Electron-emitting device having multi-layer resistor

• US 6,013,986 A
• Filed: 06/30/1997
• Issued: 01/11/2000
• Est. Priority Date: 06/30/1997
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Candescent Technologies Corporation (Canon Inc.)
• Inventors: Knall, N. Johan, Haven, Duane A., Ramani, Swayambu
• Primary Examiner(s): VU, DAVID HUNG
• Application Number:
  US08/884,702
• Time in Patent Office: 925 Days
• Field of Search: 313/495, 313/336, 313/309, 313/351, 315/169.3
• US Class Current: 315/169.3
• CPC Class Codes: H01J 2201/319 Circuit elements associated with the emitters by direct integration
• CPC Class Codes: H01J 2329/00 Electron emission display panels, e.g. field emission display panels
• CPC Class Codes: H01J 3/022 with microengineered cathode, e.g. Spindt-type

Abstract

An electron-emitting device employs a multi-layer resistor (46). A lower layer (48) of the resistor overlies an emitter electrode (42). A set of electron-emissive elements (54) overlie an upper layer (50) of the resistor. Each resistive layer extends continuously from a location below each electron-emissive element to a location below each other electron-emissive element. The two resistive layers are of different chemical composition. The upper resistive layer is typically formed with cermet. The lower resistive layer is typically formed with a silicon-carbon compound.

Claims

1. A device comprising:

an electrically conductive emitter electrode;

a lower electrically resistive layer overlying the emitter electrode;

an upper electrically resistive layer overlying, and of different chemical composition than, the lower resistive layer; and

a set of electron-emissive elements overlying the upper resistive layer, each resistive layer extending continuously from a location below each electron-emissive element to a location below each other electron-emissive element.

2. A device as in claim 1 wherein current-voltage characteristics of a specified one of the resistive layers are closer to linear than current-voltage characteristics of the remaining one of the resistive layers for a resistor voltage across the two layers varying from zero to at least an upper operating value that the resistor voltage can reach during normal operation of the device.

3. A device as in claim 2 wherein the specified resistive layer (a) is of lower resistance than the remaining resistive layer when the resistor voltage is between zero and a crossover value less than the upper operating value and (b) is of higher resistance than the remaining resistive layer when the resistor voltage is between the crossover value and the upper operating value.

4. A device as in claim 2 wherein the remaining resistive layer is of resistance that changes by at least a factor of 10 with the resistor voltage.

5. A device as in claim 2 wherein the specified resistive layer is the lower resistive layer, the remaining resistive layer thereby being the upper resistive layer.

6. A device as in claim 5 wherein the lower resistive layer (a) is of lower resistance than the upper resistive layer when the resistor voltage is between zero and a crossover value less than the upper operating value and (b) is of higher resistance than the upper resistive layer when the resistor voltage is between the crossover value and the upper operating value.

7. A device as in claim 6 wherein the upper resistive layer is of resistance at least 10 times lower when the resistor voltage is at the upper operating value than when the resistor voltage is at a transition value between zero and the crossover value.

8. A device as in claim 6 wherein current-voltage characteristics of the two resistive layers as a combination became progressively more linear as the resistor voltage increases from the transition value through the crossover value to the upper operating value.

9. A device as in claim 6 wherein, when the resistor voltage is between the transition value and the upper operating value, current-voltage characteristics of the two resistive layers as a combination become progressively more linear as the lower resistive layer is made progressively thicker relative to the upper resistive layer.

10. A device as in claim 1 wherein the upper resistive layer comprises cermet in which metal particles are embedded in ceramic.

11. A device as in claim 10 wherein:

the metal particles consist of 10-80% of the cermet by weight; and

the ceramic consists of 20-90% of the cermet by weight.

12. A device as in claim 10 wherein the metal particles comprise chromium particles.

13. A device as in claim 10 wherein the lower resistive layer comprises a silicon-carbon compound.

14. A device as in claim 1 further including a dielectric layer overlying the upper resistive layer and having at least one dielectric opening in which the electron-emissive elements are situated.

15. A device as in claim 14 wherein the dielectric layer is selectively etchable with respect to the upper resistive layer.

16. A device as in claim 14 further including a control electrode overlying the dielectric layer and having at least one control opening that exposes the electron-emissive elements.

17. A device comprising:

a plurality of laterally separated electrically conductive emitter electrodes;

a lower electrically resistive layer overlying the emitter electrodes;

an upper electrically resistive layer overlying, and of different chemical composition than, the lower resistive layer; and

a plurality of laterally separated sets of electron-emissive elements overlying the upper resistive layer, each set containing multiple electron-emissive elements, each resistive layer extending continuously from a location below each electron-emissive element in each set to a location below each other electron-emissive element in that set.

18. A device as in claim 17 further including:

a dielectric layer overlying the upper resistive layer and having dielectric openings in which the electron-emissive elements are situated; and

a plurality of laterally separated control electrodes overlying the dielectric layer and having control openings through which the electron-emissive elements are exposed.

19. A device as in claim 18 wherein the upper resistive layer comprises cermet in which metal particles are embedded in ceramic.

20. A device as in claim 18 further including anode means situated above, and spaced apart from, the electron-emissive elements for collecting electrons emitted by the electron-emissive elements, the anode means being part of a light-emitting device having a like multiplicity of laterally separated light-emissive elements situated respectively opposite the sets of electron-emissive elements for emitting light upon being struck by electrons emitted from the electron-emissive elements.

21. A device comprising:

an electrically conductive emitter electrode;

a lower electrically resistive layer overlying the emitter electrode;

an upper electrically resistive layer overlying, and of different chemical composition than, the lower resistive layer, the upper resistive layer comprising cermet in which metal particles are embedded in ceramic; and

an electron-emissive element overlying the upper resistive layer.

22. A device as in claim 21 wherein:

the metal particles consist of 10-80% of the cermet by weight; and

the ceramic consists of 20-90% of the cermet by weight.

23. A device as in claim 21 wherein the metal particles comprise chromium particles.

24. A device as in claim 21 wherein the lower resistive layer comprises at least one of a silicon-carbon compound, aluminum nitride, gallium nitride, and amorphous silicon.

25. A device as in claim 21 wherein current-voltage characteristics of the lower resistive layer are closer to linear than current-voltage characteristics of the upper resistive layer for a resistor voltage across the two layers varying from zero to at least an upper operating value that the resistor voltage can reach during normal operation of the device.

26. A device as in claim 25 wherein the lower resistive layer (a) is of lower resistance than the upper resistive layer when the resistor voltage is between zero and a crossover value less than the upper operating value and (b) is of higher resistance than the upper resistive layer when the resistor voltage is between the crossover value and the upper operating value.

27. A device as in claim 26 wherein the upper resistive layer is of resistance at least 10 times lower when the resistor voltage is at the upper operating value than when the resistor voltage is at a transition value between zero and the crossover value.

28. A device as in claim 26 wherein current-voltage characteristics of the two resistive layers as a combination became progressively more linear as the resistor voltage increases from the transition value through the crossover value to the upper operating value.

29. A device as in claim 26 wherein, when the resistor voltage is between the transition value and the upper operating value, current-voltage characteristics of the two resistive layers as a combination become progressively more linear as the lower resistive layer is made progressively thicker relative to the upper resistive layer.

30. A device as in claim 21 further including a dielectric layer overlying the upper resistive layer and having a dielectric opening in which the electron-emissive element is situated.

31. A device as in claim 30 wherein the dielectric layer is selectively etchable with respect to the upper resistive layer.

32. A device as in claim 30 further including a control electrode overlying the dielectric layer and having a control opening that exposes the electron-emissive element.