Vertical transistor and method
First Claim
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1. A vertical transistor, comprising:
- a first semiconductor layer of a first conductive type;
a gate structure of a second conductive type disposed on the first semiconductor layer;
the gate structure including a plurality of gates separated by channels;
a second semiconductor layer of the first conductive type disposed over the gate structure and in the channels;
an arresting element disposed between an upper surface of the gate and the second semiconductor layer; and
a void formed in the second semiconductor layer over the gate.
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Abstract
A vertical transistor (70) comprising a first semiconductor layer (14) of a first conductive type. A gate structure (32) of a second conductive type disposed on the first semiconductor layer (14). The gate structure (32) may include a plurality of gates (38) separated by channels (40). A second semiconductor layer (50) of the first conductive type may be disposed over the gate structure (32) and in the channels (40). An arresting element (36) may be disposed between and upper surface of the gates (38) and the second semiconductor layer (50). A void (52) may be formed in the second semiconductor layer (50) over the gate (38).
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Citations
15 Claims
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1. A vertical transistor, comprising:
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a first semiconductor layer of a first conductive type; a gate structure of a second conductive type disposed on the first semiconductor layer; the gate structure including a plurality of gates separated by channels; a second semiconductor layer of the first conductive type disposed over the gate structure and in the channels; an arresting element disposed between an upper surface of the gate and the second semiconductor layer; and a void formed in the second semiconductor layer over the gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An integrated circuit, comprising:
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a substrate of a first conductive type; a first source/drain layer of the first conductive type; a gate structure of a second conductive type disposed on the first source/drain layer; the gate structure including a plurality of gates separated by channels; a second source/drain layer of the first conductive type disposed over the gate structure and in the channels; an arresting element disposed between an upper surface of the gate and the second source/drain layer; and a void formed in the second source/drain layer over the gate. - View Dependent Claims (12, 13, 14, 15)
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Specification