Localizing cleaning plasma for semiconductor processing

• US 6,014,979 A
• Filed: 06/22/1998
• Issued: 01/18/2000
• Est. Priority Date: 06/22/1998
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Van Autryve, Luc, Lang, Stefan Oswald
• Primary Examiner(s): Gulakowski, Randy
• Assistant Examiner(s): CHAUDHRY, SAEED T
• Application Number:
  US09/102,964
• Time in Patent Office: 575 Days
• Field of Search: 134/1.1, 134/1.2, 216/67, 216/71, 438/905
• US Class Current: 134/1.1
• CPC Class Codes: B08B 7/0035 by radiant energy, e.g. UV, laser, light beam or the like
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: Y10S 438/905 Cleaning of reaction chamber

Abstract

A process for etching a substrate 20 in a process chamber 25 having sidewalls 30 and a sacrificial collar 100, and for cleaning the sacrificial collar without eroding or otherwise damaging the sidewalls. The process comprises an etching stage in which a substrate 20 is placed in the process chamber 25, and the sacrificial collar 100 is maintained around the substrate to add or remove species from a process gas to affect a processing rate of the substrate periphery. The process further comprises a localized cleaning stage in which the substrate 20 is removed, a cleaning gas introduced into the process chamber 25, and a localized cleaning plasma sheath 95 is formed to clean process residues formed on the sacrificial collar 100 substantially without extending the localized cleaning plasma sheath 95 to the sidewalls 30 of the process chamber.

Claims

1. A method of processing a substrate in a process chamber, the method comprising the steps of:

(a) in a processing stage, placing the substrate in the process chamber, maintaining a surface of sacrificial material around the substrate, introducing process gas into the process chamber, and energizing the process gas whereby the surface of sacrificial material adds or removes species from the process gas to change a processing rate at the substrate periphery; and

(b) in a cleaning stage, removing the substrate, introducing a cleaning gas into the process chamber, and forming a localized cleaning plasma sheath from the cleaning gas that is localized to the surface of the sacrificial material to remove process residue formed on the surface of the sacrificial material substantially without extending to and eroding sidewalls of the process chamber.

2. The method of claim 1 wherein the step of forming a localized cleaning plasma sheath comprises maintaining a pressure of cleaning gas in the process chamber that is sufficiently high that the localized cleaning plasma sheath is confined to a perimeter of the surface of the sacrificial material.

3. The method of claim 2 comprising the step of maintaining a pressure of cleaning gas of from about 200 to about 700 mTorr.

4. The method of claim 1 wherein the cleaning stage comprises the step of generating a magnetic field in the process chamber that is substantially parallel to the surface of the substrate and rotates about the substrate.

5. The method of claim 4 wherein the magnetic field comprises a field strength of from about 20 to about 500 Gauss.

6. The method of claim 1 further comprising the step of covering at least a portion of a sidewall of the process chamber with a liner, and setting process conditions of the localized cleaning plasma sheath so that the localized cleaning plasma sheath does not contact and erode the liner.

7. The method of claim 1 wherein the cleaning gas comprises an inorganic fluorinated gas selected from the group consisting of NF₃, CF₄, and SF₆.

8. The method of claim 1 wherein the processing stage comprises an etching stage in which process gas comprising halogen-containing gas is introduced into the process chamber, and energized so that the substrate is etched.

9. The method of claim 8 wherein the surface of sacrificial material adds or removes oxygen species from the process gas.

10. The method of claim 1 wherein the processing stage is repeated at least 5 times before a localized cleaning stage is performed.

11. The method of claim 8 further comprising a wet-cleaning stage comprising the steps of opening the process chamber and scrubbing the surface of the internal surfaces with a cleaning liquid, and wherein the process conditions of the localized cleaning plasma sheath are set such that the cleaning stage is repeated a plurality of times before the wet-cleaning stage is performed.

12. A method of etching a substrate in a process chamber, the method comprising the steps of:

(a) in an etching stage, placing the substrate in the process chamber, maintaining a silicon-containing sacrificial collar around the substrate, introducing a halogen-containing process gas into the process chamber, and energizing the process gas whereby the sacrificial collar adds or removes species from the process gas to change a processing rate at the substrate periphery; and

(b) in a cleaning stage, removing the substrate, introducing a cleaning gas into the process chamber, and forming a localized cleaning plasma sheath from the cleaning gas that is localized to the sacrificial collar to remove process residues formed on the sacrificial collar substantially without extending to and eroding sidewalls of the process chamber.

13. The method of claim 12 wherein the step of forming a localized cleaning plasma sheath comprises maintaining a pressure of cleaning gas in the process chamber that is sufficiently high that the localized cleaning plasma sheath is confined to a perimeter of the sacrificial collar.

14. The method of claim 13 comprising the step of maintaining a pressure of cleaning gas of from about 200 to about 700 mTorr.

15. The method of claim 13 wherein the cleaning stage comprises the step of generating a magnetic field in the process chamber that is substantially parallel to a surface of the substrate and rotates about the substrate.

16. The method of claim 15 wherein the magnetic field comprises a field strength of from about 20 to about 100 Gauss.

17. The method of claim 12 further comprising the step of covering at least a portion of a sidewall of the process chamber with a liner, and setting process conditions of the localized cleaning plasma sheath so that the localized cleaning plasma sheath does not contact and erode the liner.

18. The method of claim 12 wherein the cleaning gas comprises an inorganic fluorinated gas selected from the group consisting of NF₃, CF₄, and SF₆.

19. The method of claim 18 wherein the sacrificial collar adds or removes oxygen species from the cleaning gas.

20. The method of claim 18 wherein the sacrificial collar adds or removes fluorine species from the cleaning gas.