Fabrication process of a semiconductor device including a dicing process of a semiconductor wafer

• US 6,008,069 A
• Filed: 10/17/1997
• Issued: 12/28/1999
• Est. Priority Date: 10/18/1996
• Status: Expired due to Term

• Current Assignee: Socionext Inc.
• Original Assignee: Fujitsu Limited
• Inventors: Yamada, Yutaka
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US08/953,685
• Time in Patent Office: 802 Days
• Field of Search: 438/113, 438/114, 438/460, 438/462, 438/467, 148/370
• US Class Current: 438/113
• CPC Class Codes: B23D 65/00 Making tools for sawing machines or sawing devices for use in cutting any kind of material
• CPC Class Codes: B28D 5/022 by cutting with discs or wheels
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: Y10S 977/724 Devices having flexible or movable element
• CPC Class Codes: Y10S 977/773 Nanoparticle, i.e. structure having three dimensions of 100 nm or less
• CPC Class Codes: Y10S 977/775 Nanosized powder or flake, e.g. nanosized catalyst

Abstract

A rotary dicing blade includes a rotary hub, a blade edge provided on the rotary hub along an outer periphery thereof, and abrasive particles provided on the blade edge, wherein the abrasive particles contain fullerene particles.

Claims

1. A method of dicing a wafer, said method comprising a step of dicing said wafer by a rotary dicing blade, said rotary dicing blade comprising:

a rotary hub;

a blade edge provided on said rotary hub along an outer periphery thereof; and

abrasive particles provided on said blade edge;

said abrasive particles comprising fullerene particles.

2. A method as claimed in claim 1, wherein said abrasive particles essentially consist of fullerene.

3. A rotary dicing blade as claimed in claim 1, wherein said abrasive particles further include diamond abrasive particles.

4. A rotary dicing blade as claimed in claim 1, wherein said abrasive particles further include carbon BN particles.

5. A method of fabricating a semiconductor device including a step of dicing a semiconductor substrate;

said step of dicing being conducted by a rotary dicing blade comprising;

a rotary hub;

a blade edge provided on said rotary hub along an outer periphery thereof; and

abrasive particles provided on said blade edge;

said abrasive particles comprising fullerene particles.

6. A method as claimed in claim 5, wherein said abrasive particles essentially consist of fullerene.

7. A rotary dicing blade as claimed in claim 5, wherein said abrasive particles further include diamond abrasive particles.

8. A rotary dicing blade as claimed in claim 5, wherein said abrasive particles further include carbon BN particles.