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Process for forming a porous silicon member in a crystalline silicon member

  • US 6,004,450 A
  • Filed: 09/30/1998
  • Issued: 12/21/1999
  • Est. Priority Date: 02/27/1997
  • Status: Expired due to Fees
First Claim
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1. A process for forming a porous silicon membrane in a crystalline silicon member, comprising:

  • masking at least a section of the silicon member,patterning an open area in the masked silicon member to expose the crystalline there under;

    electrochemical etching of the exposed crystalline silicon to form pores therein for forming the porous silicon membrane; and

    forming a means in the crystalline member selected from the group consisting of heater means and electrode means.

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