Metal oxide stack for flash memory application

• US 6,011,289 A
• Filed: 09/16/1998
• Issued: 01/04/2000
• Est. Priority Date: 09/16/1998
• Status: Expired due to Term

• Current Assignee: Monterey Research, LLC (Vector Capital Corporation)
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Huang, Richard J., Shen, Lewis
• Primary Examiner(s): WALLACE, VALENCIA MARTIN
• Application Number:
  US09/154,073
• Time in Patent Office: 475 Days
• Field of Search: 257/315, 257/317, 257/319, 257/321, 365/185.11, 365/185.13, 438/264, 438/286
• US Class Current: 257/321
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/42324 Gate electrodes for transistors with a floating gate
• CPC Class Codes: H01L 29/4975 being a silicide layer, e.g. TiSi2

Abstract

In order to alleviate lifting problems and to reduce the height of the stack, a tungsten layer is formed on a interpoly dielectric layer, such as an ONO layer, which separates the conductive control gate from a polysilicon floating gate that is in turn formed on a tunnel oxide layer. The tungsten layer is protected by the provision of a tungsten silicide cap which is formed over the tungsten layer and which therefore prevents oxidation of the metal. The two tungsten based layers are such as to replace the second polysilicon layer which is normally used to form the floating gate.

Claims

1. A method of manufacturing a semiconductor device comprising a gate structure, the method comprising:

forming a polysilicon layer on a tunnel oxide layer;

forming an interpoly dielectric layer over the polysilicion layer;

forming a tungsten layer on the polysilicon layer; and

forming a tungsten silicide layer on the tungsten layer.

2. The method as set forth in claim 1, further comprising the steps of:

removing selected portions of said polysilicon layer, said interpoly dielectric layer, said tungsten layer, said tungsten silicide layer, and said tunnel oxide layer;

doping portions of an underlying substrate to form source and drain implants; and

depositing a dielectric layer.

3. The method as set forth in claim 2, further comprising:

forming first, second and third openings through the dielectric layer and filling the openings with an electrically conductive material so as to establish electrical contact with the source, the drain and said tungsten silicide layer respectively.

4. A semiconductor device having a gate comprising:

a tunnel oxide layer formed on a main surface of a substrate;

a polysilicon layer formed on the tunnel oxide layer;

an interpoly dielectric layer formed over the polysilicion layer;

a tungsten layer formed on the polysilicon layer; and

a tungsten silicide layer formed on the tungsten layer.

5. The semiconductor device as set forth in claim 4, further comprising:

source and drain portions formed by removing selected portions of said polysilicon layer, said interpoly dielectric layer, said tungsten layer, said tungsten silicide layer, and said tunnel oxide layer and doping portions of an underlying substrate to form source and drain portions; and

an encasing dielectric layer formed over the source and drain portions, and the stack of tunnel oxide, polysilicon, interpoly dielectric, tungsten and tungsten silicide.

6. A semiconductor device as set forth in claim 5, further comprising:

first, second and third openings formed through the encasing dielectric layer so as to respectively terminate at the source, the drain and said tungsten silicide layer respectively, said first, second and third openings being filled with an electrically conductive material so as to establish electrical contact with the source, the drain and said tungsten silicide layer respectively.

7. The semiconductor device according to claim 4, wherein the gate structure also extends above the main surface to a height no greater than about 1500 Å

to about 3000 Å

.

8. The semiconductor device according to claim 7, wherein:

the tungsten layer has a thickness of about 500 to about 1500; and

the tungsten silicide layer has a thickness of about 500 to about 2000.