Ultra shallow junction formation using amorphous silicon layer
First Claim
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1. A method of fabricating a semiconductor device comprising:
- providing a silicon body;
providing an insulator layer over the silicon body;
providing a conductor material over the insulator layer to form a gate electrode over the silicon body;
providing an amorphous silicon layer of a predetermined depth at the surface of the silicon body, wherein the act of providing an amorphous silicon layer follows the act of providing a conductor material;
providing spacers on the insulator adjacent the gate electrode;
using the gate electrode and the spacers as masking material, introducing a first impurity into the silicon body through the insulator layer;
removing said spacers;
providing a second impurity in the amorphous silicon layer; and
diffusing the second impurity in the amorphous silicon layer into to a depth less than said predetermined depth.
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Abstract
A method of achieving shallow junctions in a semiconductor device is achieved by providing an amorphous silicon layer over an epitaxial layer, implanting ions into the amorphous silicon layer, and annealing the resulting device to recrystallize the amorphous silicon layer and drive in the implanted ions to a shallow depth less than the depth of the amorphous silicon layer.
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Citations
15 Claims
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1. A method of fabricating a semiconductor device comprising:
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providing a silicon body; providing an insulator layer over the silicon body; providing a conductor material over the insulator layer to form a gate electrode over the silicon body; providing an amorphous silicon layer of a predetermined depth at the surface of the silicon body, wherein the act of providing an amorphous silicon layer follows the act of providing a conductor material; providing spacers on the insulator adjacent the gate electrode; using the gate electrode and the spacers as masking material, introducing a first impurity into the silicon body through the insulator layer; removing said spacers; providing a second impurity in the amorphous silicon layer; and diffusing the second impurity in the amorphous silicon layer into to a depth less than said predetermined depth. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating a semiconductor device comprising:
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providing a silicon body; providing an oxide layer over the silicon body; providing a polysilicon layer over the oxide layer; implanting ions through the polysilicon layer, oxide layer and into the silicon body to form an amorphous silicon layer of a predetermined depth under the oxide layer; patterning the polysilicon layer and oxide layer to form a gate electrode and to expose a portion of the amorphous silicon layer; providing oxide spacers adjacent to the gate electrode; using the gate electrode and the oxide spacers as masking material, introducing a first impurity into the silicon body; removing said oxide spacers; implanting a second impurity into the amorphous silicon layer; and diffusing the second impurity implanted in the amorphous silicon layer to a depth less than said predetermined depth. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification