Semiconductor device and its manufacturing method
First Claim
1. A semiconductor device comprising:
- a common semiconductor substrate;
an npn transistor having a base outlet electrode formed of a first polycrystalline silicon film and at least one other device having at least one electrode formed of a second polycrystalline silicon film, wherein;
said first polycrystalline silicon film forming the base outlet electrode of said npn transistor has a sheet resistance not larger than two thirds of the sheet resistance of said second polycrystalline film forming said other device electrode.
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Accused Products
Abstract
A bipolar semiconductor device includes an npn transistor using a base outlet electrode in the form of a polycrystalline Si film and one or more other devices using an electrode in the form of a polycrystalline Si film supported on a common p-type Si substrate, the sheet resistance of the polycrystalline Si film forming the base outlet electrode of the npn transistor is decreased to two thirds of the sheet resistance of the polycrystalline Si film forming at least one electrode of at least one other device. The base outlet electrode can be made by first making the polycrystalline Si film on the entire surface of the substrate, then applying selective ion implantation of Si to a selective portion of the polycrystalline Si film for making the base outlet electrode to change it into an amorphous state, and then annealing the product to grow the polycrystalline Si film by solid-phase growth.
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Citations
14 Claims
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1. A semiconductor device comprising:
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a common semiconductor substrate; an npn transistor having a base outlet electrode formed of a first polycrystalline silicon film and at least one other device having at least one electrode formed of a second polycrystalline silicon film, wherein; said first polycrystalline silicon film forming the base outlet electrode of said npn transistor has a sheet resistance not larger than two thirds of the sheet resistance of said second polycrystalline film forming said other device electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification