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System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor

  • US 6,011,404 A
  • Filed: 07/03/1997
  • Issued: 01/04/2000
  • Est. Priority Date: 07/03/1997
  • Status: Expired due to Term
First Claim
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1. A non-contact method for determining electrical properties of a semiconductor material, comprising the steps of:

  • field inducing a junction in equilibrium inversion in said semiconductor material;

    pulsing said junction out of equilibrium to create a deep depletion region proximate said junction;

    measuring a surface voltage proximate said junction while performing said step of pulsing; and

    determining generation lifetime of said semiconductor material, said generation lifetime being a function of a rate of change of said surface voltage.

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