measurement of motion for an implantable medical device is disclosed. The sensor has a wide variety of applications, including use as a cardiac wall motion sensor or a physical activity sensor. The sensor includes first and second conductors over which the motion measurements are made. A first transducer provides a first motion measurement indicative of sensor acceleration during a first phase, while a second transducer provides a second motion measurement indicative of sensor acceleration during a second phase. The first and second transducers are connected in parallel so as to provide the first and second motion measurements to an implantable medical device over the first and second conductors. The first and second phases are non-overlapping periods of time so that the motion measurements from each transducer are time division multiplexed. The sensor provides motion measurements that may either be compensated or uncompensated for temperature effects. In either case, the motion sensor uses fewer conductors than conventional sensors to deliver its measurements.

Claims

1. A two-conductor multiplexed motion sensor for use with an implantable medical device, wherein the implantable medical device includes circuitry for monitoring or stimulating cardiac activity, the sensor comprising:

a first conductor;

a second conductor;

a first transducing circuit for providing a first motion measurement indicative of sensor acceleration during a first phase, wherein the first transducing circuit provides the first motion measurement to the implantable medical device over the first and second conductors; and

a second transducing circuit for providing a second motion measurement indicative of sensor acceleration during a second phase, wherein the second transducing circuit is connected in parallel to the first transducing circuit so as to provide the second motion measurement to the implantable medical device over the first and second conductors,

wherein the first and second phases are nonoverlapping periods of time.

2. The sensor of claim 1, wherein the sensor is a cardiac wall motion sensor.

3. The sensor of claim 2, wherein the sensor is mounted in a lead of the implantable medical device, the lead being in contact with a cardiac wall.

4. The sensor of claim 2, wherein the first and second transducer circuits are positioned noncoaxially so that the sensor is sensitive to cardiac wall acceleration along a plurality of axes.

5. The sensor of claim 1, wherein the sensor is a physical activity sensor.

6. The sensor of claim 5, wherein the physical activity sensor is mounted to the implantable medical device to detect acceleration of a body in which the device is implanted.

7. The sensor of claim 6, wherein the first and second transducer circuits are positioned orthogonally so that the physical activity sensor is a multi-axial sensor for detecting up-down body acceleration along a vertical axis and left-right body acceleration along a lateral axis.

8. The sensor of claim 1, wherein:

over the first and second conductors, the first and second transducing circuits receive an excitation signal having a first polarity during the first phase and a second polarity opposite the first polarity during the second phase;

in response to the excitation signal being in the first polarity, the first transducing circuit conducts in a first direction and the second transducing circuit does not conduct;

in response to the excitation signal being in the second polarity, the second transducing circuit conducts in a second direction opposite the first direction and the first transducing circuit does not conduct; and

the first and second motion measurements are respectively provided to the implantable medical device when the first and second transducing circuits conduct.

9. The sensor of claim 8, wherein:

the first transducing circuit includes a first piezoresistive material in series with a first diode, and the first diode is positioned to conduct in the first direction during the first phase;

the second transducing circuit includes a second piezoresistive material in series with a second diode, and the second diode is positioned to conduct in the second direction during the second phase;

the piezoresistive materials vary their respective resistances in response to sensor acceleration;

the first motion measurement is the resistance of the first piezoresistive material determined when the first transducing circuit conducts, and the second motion measurement is the resistance of the second piezoresistive material determined when the second transducing circuit conducts.

10. The sensor of claim 8, each transducing circuit comprising a piezoresistive half bridge, each half bridge including:

a first leg having a first piezoresistive material;

a second leg having a second piezoresistive material, wherein

the piezoresistive materials vary their respective resistances in response to sensor acceleration;

the first leg conducts when a voltage magnitude of the excitation signal exceeds a first voltage magnitude level to thereby permit the resistance of the first piezoresistive material to be determined,

the first and second legs conduct when the voltage magnitude of the excitation signal exceeds a second voltage magnitude level greater than the first voltage magnitude level to thereby permit the resistance of the second piezoresistive material to be determined;

the first motion measurement is the difference in the resistances of the first and second piezoresistive materials in the first transducing circuit determined when the first transducing circuit conducts, and

the second motion measurement is the difference in the resistances of the first and second piezoresistive materials in the second transducing circuit determined when the second transducing circuit conducts.

11. A two-conductor multiplexed motion sensor for use with an implantable medical device, wherein the implantable medical device includes circuitry for monitoring or stimulating cardiac activity, the sensor comprising:

a first conductor;

a second conductor;

a first transducing circuit including transducing material having an electrical characteristic that varies measurably when the material is subjected to mechanical stress, the first transducing circuit for providing a first motion measurement indicative of sensor acceleration during a first phase, wherein the first transducing circuit provides the first motion measurement to the implantable medical device over the first and second conductors;

a second transducing circuit including the transducing material for providing a second motion measurement indicative of sensor acceleration during a second phase, wherein the second transducing circuit is connected in parallel to the first transducing circuit so as to provide the second motion measurement to the implantable medical device over the first and second conductors, wherein the first and second phases are nonoverlapping periods of time;

at least one base member;

at least one mass;

at least one cantilever beam having a fixed end that is fixed to a corresponding base member, and a free end upon which is disposed a corresponding mass, wherein the transducing material is disposed on the at least one beam for providing a beam measurement indicative of acceleration experienced by the beam as the beam deflects.

12. The sensor of claim 11, wherein:

a first cantilever beam is positioned noncoaxially with respect to a second cantilever beam so that the corresponding beam measurements are respectively the first and second motion measurements and are indicative of sensor acceleration along a plurality of axes.

13. The sensor of claim 12, wherein a first mass is symmetrically disposed about a planar surface of the first beam and a second mass is symmetrically disposed about a planar surface of the second beam, so that the first transducing circuit is sensitive to acceleration along a first axis perpendicular to the planar surface of the first beam and the second transducing circuit is sensitive to acceleration along a second axis perpendicular to the planar surface of the second beam, and the first and second axes are orthogonal so that the first and second motion measurements are respectively indicative of acceleration along the first and second axes.

14. The sensor of claim 12, wherein a first mass is asymmetrically disposed about a planar surface of the first beam and a second mass is asymmetrically disposed about a planar surface of the second beam, so that the first transducing circuit is sensitive to acceleration along axes perpendicular to and coaxial with the planar surface of the first beam and the second transducing circuit is sensitive to acceleration along axes perpendicular to and coaxial with the planar surface of the second beam, and the first and second beams are positioned with respect to each other so that the first and second motion measurements are together indicative of acceleration along three orthogonal axes.

15. The sensor of claim 11, wherein:

over the first and second conductors, the first and second transducing circuits receive an excitation signal having a first polarity during the first phase and a second polarity opposite the first polarity during the second phase;

in response to the excitation signal being in the first polarity, the first transducing circuit conducts in a first direction and the second transducing circuit does not conduct;

in response to the excitation signal being in the second polarity, the second transducing circuit conducts in a second direction opposite the first direction and the first transducing circuit does not conduct; and

the first and second motion measurements are provided to the implantable medical device when the respective first and second transducing circuits conduct.

16. The sensor of claim 15, the transducing material comprising a first piezoresistive material and a second piezoresistive material disposed on opposite planar surfaces of a first beam, wherein:

the first transducing circuit includes the first piezoresistive material in series with a first diode, and the first diode is positioned to conduct in the first direction during the first phase;

the second transducing circuit includes the second piezoresistive material in series with a second diode, and the second diode is positioned to conduct in the second direction during the second phase;

the piezoresistive materials vary their respective resistances in response to sensor acceleration; and

the first motion measurement is the resistance of the first piezoresistive material determined when the first transducing circuit conducts, and the second motion measurement is the resistance of the second piezoresistive material determined when the second transducing circuit conducts, the difference in the first and second motion measurements providing a temperature-compensated motion measurement to the implantable medical device.

17. The sensor of claim 15, the transducing material comprising a first piezoresistive material disposed on a planar surface of a first beam and a second piezoresistive material disposed on a planar surface of a second beam, wherein

the first transducing circuit includes the first piezoresistive material in series with a first diode, and the first diode is positioned to conduct in the first direction during the first phase;

the second transducing circuit includes the second piezoresistive material in series with a second diode, and the second diode is positioned to conduct in the second direction during the second phase;

the piezoresistive materials vary their respective resistances in response to sensor acceleration; and

the first motion measurement is the resistance of the first piezoresistive material determined when the first transducing circuit conducts, and the second motion measurement is the resistance of the second piezoresistive material determined when the second transducing circuit conducts.

18. The sensor of claim 15, the transducing material comprising piezoresistive material that varies its resistance in response to sensor acceleration, each transducing circuit comprising a piezoresistive half bridge, each half bridge including:

a first leg having a first piezoresistive material disposed on a first planar surface of a corresponding cantilever beam;

a second leg having a second piezoresistive material disposed on a second planar surface opposite the first planar surface of the corresponding cantilever beam, wherein

the first leg conducts when a voltage magnitude of the excitation signal exceeds a first voltage magnitude level to thereby permit the resistance of the first piezoresistive material to be determined, the first and second legs conduct when the voltage magnitude of the excitation signal exceeds a second voltage magnitude level greater than the first voltage magnitude level to thereby permit the resistance of the second piezoresistive material to be determined,

the first motion measurement is the difference in the resistances of the first and second piezoresistive materials in the first transducing circuit determined when the first transducing circuit conducts, and

the second motion measurement is the difference in the resistances of the first and second piezoresistive materials in the second transducing circuit determined when the second transducing circuit conducts, whereby the first and second motion measurements are each temperature-compensated motion measurements provided to the implantable medical device.

19. In an implantable medical device including a motion sensor and circuitry for monitoring or stimulating cardiac activity, a method for providing motion measurements from the sensor to the implantable medical device, the method comprising:

providing a first motion measurement indicative of sensor acceleration to the implantable medical device during a first phase, wherein the first motion measurement is provided over first and second conductors from a first transducing circuit in the sensor;

providing a second motion measurement indicative of sensor acceleration to the implantable medical device during a second phase, wherein the second motion measurement is provided over the first and second conductors from a second transducing circuit in the sensor, the second transducing circuit being connected in parallel to the first transducing circuit,

wherein the first and second phases are nonoverlapping periods of time.

20. The method of claim 19 further comprising the steps of:

over the first and second conductors, exciting the first and second transducing circuits with an excitation signal having a first polarity during the first phase and a second polarity opposite the first polarity during the second phase;

in response to the excitation signal being in the first polarity, the first transducing circuit conducting in a first direction and the second transducing circuit not conducting; and

in response to the excitation signal being in the second polarity, the second transducing circuit conducting in a second direction opposite the first direction and the first transducing circuit not conducting, wherein

the first and second motion measurements are respectively provided to the implantable medical device when the first and second transducing circuits conduct.

21. The method of claim 20, wherein:

the first transducing circuit includes a first piezoresistive material in series with a first diode, and the first diode is positioned to conduct in the first direction during the first phase;

the second transducing circuit includes a second piezoresistive material in series with a second diode, and the second diode is positioned to conduct in the second direction during the second phase;

the piezoresistive materials vary their respective resistances in response to sensor acceleration;

the method further comprising the steps of;

determining the resistance of the first piezoresistive material when the first transducing circuit conducts, wherein the resistance determined during the first phase is the first motion measurement; and

determining the resistance of the second piezoresistive material when the second transducing circuit conducts, wherein the resistance determined during the second phase is the second motion measurement.

22. The method of claim 20, each transducing circuit comprising a piezoresistive half bridge, each half bridge including:

a first leg having a first piezoresistive material;

a second leg having a second piezoresistive material, wherein

the first leg conducts when a voltage magnitude of the excitation signal exceeds a first voltage magnitude level to thereby permit the resistance of the first piezoresistive material to be determined,

the first and second legs conduct when the voltage magnitude of the excitation signal exceeds a second voltage magnitude level greater than the first voltage magnitude level to thereby permit the resistance of the second piezoresistive material to be determined, wherein

the piezoresistive materials vary their respective resistances in response to sensor acceleration;

the method further comprising the steps of;

determining the difference in the resistances of the first and second piezoresistive materials in the first transducing circuit when the first transducing circuit conducts, wherein the difference determined during the first phase is the first motion measurement, and

determining the difference in the resistances of the first and second piezoresistive materials in the second transducing circuit when the second transducing circuit conducts, wherein the difference determined during the second phase is the second motion measurement.

23. The method of claim 20, wherein

each transducing circuit further comprises a transducing material having an electrical characteristic that varies measurably when the material is subjected to mechanical stress;

and

the sensor further comprises;

at least one base member;

at least one mass;

at least one cantilever beam having a fixed end that is fixed to a corresponding base member, and a free end upon which is disposed a corresponding mass, wherein the transducing material is disposed on the at least one beam for providing a beam measurement indicative of acceleration experienced by the beam as the beam deflects.

24. The method of claim 23, the transducing material comprising a first piezoresistive material and a second piezoresistive material disposed on opposite planar surfaces of a first beam, wherein:

the first transducing circuit includes the first piezoresistive material in series with a first diode, and the first diode is positioned to conduct in the first direction during the first phase;

the second transducing circuit includes the second piezoresistive material in series with a second diode, and the second diode is positioned to conduct in the second direction during the second phase;

the piezoresistive materials vary their respective resistances in response to sensor acceleration;

the method further comprising the steps of;

determining the resistance of the first piezoresistive material when the first transducing circuit conducts;

determining the resistance of the second piezoresistive material when the second transducing circuit conducts; and

subtracting the resistance of the second piezoresistive material from the resistance of the first piezoresistive material to thereby provide a temperature-compensated motion measurement to the implantable medical device.

25. The method of claim 23, the transducing material comprising a first piezoresistive material disposed on a planar surface of a first beam and a second piezoresistive material disposed on a planar surface of a second beam, wherein:

the first transducing circuit includes the first piezoresistive material in series with a first diode, and the first diode is positioned to conduct in the first direction during the first phase;

the second transducing circuit includes the second piezoresistive material in series with a second diode, and the second diode is positioned to conduct in the second direction during the second phase;

the piezoresistive materials vary their respective resistances in response to sensor acceleration;

the method further comprising the steps of;

determining the resistance of the first piezoresistive material when the first transducing circuit conducts, wherein the resistance determined during the first phase is the first motion measurement; and

determining the resistance of the second piezoresistive material when the second transducing circuit conducts, wherein the resistance determined during the second phase is the second motion measurement.

26. The method of claim 23, the transducing material comprising piezoresistive material that varies its resistance in response to sensor acceleration, each transducing circuit comprising a piezoresistive half bridge, each half bridge including:

a first leg having a first piezoresistive material;

a second leg having a second piezoresistive material, wherein

the first leg conducts when a voltage magnitude of the excitation signal exceeds a first voltage magnitude level to thereby permit the resistance of the first piezoresistive material to be determined,

the first and second legs conduct when the voltage magnitude of the excitation signal exceeds a second voltage magnitude level greater than the first voltage magnitude level to thereby permit the resistance of the second piezoresistive material to be determined,

the method further comprising the steps of;

determining the difference in the resistances of the first and second piezoresistive materials in the first transducing circuit when the first transducing circuit conducts, wherein the difference determined during the first phase is the first motion measurement, and

determining the difference in the resistances of the first and second piezoresistive materials in the second transducing circuit when the second transducing circuit conducts, wherein the difference determined during the second phase is the second motion measurement,

whereby the first and second motion measurements are each temperature-compensated motion measurements provided to the implantable medical device.