Multilevel interconnect structure for integrated circuits

• US 6,011,311 A
• Filed: 04/14/1998
• Issued: 01/04/2000
• Est. Priority Date: 01/07/1998
• Status: Expired due to Term

• Current Assignee: Nanya Technology Corporation
• Original Assignee: Nanya Technology Corporation
• Inventors: Hong, Jen-Der, Hsing, Edward Hsien-Sheng
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Berezny, Neal
• Application Number:
  US09/059,938
• Time in Patent Office: 630 Days
• Field of Search: 257/774, 257/767, 257/758, 257/741, 257/765, 257/763, 257/762
• US Class Current: 257/774
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A multilevel interconnect structure includes a lower conducting layer, a dielectric layer formed on the lower conducting layer, an upper conducting layer formed partly on the dielectric layer, and an I-shaped via plug for electrically connecting the lower conducting layer and the upper conducting layer. The I-shaped via plug has an upper portion which laterally extends into the upper conducting layer, and a lower portion which undercuts the lower conducting layer.

Claims

1. A multilevel interconnect structure for an integrated circuit comprising:

a first conducting layer;

a dielectric layer formed on said first conducting layer;

a second conducting layer formed partly on said dielectric layer; and

an I-shaped via plug for electrically connecting said first conducting layer and said second conducting layer, wherein said I-shaped via plug has an upper portion laterally extending into said second conducting layer and a lower portion undercutting said first conducting layer of said multilevel interconnect structure.

2. The multilevel interconnect structure of claim 1, wherein said first conducting layer is made of metal.

3. The multilevel interconnect structure of claim 2, wherein said metal is selected from the group of aluminum (Al) and aluminum alloy.

4. The multilevel interconnect structure of claim 2, wherein said aluminum alloy is selected from the group of AlSiCu and AlCu.

5. The multilevel interconnect structure of claim 1, wherein said dielectric layer is made of silicon dioxide.

6. The multilevel interconnect structure of claim 1, wherein said second conducting layer is made of metal.

7. The multilevel interconnect structure of claim 6, wherein said metal is selected from the group of aluminum (Al) and aluminum alloy.

8. The multilevel interconnect structure of claim 7, wherein said aluminum alloy is selected from the group of AlSiCu and AlCu.

9. The multilevel interconnect structure of claim 1, wherein said via plug is made of tungsten (W).