High sensitivity micro-machined pressure sensors and acoustic transducers

• US 6,012,335 A
• Filed: 09/17/1997
• Issued: 01/11/2000
• Est. Priority Date: 05/02/1996
• Status: Expired due to Term

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Bashir, Rashid, Kabir, Abul
• Primary Examiner(s): FELBER, JOSEPH LEON
• Application Number:
  US08/932,410
• Time in Patent Office: 846 Days
• Field of Search: 73/724, 73/632, 361/283.4, 367/181, 381/174
• US Class Current: 73/724
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81C 1/00158 Diaphragms, membranes manufacture process for semi-permeable inorganic membranes B01D67/0039
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/30608 Anisotropic liquid etching H01L21/3063 takes precedence
• CPC Class Codes: H04R 31/003 for diaphragms or their outer suspension

Abstract

A method of making a pressure sensor or acoustic transducer having high sensitivity and reduced size. A thin sensing diaphragm is produced by growing a single crystal, highly doped silicon layer on a substrate using a chemical vapor deposition process. The diaphragm is incorporated into a pressure sensor or acoustic transducer which detects pressure variations by a change in the capacitance of a capacitor which includes the diaphragm as a movable member. The thin diaphragm produces a highly sensitive device which can be fabricated in a smaller size than sensors or transducers having thicker diaphragms.

Claims

1. An acoustic transducer or pressure sensor, comprising:

a substrate having a top surface and a bottom surface;

a single crystal silicon diaphragm formed on the top surface of the substrate, the diaphragm having a thickness of one micron or less;

an aperture formed in the bottom surface of the substrate and extending to the diaphragm; and

a contact electrically connected to the diaphragm, the contact located on the top surface of the substrate and electrically isolated from the substrate.

2. The acoustic transducer or pressure sensor of claim 1, further comprising:

a layer of polysilicon interposed between the contact and the substrate.

3. The acoustic transducer or pressure sensor of claim 2, further comprising:

a layer of oxide interposed between the polysilicon layer and the substrate.

4. The acoustic transducer or pressure sensor of claim 3, wherein the layer of oxide is substantially thicker than the single crystal silicon diaphragm.

5. The acoustic transducer or pressure sensor of claim 1, wherein the single crystal silicon diaphragm is doped with a dopant.

6. The acoustic transducer or pressure sensor of claim 1, wherein the single crystal silicon diaphragm is a silicon-germanium layer.

7. The acoustic transducer or pressure sensor of claim 1, further comprising:

a perforated electrode above the single crystal silicon diaphragm, the perforated electrode being electrically isolated from the single crystal silicon diaphragm and separated from the single crystal silicon diaphragm by a capacitor gap, thereby forming a two-plate capacitor comprised of the single crystal silicon diaphragm and the perforated electrode.