Latch-up prevention for memory cells

• US 6,005,797 A
• Filed: 03/20/1998
• Issued: 12/21/1999
• Est. Priority Date: 03/20/1998
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Porter, John D., Thompson, William N.
• Primary Examiner(s): MAI, SON LUU
• Application Number:
  US09/045,465
• Time in Patent Office: 641 Days
• Field of Search: 365/154, 365/156, 257/369, 257/372, 257/377, 257/370, 257/371
• US Class Current: 365/156
• CPC Class Codes: G11C 11/412 using field-effect transistors only
• CPC Class Codes: H10B 10/12 comprising a MOSFET load element

Abstract

An SRAM memory cell is provided having a pair of cross-coupled CMOS inverters. The sources of the pull-up transistors forming each of the CMOS inverters are coupled to V_cc through parasitic resistance of the substrate in which each is formed. The source of the p-type pull-up transistor is therefore always at a potential less than or equal to the potential of the N-well such that the emitter-base junction of the parasitic PNP transistor cannot become forward biased and latch-up cannot occur.

Claims

1. An SRAM memory cell comprising:

a substrate assembly having at least one semiconductor layer;

a first semiconductor structure formed within said at least one semiconductor layer, said first semiconductor structure being coupled to a first voltage input through a first contact formed within said semiconductor structure;

a first pull-up transistor formed in said first semiconductor structure, said first pull-up transistor comprising a first gate, a first source and a first drain, wherein

said first source is coupled to said first semiconductor structure through a second contact formed within the semiconductor structure so as to couple said first source to said first voltage input through a combined parasitic resistance of said semiconductor structure,

said first source of said first pull-up transistor, said first semiconductor structure, and said semiconductor layer are further configured to form a first parasitic bi-polar transistor including a base,

said base of said first bi-polar transistor is coupled to said second contact through a first component of said combined parasitic resistance and to said first contact through a second component of said combined parasitic resistance, and

said first pull-up transistor is arranged such that said first drain is positioned between said first source and said second contact along a surface of said semiconductor structure such that said second component of said combined parasitic resistance is substantially less than said combined parasitic resistance; and

a first pull-down transistor formed in said at least one semiconductor layer, said first pull-down transistor comprising a second gate coupled to said first gate, a second source coupled to a second voltage input, and a second drain coupled to said first drain.

2. The memory cell of claim 1, further comprising an access transistor formed in said at least one semiconductor layer having one terminal coupled to said first and second drains, another terminal coupled to a column line and an access gate coupled to a row line.

3. The memory cell of claim 1, wherein said at least one semiconductor layer comprises P-type semiconductor material, and wherein said semiconductor structure comprises an N-type well.

4. An SRAM memory cell comprising:

a substrate assembly having at least one semiconductor layer;

a first semiconductor structure and a second semiconductor structure formed within said at least one semiconductor layer, said first and second semiconductor structures being coupled to a first voltage input through respective first and third contacts formed within said first and second semiconductor structures;

a first pull-up transistor formed in said first semiconductor structure, said first pull-up transistor comprising a first gate, a first source and a first drain, wherein

said first source is coupled to said first semiconductor structure through a second contact formed within said first semiconductor structure so as to couple said first source to said first voltage input through a first combined parasitic resistance of said first semiconductor structure,

said first source of said first pull-up transistor, said first semiconductor structure, and said semiconductor layer are further configured to form a first parasitic bi-polar transistor including a base,

said base of said first bi-polar transistor is coupled to said second contact through a first component of said combined parasitic resistance and to said first contact through a second component of said combined parasitic resistance, and

said first pull-up transistor is arranged such that said first drain is positioned between said first source and said second contact along a surface of said semiconductor structure such that said second component of said combined parasitic resistance is substantially less than said combined parasitic resistance;

a first pull-down transistor formed in said at least one semiconductor layer, said first pull-down transistor comprising a second gate coupled to said first gate, a second source coupled to a second voltage input, and a second drain coupled to said first drain;

a second pull-up transistor formed in said second semiconductor structure, said second pull-up transistor comprising a third gate, a third source and a third drain, wherein

said third source is coupled to said second semiconductor structure through a fourth contact formed within said second semiconductor structure so as to couple said third source to said first voltage input through a second combined parasitic resistance of said second semiconductor structure,

said third source of said second pull-up transistor, said second semiconductor structure, and said semiconductor layer are further configured to form an additional first parasitic bi-polar transistor including a base,

said base of said additional bi-polar transistor is coupled to said fourth contact through a first component of said second combined parasitic resistance and to said third contact through a second component of said second combined parasitic resistance, and

said second pull-up transistor is arranged such that said third drain is positioned between said third source and said fourth contact along a surface of said second semiconductor structure such that said second component of said second combined parasitic resistance is substantially less than said second combined parasitic resistance; and

a second pull-down transistor formed in said at least one semiconductor layer, said second pull-down transistor comprising a fourth gate coupled to said third gate, a fourth source coupled to said second voltage input, and a fourth drain coupled to said third drain.

5. The memory cell of claim 4, wherein said at least one semiconductor layer comprises P-type semiconductor material, and wherein said first and second semiconductor structures each comprise an N-type well.

6. The memory cell of claim 4, wherein said first semiconductor structure and said second semiconductor structure form portions of a single semiconductor structure.

7. The memory cell of claim 6, wherein said at least one semiconductor layer comprises P-type semiconductor material, and wherein said first semiconductor structure comprises an N-type well.

8. The memory cell of claim 8, further comprising:

a first access transistor formed in said at least one semiconductor layer having a first terminal coupled to said first and second drains, a second terminal coupled to a first column line and a first access gate coupled to a row line; and

a second access transistor formed in said at least one semiconductor layer having a third terminal coupled to said third and fourth drains, a fourth terminal coupled to a second column line and a second access gate coupled to said row line.

9. An SRAM memory array comprising:

a plurality of SRAM memory cells arranged in rows and columns and formed on a substrate assembly comprising at least one semiconductor layer, each of said plurality of memory cells comprising;

a first semiconductor structure and a second semiconductor structure formed within said at least one semiconductor layer, said first and second semiconductor structures being coupled to a first voltage input through respective first and third contacts formed within said first and second semiconductor structures;

a first pull-up transistor formed in said first semiconductor structure, said first pull-up transistor comprising a first gate, a first source and a first drain, wherein

said first source is coupled to said first semiconductor structure through a second contact formed within said first semiconductor structure so as to couple said first source to said first voltage input through a first combined parasitic resistance of said first semiconductor structure,

said first source of said first pull-up transistor, said first semiconductor structure, and said semiconductor layer are further configured to form a first parasitic bi-polar transistor including a base,

said base of said first bi-polar transistor is coupled to said second contact through a first component of said combined parasitic resistance and to said first contact through a second component of said combined parasitic resistance, and

said first pull-up transistor is arranged such that said first drain is positioned between said first source and said second contact along a surface of said semiconductor structure such that said second component of said combined parasitic resistance is substantially less than said combined parasitic resistance;

a first pull-down transistor formed in said at least one semiconductor layer, said first pull-down transistor comprising a second gate coupled to said first gate, a second source coupled to a second voltage input, and a second drain coupled to said first drain;

a second pull-up transistor formed in said second semiconductor structure, said second pull-up transistor comprising a third gate, a third source and a third drain, wherein

said third source is coupled to said second semiconductor structure through a fourth contact formed within said second semiconductor structure so as to couple said third source to said first voltage input through a second combined parasitic resistance of said second semiconductor structure,

said third source of said second pull-up transistor, said second semiconductor structure, and said semiconductor layer are further configured to form an additional first parasitic bi-polar transistor including a base,

said base of said additional bi-polar transistor is coupled to said fourth contact through a first component of said second combined parasitic resistance and to said third contact through a second component of said second combined parasitic resistance, and

said second pull-up transistor is arranged such that said third drain is positioned between said third source and said fourth contact along a surface of said second semiconductor structure such that said second component of said second combined parasitic resistance is substantially less than said second combined parasitic resistance;

a second pull-down transistor formed in said at least one semiconductor layer, said second pull-down transistor comprising a fourth gate coupled to said third gate, a fourth source coupled to said second voltage input, and a fourth drain coupled to said third drain;

a first access transistor formed in said at least one semiconductor layer having a first terminal coupled to said first and second drains, a second terminal coupled to a first column line and a first access gate coupled to a row line;

a second access transistor formed in said at least one semiconductor layer having a third terminal coupled to said third and fourth drains, a fourth terminal coupled to a second column line and a first access gate coupled to a row line; and

a memory decoder coupled to said plurality of memory cells for accessing each of said plurality of memory cells via respective ones of a plurality of said row lines and respective ones of a plurality of said first and second column lines.

10. The memory array of claim 9, wherein said first semiconductor structure and said second semiconductor structure form portions of a single substrate.

11. The memory array of claim 10, wherein said at least one semiconductor layer comprises P-type semiconductor material, and wherein said first semiconductor structure comprises an N-type well.

12. The memory array of claim 11, wherein said memory array comprises a plurality of said rows, and wherein each of said first and second pull-up transistors making up each of said rows of memory cells share said N-type well.

13. A computer system comprising:

a memory array formed on a substrate assembly comprising at least one semiconductor layer, said memory array comprising;

a plurality of memory cells arranged in rows and columns, each of said

a first semiconductor structure and a second semiconductor structure formed within said at least one semiconductor layer, said first and second semiconductor structures being coupled to a first voltage input through respective first and third contacts formed within said first and second semiconductor structures;

a first pull-up transistor formed in said first semiconductor structure, said first pull-up transistor comprising a first gate, a first source and a first drain, wherein

said first source is coupled to said first semiconductor structure through a second contact formed within said first semiconductor structure so as to couple said first source to said first voltage input through a first combined parasitic resistance of said first semiconductor structure,

said first source of said first pull-up transistor, said first semiconductor structure, and said semiconductor layer are further configured to form a first parasitic bi-polar transistor including a base,

said base of said first bipolar transistor is coupled to said second contact through a first component of said combined parasitic resistance and to said first contact through a second component of said combined parasitic resistance, and

said first pull-up transistor is arranged such that said first drain is positioned between said first source and said second contact along a surface of said semiconductor structure such that said second component of said combined parasitic resistance is substantially less than said combined parasitic resistance;

a first pull-down transistor formed in said at least one semiconductor layer, said first pull-down transistor comprising a second gate coupled to said first gate, a second source coupled to a second voltage input, and a second drain coupled to said first drain;

a second pull-up transistor formed in said second semiconductor structure, said second pull-up transistor comprising a third gate, a third source and a third drain, wherein

said third source is coupled to said second semiconductor structure through a fourth contact formed within said second semiconductor structure so as to couple said third source to said first voltage input through a second combined parasitic resistance of said second semiconductor structure,

said third source of said second pull-up transistor, said second semiconductor structure, and said semiconductor layer are further configured to form an additional first parasitic bi-polar transistor including a base,

said base of said additional bi-polar transistor is coupled to said fourth contact through a first component of said second combined parasitic resistance and to said third contact through a second component of said second combined parasitic resistance, and

said second pull-up transistor is arranged such that said third drain is positioned between said third source and said fourth contact along a surface of said second semiconductor structure such that said second component of said second combined parasitic resistance is substantially less than said second combined parasitic resistance;

a second pull-down transistor formed in said at least one semiconductor layer, said second pull-down transistor comprising a fourth gate coupled to said third gate, a fourth source coupled to said second voltage input, and a fourth drain coupled to said third drain;

a first access transistor formed in said at least one semiconductor layer having a first terminal coupled to said first and second drains, a second terminal coupled to a first column line and a first access gate coupled to a row line;

a second access transistor formed in said at least one semiconductor layer having a third terminal coupled to said third and fourth drains, a fourth terminal coupled to a second column line and a first access gate coupled to a row line; and

a memory decoder coupled to said plurality of memory cells for accessing each of said plurality of memory cells via said respective ones of a plurality of said row lines and respective ones of a plurality of said first and second column lines; and

a microprocessor in communication with each of said plurality of memory cells via said memory decoder.

14. An SRAM memory cell comprising:

a substrate assembly having at least one semiconductor layer;

a first semiconductor structure formed within said at least one semiconductor layer, said first semiconductor structure being coupled to a first voltage input through a first contact formed within said semiconductor structure;

a first pull-up transistor formed in said first semiconductor structure, said first pull-up transistor comprising a first gate, a first source and a first drain, wherein

said first source is coupled to said first semiconductor structure through a second contact formed within the semiconductor structure so as to couple said first source to said first voltage input through a combined parasitic resistance of said semiconductor structure,

said first source of said first pull-up transistor, said first semiconductor structure, and said semiconductor layer are further configured to form a first parasitic bi-polar transistor including a base,

said base of said first bi-polar transistor is coupled to said second contact through a first component of said combined parasitic resistance and to said first contact through a second component of said combined parasitic resistance, and

said first drain, said first source, said first contact, and said second contact are arranged such that said first component of said combined parasitic resistance is at least as large as said second component of said combined parasitic resistance; and

a first pull-down transistor formed in said at least one semiconductor layer, said first pull-down transistor comprising a second gate coupled to said first gate, a second source coupled to a second voltage input, and a second drain coupled to said first drain.

15. An SRAM memory cell as claimed in claim 14 wherein said first drain, said first source, said first contact, and said second contact are arranged such that said first component of said combined parasitic resistance is larger than said second component of said combined parasitic resistance.

16. An SRAM memory cell comprising:

a substrate assembly having at least one semiconductor layer;

a first semiconductor structure and a second semiconductor structure formed within said at least one semiconductor layer, said first and second semiconductor structures being coupled to a first voltage input through respective first and third contacts formed within said first and second semiconductor structures;

a first pull-up transistor formed in said first semiconductor structure, said first pull-up transistor comprising a first gate, a first source and a first drain, wherein

said first source is coupled to said first semiconductor structure through a second contact formed within said first semiconductor structure so as to couple said first source to said first voltage input through a first combined parasitic resistance of said first semiconductor structure,

said first source of said first pull-up transistor, said first semiconductor structure, and said semiconductor layer are further configured to form a first parasitic bi-polar transistor including a base,

said base of said first bi-polar transistor is coupled to said second contact through a first component of said combined parasitic resistance and to said first contact through a second component of said combined parasitic resistance, and

said first drain, said first source, said first contact, and said second contact are arranged such that said first component of said combined parasitic resistance is at least as large as said second component of said combined parasitic resistance;

a first pull-down transistor formed in said at least one semiconductor layer, said first pull-down transistor comprising a second gate coupled to said first gate, a second source coupled to a second voltage input, and a second drain coupled to said first drain;

a second pull-up transistor formed in said second semiconductor structure, said second pull-up transistor comprising a third gate, a third source and a third drain, wherein

said third source is coupled to said second semiconductor structure through a fourth contact formed within said second semiconductor structure so as to couple said third source to said first voltage input through a second combined parasitic resistance of said second semiconductor structure,

said third source of said second pull-up transistor, said second semiconductor structure, and said semiconductor layer are further configured to form an additional first parasitic bi-polar transistor including a base,

said base of said additional bi-polar transistor is coupled to said fourth contact through a first component of said second combined parasitic resistance and to said third contact through a second component of said second combined parasitic resistance, and

said third drain, said third source, said third contact, and said fourth contact are arranged such that said first component of said additional combined parasitic resistance is at least as large as said second component of said additional combined parasitic resistance; and

a second pull-down transistor formed in said at least one semiconductor layer, said second pull-down transistor comprising a fourth gate coupled to said third gate, a fourth source coupled to said second voltage input, and a fourth drain coupled to said third drain.

17. An SRAM memory cell as claimed in claim 16 wherein:

said first drain, said first source, said first contact, and said second contact are arranged such that said first component of said combined parasitic resistance is larger than said second component of said combined parasitic resistance; and

said third drain, said third source, said third contact, and said fourth contact are arranged such that said first component of said additional combined parasitic resistance is larger than said second component of said additional combined parasitic resistance.

18. An SRAM memory array comprising:

a plurality of SRAM memory cells arranged in rows and columns and formed on a substrate assembly comprising at least one semiconductor layer, each of said plurality of memory cells comprising;

a first semiconductor structure and a second semiconductor structure formed within said at least one semiconductor layer, said first and second semiconductor structures being coupled to a first voltage input through respective first and third contacts formed within said first and second semiconductor structures;

a first pull-up transistor formed in said first semiconductor structure, said first pull-up transistor comprising a first gate, a first source and a first drain, wherein

said first source is coupled to said first semiconductor structure through a second contact formed within said first semiconductor structure so as to couple said first source to said first voltage input through a first combined parasitic resistance of said first semiconductor structure,

said first source of said first pull-up transistor, said first semiconductor structure, and said semiconductor layer are further configured to form a first parasitic bi-polar transistor including a base,

said base of said first bi-polar transistor is coupled to said second contact through a first component of said combined parasitic resistance and to said first contact through a second component of said combined parasitic resistance, and

said first drain, said first source, said first contact, and said second contact are arranged such that said first component of said combined parasitic resistance is at least as large as said second component of said combined parasitic resistance;

a first pull-down transistor formed in said at least one semiconductor layer, said first pull-down transistor comprising a second gate coupled to said first gate, a second source coupled to a second voltage input, and a second drain coupled to said first drain;

a second pull-up transistor formed in said second semiconductor structure, said second pull-up transistor comprising a third gate, a third source and a third drain, wherein

said third source is coupled to said second semiconductor structure through a fourth contact formed within said second semiconductor structure so as to couple said third source to said first voltage input through a second combined parasitic resistance of said second semiconductor structure,

said third source of said second pull-up transistor, said second semiconductor structure, and said semiconductor layer are further configured to form an additional first parasitic bi-polar transistor including a base,

said base of said additional bi-polar transistor is coupled to said fourth contact through a first component of said second combined parasitic resistance and to said third contact through a second component of said second combined parasitic resistance, and

said third drain, said third source, said third contact, and said fourth contact are arranged such that said first component of said additional combined parasitic resistance is at least as large as said second component of said additional combined parasitic resistance;

a second pull-down transistor formed in said at least one semiconductor layer, said second pull-down transistor comprising a fourth gate coupled to said third gate, a fourth source coupled to said second voltage input, and a fourth drain coupled to said third drain;

a first access transistor formed in said at least one semiconductor layer having a first terminal coupled to said first and second drains, a second terminal coupled to a first column line and a first access gate coupled to a row line;

a second access transistor formed in said at least one semiconductor layer having a third terminal coupled to said third and fourth drains, a fourth terminal coupled to a second column line and a first access gate coupled to a row line; and

a memory decoder coupled to said plurality of memory cells for accessing each of said plurality of memory cells via respective ones of a plurality of said row lines and respective ones of a plurality of said first and second column lines.

19. An SRAM memory array as claimed in claim 18 wherein:

said first drain, said first source, said first contact, and said second contact are arranged such that said first component of said combined parasitic resistance is larger than said second component of said combined parasitic resistance; and

said third drain, said third source, said third contact, and said fourth contact are arranged such that said first component of said additional combined parasitic resistance is larger than said second component of said additional combined parasitic resistance.

21. A computer system as claimed in claim 18 wherein:

said first drain, said first source, said first contact, and said second contact are arranged such that said first component of said combined parasitic resistance is larger than said second component of said combined parasitic resistance; and

said third drain, said third source, said third contact, and said fourth contact are arranged such that said first component of said additional combined parasitic resistance is larger than said second component of said additional combined parasitic resistance.

20. A computer system comprising:

a memory array formed on a substrate assembly comprising at least one semiconductor layer, said memory array comprising;

a plurality of memory cells arranged in rows and columns, each of said memory cells comprising;

a first semiconductor structure and a second semiconductor structure formed within said at least one semiconductor layer, said first and second semiconductor structures being coupled to a first voltage input through respective first and third contacts formed within said first and second semiconductor structures;

a first pull-up transistor formed in said first semiconductor structure, said first pull-up transistor comprising a first gate, a first source and a first drain, wherein

said first source is coupled to said first semiconductor structure through a second contact formed within said first semiconductor structure so as to couple said first source to said first voltage input through a first combined parasitic resistance of said first semiconductor structure,

said first source of said first pull-up transistor, said first semiconductor structure, and said semiconductor layer are further configured to form a first parasitic bi-polar transistor including a base,

said base of said first bi-polar transistor is coupled to said second contact through a first component of said combined parasitic resistance and to said first contact through a second component of said combined parasitic resistance, and

said first drain, said first source, said first contact, and said second contact are arranged such that said first component of said combined parasitic resistance is at least as large as said second component of said combined parasitic resistance;

a first pull-down transistor formed in said at least one semiconductor layer, said first pull-down transistor comprising a second gate coupled to said first gate, a second source coupled to a second voltage input, and a second drain coupled to said first drain;

a second pull-up transistor formed in said second semiconductor structure, said second pull-up transistor comprising a third gate, a third source and a third drain, wherein

said third source is coupled to said second semiconductor structure through a fourth contact formed within said second semiconductor structure so as to couple said third source to said first voltage input through a second combined parasitic resistance of said second semiconductor structure,

said third source of said second pull-up transistor, said second semiconductor structure, and said semiconductor layer are further configured to form an additional first parasitic bi-polar transistor including a base,

said base of said additional bi-polar transistor is coupled to said fourth contact through a first component of said second combined parasitic resistance and to said third contact through a second component of said second combined parasitic resistance, and

said third drain, said third source, said third contact, and said fourth contact are arranged such that said first component of said additional combined parasitic resistance is at least as large as said second component of said additional combined parasitic resistance;

a second pull-down transistor formed in said at least one semiconductor layer, said second pull-down transistor comprising a fourth gate coupled to said third gate, a fourth source coupled to said second voltage input, and a fourth drain coupled to said third drain;

a first access transistor formed in said at least one semiconductor layer having a first terminal coupled to said first and second drains, a second terminal coupled to a first column line and a first access gate coupled to a row line;

a second access transistor formed in said at least one semiconductor layer having a third terminal coupled to said third and fourth drains, a fourth terminal coupled to a second column line and a first access gate coupled to a row line; and

a memory decoder coupled to said plurality of memory cells for accessing each of said plurality of memory cells via said respective ones of a plurality of said row lines and respective ones of a plurality of said first and second column lines; and

a microprocessor in communication with each of said plurality of memory cells via said memory decoder.