High voltage termination with buried field-shaping region
First Claim
1. A semiconductor device, comprising:
- a substrate of first conductivity type;
a device region in said substrate of second conductivity type;
a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region, said region of second conductivity type being a ring encircling at least a portion of said semiconductor device, said region of second conductivity type having a center located vertically beneath an outermost doped region of second conductivity type of said semiconductor device.
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Abstract
A semiconductor device structure and method are presented for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region. The structure includes a region of second conductivity type in the substrate completely buried in the substrate below and separated from the device region. The region of second conductivity type is located a predetermined distance away from the device region. The distance is sufficient to permit a depletion region to form between the region of second conductivity type and the device region, when a first voltage is applied between the device region and the substrate. The distance also is determined to produce a radius of curvature of the depletion region, when a second voltage that is larger than the first voltage is applied between the device region and the substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if the region of second conductivity type were not present. Traditional field shaping regions spaced from the device region at a surface of the substrate and spaced from the region of second conductivity type may be used in conjunction with the buried ring, if desired.
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Citations
53 Claims
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1. A semiconductor device, comprising:
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a substrate of first conductivity type; a device region in said substrate of second conductivity type; a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region, said region of second conductivity type being a ring encircling at least a portion of said semiconductor device, said region of second conductivity type having a center located vertically beneath an outermost doped region of second conductivity type of said semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 45, 46, 47)
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9. A semiconductor device structure for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region, comprising:
a region of second conductivity type in said substrate completely buried in said substrate below and separated from said device region, said region of second conductivity type being a ring surrounding at least a portion of said device region, said region of second conductivity having a center located vertically beneath an outermost doped region of second conductivity type of said semiconductor device structure. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 21, 22, 48, 49, 50)
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17. A method for increasing a breakdown voltage of a semiconductor device, comprising:
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providing a substrate of first conductivity type having a device region of second conductivity type therein; forming a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region by forming a ring encircling at least a portion of said semiconductor device, said region of second conductivity having a center located vertically beneath an outermost doped region of second conductivity type of said semiconductor device. - View Dependent Claims (18, 19, 20, 51, 52, 53)
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23. A semiconductor device, comprising:
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a substrate of first conductivity type; a device region in said substrate of second conductivity type; a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region; and a field shaping region of second conductivity type spaced from said device region and spaced from said region of second conductivity, said region of second conductivity having a center located vertically beneath said field shaping region. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30)
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31. A semiconductor device structure for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region, comprising:
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a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region; and a field shaping region of second conductivity type spaced from said device region and spaced from said region of second conductivity, said region of second conductivity having a center located vertically beneath said field shaping region. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38)
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39. A method for increasing a breakdown voltage of a semiconductor device, comprising:
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providing a substrate of first conductivity type having a device region of second conductivity type therein; forming a region of second conductivity type in said substrate completely buried in said substrate at a depth below and separated from said device region; and forming a field shaping region of second conductivity type spaced from said device region and spaced from said region of second conductivity, said region of second conductivity having a center located vertically beneath said field shaping region. - View Dependent Claims (40, 41, 42, 43, 44)
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Specification