Method for the releasable bonding and subsequent separation of reversibly bonded and polished wafers and also a wafer structure and wafer

• US 6,010,591 A
• Filed: 11/19/1997
• Issued: 01/04/2000
• Est. Priority Date: 11/22/1996
• Status: Expired due to Fees

• Current Assignee: Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften e.V. (Max-Planck-Gesellschaft zur Frderung der Wissenschaften e)
• Original Assignee: Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften e.V. (Max-Planck-Gesellschaft zur Frderung der Wissenschaften e)
• Inventors: Gosele, Ulrich
• Primary Examiner(s): Osele, Mark A.
• Application Number:
  US08/974,278
• Time in Patent Office: 776 Days
• Field of Search: 156/153, 156/154, 156/281, 156/344, 148/DIG. 12, 148/DIG. 17, 438/455, 438/456
• US Class Current: 156/281
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 156/93 Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
• CPC Class Codes: Y10T 156/11 Methods of delaminating, per se; i.e. , separating at bonding face

Abstract

A method for the releasable bonding of at least two wafers (10, 12), for example of two silicon wafers (silicon discs), or of a silicon wafer and a glass wafer, or of a semiconductor wafer and a cover wafer, by a wafer bonding method in which the surfaces to be brought into contact with one another are at least substantially optically smooth and flat. Prior to bringing the surfaces of the wafers (10, 12) into contact, one or more drops of a liquid are applied to at least one of the surfaces, and the wafer bonding method is carried out at least substantially at room temperature, or at a somewhat higher temperature, or optionally at a somewhat lower temperature. The wafers (10, 12) which are bonded together can easily be separated from one another in that at least the liquid enclosed between the wafers (10, 12), which are bonded to one another, is exposed to a temperature lying substantially above the bonding temperature at which the liquid vaporizes. A wafer structure is also disclosed.

Claims

1. Method for releasably bonding at least two wafers having surfaces to be brought into contact with one another that are at least substantially optically smooth and flat and that form at least one recess prior to bringing the surfaces of the wafers into contact, the method comprising the steps of app1ying one or more drops of a liquid into the at least one recess and maintaining a temperature of the liquid in a range between somewhat higher to somewhat lower than room temperature.

2. Method in accordance with claim 1 including uniformly distributing the liquid prior to bringing the surfaces of the wafers into contact over at least one of the surfaces and selecting a quantity of liquid sufficient to form, in distributed form, a layer of liquid having the thickness in a range between one molecule and ten molecules of the liquid.

3. Method in accordance with claim 1 including forming a plurality of recesses in at least one of the surfaces to be brought into contact.

4. Method in accordance with claim 3, comprising forming the recess in one of a central region of the at least one wafer and a marginal region.

5. Method in accordance with claim 4 wherein the step of forming comprises forming the recess in a customary flattened portion of the marginal region.

6. Method in accordance with claim 4 wherein forming the recess comprises forming it in a marked margin of the marginal region.

7. Method in accordance with claim 1, characterized in that the quantity of liquid corresponds at least substantially to the volume of the recess.

8. Method in accordance with claim 1 comprising using deionized and filtered water as the liquid.

9. Method in accordance with claim 8 comprising making the surfaces to be brought into contact hydrophobic.

10. Method according to claim 1 including separating the previously bonded wafers by exposing at least the liquid between the wafers to a temperature substantially above a temperature at which the liquid vaporizes.

11. Method in accordance with claim 10 comprising holding the bonded wafers in respective, oppositely disposed vacuum chucks, pre-stressing the wafers in a direction away from each others and in this state subjecting the liquid between the wafers to the temperature substantially above room temperature.

12. Wafer structure comprising at least two wafers bonded to one another by a layer of a liquid between opposing surfaces of the wafers, a recess formed by at least one of the surfaces, and wherein the liquid is present at one or more points distributed over areas of the surfaces of the wafers that are bonded to one another.

14. Wafer structure in accordance with claim 12 wherein the recess is arranged in one of a central region of the at least one wafer and a marginal region of the at least one wafer.

15. Wafer structure according to claim 14 wherein the recess is in a usually flattened portion of the marginal region.

16. Wafer structure in accordance with claim 14 wherein a portion of the recess is located in a marked margin of the marginal region.

17. Wafer structure in accordance with claim 12 wherein the liquid is deionized and filtered water.

18. Wafer structure in accordance with claim 12 including arranging at least one wafer in a container.

13. Wafer structure in accordance with claim 13, wherein a quantity of the liquid corresponds at least substantially to a volume of the recess.

19. Wafer for use in a wafer structure including at least two wafers releasably bonded to each other by a layer of a liquid between them, the wafer comprising at least one recess for the reception of a liquid and located in one of a central region and a marginal region of the wafer.

20. Method for separating first and second wafers having opposing surfaces that are at least substantially optically smooth and flat, the wafers being releasably bonded to each other by a liquid disposed between the opposing surfaces, the method comprising exposing the liquid to a temperature substantially above a temperature at which the liquid vaporizes to thereby cause a release of the bond between the wafers and their separation from each other.

21. Method according to claim 20 further comprising holding the bonded wafers in respective, oppositely disposed vacuum chucks, pre-stressing the wafers in a direction away from each other, and while the wafers are pre-stressed subjecting the liquid between the wafers to a temperature substantially above room temperature.