High voltage termination with buried field-shaping region

• US 6,011,298 A
• Filed: 12/31/1996
• Issued: 01/04/2000
• Est. Priority Date: 12/31/1996
• Status: Expired due to Term

• Current Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Original Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Inventors: Blanchard, Richard A.
• Primary Examiner(s): Hardy, David B.
• Application Number:
  US08/775,632
• Time in Patent Office: 1,099 Days
• Field of Search: 257/409, 257/339, 257/345, 257/610, 257/611, 257/168, 257/607, 257/653, 257/927, 438/911, 438/965
• US Class Current: 257/653
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0623 Buried supplementary region, e.g. buried guard ring multi-RESURF H01L29/0634
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: Y10S 257/927 Different doping levels in different parts of PN junction to produce shaped depletion layer

Abstract

A semiconductor device structure and method are presented for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region. The structure includes a region of second conductivity type in the substrate completely buried in the substrate below and separated from the device region. The region of second conductivity type is located a predetermined distance away from the device region. The distance is sufficient to permit a depletion region to form between the region of second conductivity type and the device region, when a first voltage is applied between the device region and the substrate. The distance also is determined to produce a radius of curvature of the depletion region, when a second voltage that is larger than the first voltage is applied between the device region and the substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if the region of second conductivity type were not present. Traditional field shaping regions spaced from the device region at a surface of the substrate and spaced from the region of second conductivity type may be used in conjunction with the buried ring, if desired.

Claims

1. A semiconductor device, comprising:

a substrate of first conductivity type;

a device region in said substrate of second conductivity type;

a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region, said region of second conductivity type being a ring encircling at least a portion of said semiconductor device, said region of second conductivity type having a center located vertically beneath an outermost doped region of second conductivity type of said semiconductor device.

2. The semiconductor device of claim 1 wherein said region of second conductivity type is located at a distance away from said device region sufficient to permit a depletion region to form between said region of second conductivity type and said device region, when a first voltage is applied between said device region and said substrate.

3. The semiconductor device of claim 2 wherein said distance that said region of second conductivity type is located away from said device region is sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if said region of second conductivity type were not present.

4. The semiconductor device of claim 1 wherein said semiconductor device is a portion of an integrated circuit.

5. The semiconductor device of claim 1 wherein said semiconductor device is a discrete device.

6. The semiconductor device of claim 1 further comprising a field shaping region spaced from said device region at a surface of said substrate and spaced from said region of second conductivity type.

7. The semiconductor device of claim 6 wherein said region of second conductivity type is located at a distance away from said field shaping region sufficient to permit a depletion region to form between said region of second conductivity type and said field shaping region, when a first voltage is applied between said device region and said substrate.

8. The semiconductor device of claim 7 wherein said distance that said region of second conductivity type is located away from said field shaping region is sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the field shaping region that would be formed if said region of second conductivity type were not present.

45. The semiconductor device in accordance with claim 1 wherein said outermost doped region comprises said device region.

46. The semiconductor device in accordance with claim 1 wherein said outermost doped region comprises a field shaping region spaced from said device region and spaced from said region of second conductivity.

47. The semiconductor device in accordance with claim 1 wherein said region of second conductivity type has a lower doping concentration than said device region.

9. A semiconductor device structure for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region, comprising:

a region of second conductivity type in said substrate completely buried in said substrate below and separated from said device region, said region of second conductivity type being a ring surrounding at least a portion of said device region, said region of second conductivity having a center located vertically beneath an outermost doped region of second conductivity type of said semiconductor device structure.

10. The semiconductor device structure of claim 9 wherein said region of second conductivity type is located at a distance away from said device region sufficient to permit a depletion region to form between said region of second conductivity type and said device region, when a first voltage is applied between said device region and said substrate.

11. The semiconductor device structure of claim 10 wherein said distance that said region of second conductivity type is located away from said device region is sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if said region of second conductivity type were not present.

12. The semiconductor device structure of claim 9 wherein said semiconductor device is a portion of an integrated circuit.

13. The semiconductor device structure of claim 9 wherein said semiconductor device is a discrete device.

14. The semiconductor device structure of claim 9 further comprising a field shaping region spaced from said device region at a surface of said substrate and spaced from said region of second conductivity type.

15. The semiconductor device structure of claim 14 wherein said region of second conductivity type is located at a distance away from said field shaping region sufficient to permit a depletion region to form between said region of second conductivity type and said field shaping region, when a first voltage is applied between said device region and said substrate.

16. The semiconductor device structure of claim 15 wherein said distance that said region of second conductivity type is located away from said field shaping region is sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the field shaping region that would be formed if said region of second conductivity type were not present.

21. The method of claim 10 further comprising locating said region of second conductivity type at a distance away from said field shaping region sufficient to permit a depletion region to form between said region of second conductivity type and said field shaping region, when a first voltage is applied between said device region and said substrate.

22. The method of claim 21 wherein said step of locating said region of second conductivity type further comprises locating said field shaping region from said device region a distance sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the field shaping region that would be formed if said region of second conductivity type were not present.

48. The semiconductor device structure in accordance with claim 9 wherein said outermost doped region comprises said device region.

49. The semiconductor device structure in accordance with claim 9 wherein said outermost doped region comprises a field shaping region spaced from said device region and spaced from said region of second conductivity.

50. The semiconductor device structure in accordance with claim 9 wherein said region of second conductivity type has a lower doping concentration than said device region.

17. A method for increasing a breakdown voltage of a semiconductor device, comprising:

providing a substrate of first conductivity type having a device region of second conductivity type therein;

forming a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region by forming a ring encircling at least a portion of said semiconductor device, said region of second conductivity having a center located vertically beneath an outermost doped region of second conductivity type of said semiconductor device.

18. The method of claim 17 wherein said step forming a region of second conductivity type comprises locating said region of second conductivity type at a distance away from said device region sufficient to permit a depletion region to form between said region of second conductivity type and said device region, when a first voltage is applied between said device region and said substrate.

19. The method of claim 18 wherein step of locating said region of second conductivity type comprises locating said region of second conductivity type a distance away from said device region sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if said region of second conductivity type were not present.

20. The method of claim 17 further comprising providing a field shaping region spaced from said device region at a surface of said substrate and spaced from said region of second conductivity type.

51. The method in accordance with claim 17 wherein said outermost doped region comprises said device region.

52. The method in accordance with claim 17 wherein said outermost doped region comprises a field shaping region spaced from said device region and spaced from said region of second conductivity.

53. The method in accordance with claim 17 wherein said region of second conductivity type has a lower doping concentration than said device region.

23. A semiconductor device, comprising:

a substrate of first conductivity type;

a device region in said substrate of second conductivity type;

a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region; and

a field shaping region of second conductivity type spaced from said device region and spaced from said region of second conductivity, said region of second conductivity having a center located vertically beneath said field shaping region.

24. The semiconductor device of claim 23 wherein said region of second conductivity type is located at a distance away from said device region sufficient to permit a depletion region to form between said region of second conductivity type and said device region, when a first voltage is applied between said device region and said substrate.

25. The semiconductor device of claim 24 wherein said distance that said region of second conductivity type is located away from said device region is sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if said region of second conductivity type were not present.

26. The semiconductor device of claim 23 wherein said semiconductor device is a portion of an integrated circuit.

27. The semiconductor device of claim 23 wherein said semiconductor device is a discrete device.

28. The semiconductor device of claim 23 wherein said region of second conductivity has lower doping concentration than said device region.

29. The semiconductor device of claim 23 wherein said region of second conductivity type is located at a distance away from said field shaping region sufficient to permit a depletion region to form between said region of second conductivity type and said field shaping region, when a first voltage is applied between said device region and said substrate.

30. The semiconductor device of claim 29 wherein said distance that said region of second conductivity type is located away from said field shaping region is sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the field shaping region that would be formed if said region of second conductivity type were not present.

31. A semiconductor device structure for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region, comprising:

a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region; and

a field shaping region of second conductivity type spaced from said device region and spaced from said region of second conductivity, said region of second conductivity having a center located vertically beneath said field shaping region.

32. The semiconductor device structure of claim 31 wherein said region of second conductivity type is located at a distance away from said device region sufficient to permit a depletion region to form between said region of second conductivity type and said device region, when a first voltage is applied between said device region and said substrate.

33. The semiconductor device structure of claim 32 wherein said distance that said region of second conductivity type is located away from said device region is sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if said region of second conductivity type were not present.

34. The semiconductor device structure of claim 31 wherein said semiconductor device is a portion of an integrated circuit.

35. The semiconductor device structure of claim 31 wherein said semiconductor device is a discrete device.

36. The semiconductor device of claim 31 wherein said region of second conductivity has a lower doping concentration than said device region.

37. The semiconductor device structure of claim 31 wherein said region of second conductivity type is located at a distance away from said field shaping region sufficient to permit a depletion region to form between said region of second conductivity type and said field shaping region, when a first voltage is applied between said device region and said substrate.

38. The semiconductor device structure of claim 37 wherein said distance that said region of second conductivity type is located away from said field shaping region is sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the field shaping region that would be formed if said region of second conductivity type were not present.

39. A method for increasing a breakdown voltage of a semiconductor device, comprising:

providing a substrate of first conductivity type having a device region of second conductivity type therein;

forming a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region; and

forming a field shaping region of second conductivity type spaced from said device region and spaced from said region of second conductivity, said region of second conductivity having a center located vertically beneath said field shaping region.

40. The method of claim 39 wherein said step forming a region of second conductivity type comprises locating said region of second conductivity type at a distance away from said device region sufficient to permit a depletion region to form between said region of second conductivity type and said device region, when a first voltage is applied between said device region and said substrate.

41. The method of claim 40 wherein step of locating said region of second conductivity type comprises locating said region of second conductivity type a distance away from said device region sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if said region of second conductivity type were not present.

42. The method of claim 39 further comprising providing said region of second conductivity with a lower doping concentration than said device region.

43. The method of claim 39 further comprising locating said region of second conductivity type at a distance away from said field shaping region sufficient to permit a depletion region to form between said region of second conductivity type and said field shaping region, when a first voltage is applied between said device region and said substrate.

44. The method of claim 43 wherein said step of locating said region of second conductivity type further comprises locating said field shaping region from said field shaping region a distance sufficient to produce a radius of curvature of the depletion region, when a second voltage that is larger than said first voltage is applied between said device region and said substrate, that is larger than a radius of curvature of the depletion region about the field shaping region that would be formed if said region of second conductivity type were not present.