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Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors

  • US 6,005,273 A
  • Filed: 12/10/1997
  • Issued: 12/21/1999
  • Est. Priority Date: 10/31/1996
  • Status: Expired due to Term
First Claim
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1. A transistor structure comprising:

  • a gate structure formed on a first oxide layer on a semiconductor structure;

    a secondary oxide layer formed on said gate structure;

    a conductive spacer formed around said gate structure on said secondary oxide layer, said conductive spacer including an aperture over a portion of said gate structure;

    a first contact to said gate structure by way of said aperture; and

    a second contact to said conductive spacer.

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