Flip-chip bonded VCSEL CMOS circuit with silicon monitor detector

• US 6,005,262 A
• Filed: 01/27/1998
• Issued: 12/21/1999
• Est. Priority Date: 08/20/1997
• Status: Expired due to Term

• Current Assignee: Hanger Solutions, LLC (IP Investments Group LLC)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Cunningham, John, Krishnamoorthy, Ashok, Goossen, Keith
• Primary Examiner(s): Clark, Sheila V.
• Application Number:
  US09/014,196
• Time in Patent Office: 693 Days
• Field of Search: 257/84, 257/80, 257/98, 257/435, 257/778, 257/659
• US Class Current: 257/84
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01S 5/02325 Mechanically integrated components on mount members or optical micro-benches
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

A flip-chip bonded VCSEL CMOS circuit for preventing rearwardly emitted photons from the VCSEL from interfering with CMOS operation. The CMOS has bonding pads affixed thereto and spaced apart to define a region. The VCSEL is mounted to the bonding pads so that a lower mirror of the VCSEL is positioned between the bonding pads and in close proximity to an upper, major surface of the CMOS. A blocking layer is provided and is positioned within the region defined by the bonding pads to absorb or reflect rearwardly emitted photons from the VCSEL. In another embodiment, the blocking layer is removed and a photon detector is formed in the CMOS for collecting the rearwardly emitted photons for use in determining, inter alia, VCSEL laser power.

Claims

1. A flip-chip bonded VCSEL CMOS circuit for safeguarding a CMOS device from rearwardly emitted light, generated by a VCSEL associated with the circuit, said circuit comprising:

a substrate;

a CMOS device formed on said substrate and having a major surface, said CMOS device including a plurality of transistors having gate terminals, and a bonding pad formed on said major surface;

an associated VCSEL having an upper mirror remote from the bonding pad for transmitting forwardly emitted light, and a lower mirror proximate said bonding pad for passing rearwardly emitted light, said VCSEL being mounted to said bonding pad and in electrical communication with said CMOS; and

means on one of said major surface and said substrate for preventing a substantial portion of rearwardly emitted light generated by said VCSEL from impinging on the gate terminals and interfering with current flow of said transistors.

2. The circuit of claim 1, wherein said preventing means comprises a blocking layer formed on said major surface.

3. The circuit of claim 2, wherein said blocking layer absorbs a substantial portion of the rearwardly emitted light from said VCSEL.

4. The circuit of claim 2, wherein said blocking layer is comprised of aluminum.

5. The circuit of claim 2, wherein said blocking layer reflects rearwardly emitted light from said VCSEL.

6. The circuit of claim 5, wherein said blocking layer comprises one of silicon monoxide, calcium fluoride and zinc sulfide.

7. The circuit of claim 1, wherein said substrate is comprised of silicon.

8. The circuit of claim 1, wherein said VCSEL has a bonding pad which is mounted to said CMOS bonding pad.

9. The circuit of claim 8, wherein said CMOS bonding pad comprises a pair of bonding pads and wherein said VCSEL bonding pad comprises a pair of bonding pads.

10. The circuit of claim 1, wherein said preventing means comprises a detector formed on said substrate for detecting a substantial portion of rearwardly emitted light from said VCSEL.

11. The circuit of claim 10, further comprising an anti-reflective coating positioned above said detector for preventing rearwardly emitted light from re-entering said VCSEL through said lower mirror.

12. The circuit of claim 11, wherein said anti-reflection coating comprises aluminum.

13. The circuit of claim 10, wherein said substrate is comprised of silicon.

14. The circuit of claim 10, wherein said detector generates a signal indicative of a laser power of said VCSEL.

15. A flip-chip bonded VCSEL CMOS circuit for safeguarding a CMOS device from rearwardly emitted light, generated by a VCSEL associated with the circuit, said circuit comprising:

a substrate;

a CMOS device formed on said substrate and having a major surface, said CMOS device including a plurality of transistors having gate terminals, and a bonding pad formed on said major surface;

an associated VCSEL having an upper mirror remote from the bonding pad for transmitting forwardly emitted light, and a lower mirror proximate said bonding pad for passing rearwardly emitted light, said VCSEL being mounted to said bonding pad and in electrical communication with said CMOS; and

a detector formed on said substrate for detecting a substantial portion of rearwardly emitted light from said VCSEL.

16. The circuit of claim 15, wherein said bonding pad comprises a pair of bonding pads spaced apart from each other to form a region, and wherein said detector is partially aligned with said region.

17. The circuit of claim 15, further comprising an anti-reflective coating positioned above said detector for preventing rearwardly emitted light from re-entering said VCSEL through said lower mirror.

18. The circuit of claim 17, wherein said anti-reflection coating comprises aluminum.

19. The circuit of claim 15, wherein said substrate is comprised of silicon.

20. The circuit of claim 15, wherein said detector generates a signal indicative of a laser power of said VCSEL.