Method of and apparatus for processing photoresist, method of evaluating photoresist film, and processing apparatus using the evaluation method

• US 6,004,047 A
• Filed: 03/04/1998
• Issued: 12/21/1999
• Est. Priority Date: 03/05/1997
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Yoshihara, Kosuke, Fukuda, Yuji, Akimoto, Masami
• Primary Examiner(s): Rutledge, D.
• Application Number:
  US09/034,335
• Time in Patent Office: 657 Days
• Field of Search: 396/604, 396/611, 396/627, 118/52, 118/666, 118/712, 118/665, 427/335, 427/385.5
• US Class Current: 396/604
• CPC Class Codes: G03F 7/162 Coating on a rotating support, e.g. using a whirler or a spinner
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

A resist processing method includes setting a substrate at a specific temperature, forming a resist film on the substrate by applying a resist solution onto the substrate while turning the substrate set at the specific temperature, heating the substrate on which the resist film has been formed, cooling the substrate a specific temperature after the heating process, wherein the thickness of the resist film on the substrate is measured between the heating process and the cooling process.

Claims

1. A resist processing method in a resist processing system, comprising:

a first step of setting a substrate at a specific temperature;

a second step of forming a resist film on said substrate by applying a resist solution onto said substrate while turning said substrate set at the specific temperature;

a third step of heating said substrate on which said resist film has been formed;

a fourth step of cooling said heated substrate to a specific temperature; and

a step of measuring the thickness of said resist film on said substrate between said third step and said fourth step in the resist processing system.

2. A resist processing method according to claim 1, further comprising the step of adjusting, on the basis of the result of measuring the thickness of said resist film, the humidity in a resist coating unit of said resist processing system, the rotational speed of said substrate in the resist coating unit, and at least one of the temperature of said substrate and the temperature of said resist solution in the first step.

3. A resist processing method according to claim 2, wherein said adjusting step is performed when the measured thickness of said resist film is larger than the upper limit of a permitted range in a first place on said substrate and is smaller than the lower limit of the permitted range in a second place on said substrate.

4. A resist processing method according to claim 2, wherein said film thickness measuring step is performed while a transfer mechanism in said resist processing system is holding said substrate in place.

5. A resist processing method according to claim 2, wherein said film thickness measuring step is performed on a test substrate provided in said resist processing system.

6. A resist processing method according to claim 1, wherein said film thickness measuring step is performed while the transfer mechanism in said resist processing system is holding said substrate in place.

7. A resist processing method according to claim 1, wherein said film thickness measuring step is performed on a test substrate provided in said resist processing system.

8. A resist processing method in a resist processing system, comprising:

a first step of heating a substrate to a first temperature;

a second step of forming a resist film on said substrate by applying a resist solution onto said substrate while turning said substrate set at the first temperature;

a third step of heating said substrate on which said resist film has been formed;

a fourth step of cooling said heated substrate to a second temperature; and

a step of measuring the thickness of said resist film on said substrate after said fourth step in the resist processing system.

9. A resist processing method according to claim 8, further comprising the step of adjusting, on the basis of the result of measuring the thickness of said resist film, the humidity in a resist coating unit of said resist processing system, the rotational speed of said substrate in the resist coating unit, and at least one of the first temperature of said substrate and the temperature of said resist solution in the first step.

10. A resist processing method according to claim 9, wherein said adjusting step is performed when the measured thickness of said resist film is larger than the upper limit of a permitted range in a first place on said substrate and is smaller than the lower limit of the permitted range in a second place on said substrate.

11. A resist processing method according to claim 8, wherein said film thickness measuring step is performed while a transfer mechanism in said resist processing system is holding said substrate in place.

12. A resist processing method according to claim 8, wherein said film thickness measuring step is performed on a test substrate provided in said resist processing system.

13. A resist processing method according to claim 12, further comprising the step of washing out, in the resist coating unit, the resist film on the test substrate whose film thickness has been measured, to reuse it.

14. A resist processing system comprising:

a resist coating unit for forming a resist film on a substrate by applying a resist solution onto the substrate while turning the substrate;

a heating unit for heating said substrate;

a transfer mechanism for holding and transferring said substrate; and

a film thickness measuring instrument provided above a load/unload slot of said heating unit to measure the thickness of the resist film formed on said substrate.

15. A resist processing system comprising:

a resist coating unit for forming a resist film on a substrate by applying a resist solution onto the substrate while turning the substrate;

a heating unit for heating said substrate to a first temperature;

a temperature adjusting unit having the function of cooling at least said substrate to a second temperature;

a transfer mechanism for holding and transferring said substrate; and

a film thickness measuring instrument which is provided above load/unload slots of at least either said heating unit or said temperature adjusting unit, said heating unit and said temperature adjusting unit being laid one on top of another, and which measures the thickness of the resist film formed on said substrate.

16. A resist processing system comprising:

a resist coating unit for forming a resist film on a substrate by applying a resist solution onto the substrate while turning the substrate;

a heating unit for heating said substrate to a first temperature

a transfer mechanism for holding and transferring said substrate; and

a film thickness measuring instrument provided above a transfer path of said transfer mechanism to measure the thickness of the resist film formed on said substrate.

17. A film thickness evaluation method comprising the steps of:

storing data on the variation of the thickness of a chemically amplified resist film formed on a substrate with elapsed time;

measuring the thickness of the chemically amplified resist film formed on said substrate; and

correcting the value of said measured film thickness on the basis of said stored data.

18. A film thickness evaluation method according to claim 17, further comprising a step of giving an alarm when said corrected film thickness is outside a permitted range.

19. A film thickness evaluation method according to claim 17, further comprising a step of compensating for said stored data on the basis of the value of said measured film thickness.

20. A processing apparatus comprising:

means for forming a chemically amplified resist film on a substrate;

means for storing data on the variation of the thickness of the chemically amplified resist film formed on said substrate with elapsed time;

means for measuring the thickness of the chemically amplified resist film formed on said substrate; and

means for correcting the value of said measured film thickness on the basis of said stored data, wherein these means are integrated into a single structure.

21. A processing apparatus according to claim 20, further comprising means for determining whether or not said corrected film thickness is outside a predetermined permitted range and means for giving an alarm when said corrected film thickness is outside said permitted range.

22. A processing apparatus according to claim 20, further comprising means for compensating for said stored data on the basis of the value of said measured film thickness.