Adjustable energy quantum thin film plasma processing system

• US 6,007,879 A
• Filed: 12/12/1996
• Issued: 12/28/1999
• Est. Priority Date: 04/07/1995
• Status: Expired due to Term

• Current Assignee: Advanced Energy Industries Incorporated
• Original Assignee: Advanced Energy Industries Incorporated
• Inventors: Scholl, Richard A.
• Primary Examiner(s): PADGETT, MARIANNE L
• Application Number:
  US08/766,570
• Time in Patent Office: 1,111 Days
• Field of Search: 427/535, 427/536, 427/537, 427/539, 427/569, 427/570, 427/571, 427/572, 427/573, 427/545, 427/580, 427/8, 204/192.13, 204/192.12, 216/67, 216/68, 216/69, 216/70, 216/71
• US Class Current: 427/562
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: C23C 14/54 Controlling or regulating the coating process
• CPC Class Codes: H01J 37/32064 Circuits specially adapted for controlling the arc discharge for plasma torches H01H1/36
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

A method of thin film plasma processing which includes multiple power environments and circuitry is described so as to encompass a variety of configurations. The environments may establish an energy quantum which may be interactively adjusted such as for conditioning or processing when new targets or materials are inserted. The energy quantum can be increased from the traditionally low energy storage of a switch-mode power supply to a higher energy to allow more intense arc occurrences and, thus, the more rapid conditioning of a target. Switching between environments can be achieved manually or automatically through timing or through arc or plasma electrical characteristics sensing. Energy quantum may be adjusted through the inclusion of energy storage elements, hardwired elements, or through software configurations such as are possible with the utilization of a programmable processor. Applications for DC switch-mode thin film processing systems are specifically shown.

Claims

1. A method of multiple power non arc-based plasma processing comprising steps of:

a. supplying a solid material within a coating chamber;

b. creating a processing plasma by utilizing a switch-mode power supply which processes an area of said material within said coating chamber comprising steps of;

i. supplying a DC input voltage;

ii. generating an alternating signal from said DC input voltage;

ii. converting said alternating signal to a DC output; and

iv. applying said DC output to said processing plasma;

c. establishing a first operating power environment for said processing plasma through utilization of said switch-mode power supply wherein said first power environment has an arc energy quantum which begins to discharge upon an arc occurrence and which is preparatory to non arc-based processing; and

d. switching from said first operating power environment to establish a second operating power environment for said processing plasma which is powered by said switch-mode power supply wherein said second power environment has a different arc energy quantum which begins to discharge upon said arc occurrence and

wherein at least said second power environment achieves said non arc-based processing, and wherein each of said first and said second operating power environments act to affect said solid material.

2. A method of multiple power non arc-based plasma processing as described in claim 1 wherein said step of switching said power to establish said second power environment for said processing plasma occurs during the processing of said material.

3. A method of multiple power non arc-based plasma processing as described in claim 1 further comprising applying said non arc-based processing to a substrate within said coating chamber primarily through action of said second power environment.

4. A method of multiple power non arc-based plasma processing as described in claim 2 wherein said step of switching from said first power environment to establish said second power environment for said processing plasma comprises a step of adjusting said energy quantum of said first power environment.

5. A method of multiple power non arc-based plasma processing as described in claim 3 wherein said step of switching from said first power environment to establish said second power environment for said processing plasma comprises a step of adjusting said energy quantum of said first power environment.

6. A method of multiple power non arc-based plasma processing as described in claim 1 wherein each said power environment has a reaction time in which said switch-mode power supply responds to an arc occurrence and wherein said step of switching from said first power environment to establish said second power environment for said processing plasma comprises a step of changing said reaction time.

7. A method of multiple power non arc-based plasma processing as described in claim 1 wherein each said power environment has a current threshold level and wherein said step of switching from said first power environment to establish said second power environment for said processing plasma comprises a step of adjusting said current threshold level.

8. A method of multiple power non arc-based plasma processing as described in claim 1 wherein each said power environment has a voltage threshold level and wherein said step of switching from said first power environment to establish said second power environment for said processing plasma comprises a step of adjusting said voltage threshold level.

9. A method of non arc-based plasma processing as described in claim 1 wherein said step of switching from said first operating power environment occurs while processing said material.

10. A method of non arc-based plasma processing as described in claim 9 wherein said first power environment has a reaction time in which said switch-mode power supply responds to an arc occurrence and wherein said step of switching said energy quantum of said power environment while processing said material comprises a step of changing said reaction time.

11. A method of non arc-based plasma processing as described in claim 9 wherein said power environment has a current threshold level at which operation of said first power environment is adjusted and wherein said step of switching from said first operating power environment while processing said material comprises a step of changing said current threshold level at which operation of said power environment is adjusted.

12. A method of non arc-based plasma processing as described in claim 9 wherein said first power environment has a voltage threshold level at which operation of said first power environment is adjusted and wherein said step of switching from said first operating power environment while processing said material comprises a step of changing said voltage threshold level at which operation of said power environment is adjusted.

13. A method of multiple power non arc-based plasma processing as described in claim 5 wherein each said power environment has a reaction time in which said switch-mode power supply responds to an arc occurrence and wherein said step of switching from said first power environment to establish a second power environment for said processing plasma comprises a step of changing said reaction time.

14. A method of multiple power non arc-based plasma processing as described in claim 1 wherein said step of creating said processing plasma which processes said area of said material within said coating chamber is accomplished through use of said switch-mode having a reaction time in which said switch-mode power supply responds to said arc occurrence and wherein said step of switching from said first power environment to establish said second power environment for said processing plasma comprises a step of changing said reaction time.

15. A method of multiple power non arc-based plasma processing as described in claim 1 wherein said step of establishing said first power environment for said processing plasma is accomplished through use of said switch-mode power supply and an energy storage element and wherein said step of switching comprises a step of physically altering said energy storage element.

16. A method of multiple power non arc-based plasma processing as described in claim 5 wherein said step of establishing said first power environment for said processing plasma is accomplished through use of said switch-mode power supply and an output energy storage capability and wherein said step of switching comprises a step of physically altering said energy storage capability.

26. A method of multiple power non arc-based plasma processing as described in claim 1, 4, or 17 and further comprising a step of determining when to accomplish said step of switching.

27. A method of multiple power non arc-based plasma processing as described in claim 26 wherein said step of determining when to accomplish said step of switching comprises a step of controlling an amount of time said material is subjected to at least one of said environments.

28. A method of multiple power non arc-based plasma processing as described in claim 26 wherein said plasma has at least one electrical condition and wherein said step of determining when to accomplish said step of switching comprises a step of sensing said electrical condition of said plasma.

29. A method of multiple power non arc-based plasma processing as described in claim 26 wherein said plasma has arc occurrences and wherein said step of determining when to accomplish said step of switching comprises a step of measuring a frequency of said arc occurrences within said plasma.

30. A method of multiple power non arc-based plasma processing as described in claim 26 and further comprising a step of indicating for manual operation when to accomplish said step of switching.

31. A method of multiple power non arc-based plasma processing as described in claim 26 wherein said step of switching is accomplished automatically.

17. A method of multiple power non arc-based plasma processing comprising steps of:

a. supplying a solid material within a coating chamber containing electrodes;

b. applying power to said electrodes in said coating chamber by utilizing a switch-mode power supply comprising steps of;

i. accepting a DC input voltage;

ii. generating an alternating signal from said DC input voltage;

iii. converting said alternating signal to a DC output; and

iv. applying said DC output to said electrodes in said coating chamber;

c. creating a processing plasma which affects an area of said material within said coating chamber and wherein said area presents an initial varying impedance across said area;

d. subjecting said material to a conditioning environment having an operating power within said coating chamber through utilization of said switch-mode powers and which acts to make said material present a more uniform impedance relative to said initial varying impedance across said area;

e. switching from said conditioning environment to create a plasma processing environment within said coating chamber and which is powered by said switch-mode power supply; and

f. non arc-based processing a substrate within said coating chamber primarily through action of said processing environment, and

wherein each of said conditioning environment and said plasma processing environment act to affect said solid material.

18. A method of multiple power non arc-base plasma processing as described in claim 17 wherein said material has localized low impedance areas compared to a surrounding area and wherein said step of subjecting said material to said conditioning environment within said coating chamber comprises a step of eliminating said localized low impedance areas.

19. A method of multiple power non arc-based plasma processing as described in claim 17 wherein said conditioning environment is created by adjusting said power.

20. A method of multiple power non arc-based plasma processing as described in claim 17 wherein said conditioning environment and said processing environment each have an arc energy quantum which begins to discharge upon an arc occurrence and wherein said step of switching from said conditioning environment to create said processing environment within said coating chamber comprises a step of adjusting said energy quantum.

21. A method of multiple power non arc-based plasma processing as described in claim 20 wherein the energy quantum of said conditioning environment is greater than the energy quantum of said processing environment.

22. A method of multiple power non arc-based plasma processing as described in claim 17 wherein said step of applying said dc output to said electrodes in said coating chamber is accomplished through use of said switch-mode power supply having a reaction time in which said switch-mode power supply responds to an arc occurrence and wherein said step of switching to create said plasma processing environment within said coating chamber comprises a step of changing said reaction time.

23. A method of multiple power non arc-based plasma processing as described in claim 20 wherein said conditioning environment has a reaction time in which said switch-mode power supply responds to an arc occurrence and wherein said step of adjusting said energy quantum comprises a step of changing said reaction time.

24. A method of multiple power non arc-based plasma processing as described in claim 17 wherein said step of applying said dc output to said electrodes in said coating chamber is accomplished through use of said switch-mode power supply and an energy storage element and wherein said step of switching comprises a step of physically altering said energy storage element.

25. A method of multiple power non arc-based plasma processing as described in claim 20 wherein said step of applying said DC output to said electrodes in said coating chamber is accomplished through use of said switch-mode power supply and an output energy storage capability and wherein said step of adjusting said energy quantum comprises a step of physically altering said energy storage capability.

32. A method of non arc-based plasma processing comprising steps of:

a. supplying a solid material within a coating chamber containing electrodes;

b. applying power to said electrodes in said coating chamber;

c. creating a processing plasma which processes said material to achieve non-arc based processing within said coating chamber;

d. subjecting said processing plasma to an operating power environment through utilization of a switch-mode power supply having a reaction time in which said switch-mode power supply responds to an arc occurrence; and

e. changing said reaction time of said operating power environment wherein at least one said reaction time exists during said non-arc based processing, and

wherein each operating power environments act to affect said solid material.

33. A method of non arc-based plasma processing as described in claim 32 wherein said step of changing said reaction time of said power environment occurs while processing said material.