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Process for etching a semiconductor lead frame

  • US 6,008,068 A
  • Filed: 06/17/1997
  • Issued: 12/28/1999
  • Est. Priority Date: 06/14/1994
  • Status: Expired due to Term
First Claim
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1. A method for producing a lead frame having a plurality of outer leads and a plurality of inner leads respectively having tips, for a resin-sealed semiconductor package, comprising the steps of:

  • coating a first and a second major surface of a blank for a lead frame with a first and a second photoresist layer, respectively;

    thereafter, forming a first resist pattern having a first opening on the first major surface of the blank by exposing the first photoresist layer through a first pattern mask and a second resist pattern having second openings on the second major surface of the blank by exposing the second photoresist layer through a second pattern mask;

    then, applying a first etchant to the first and second major surfaces of the blank to form a first etched recess in the first major surface, and to form a second etched recess in the second major surface without penetrating the blank to the first etched recess;

    thereafter, forming an etch-resistant layer of an etchresistant material to fill the first etched recess in the first major surface of the blank;

    then, applying a second etchant to the second major surface of the blank to etch through remaining portions of the blank from the second etched recess; and

    thereafter, removing the etch-resistant layer, the first resist pattern and the second resist pattern from the resulting lead frame and cleaning the lead frame.

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